17AUG2007 Search Results

Contextual Info: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

4TD245

Abstract: FXL4TD245BQX
Contextual Info: FXL4TD245 tm Low Voltage Dual Supply 4-Bit Signal Translator with Configurable Voltage Supplies and Signal Levels and 3-STATE Outputs and Independent Direction Controls Features General Description • Bi-directional interface between any 2 levels The FXL4TD245 is a configurable 4-bit dual-voltagesupply translator designed for both uni-directional and

10n20c

Abstract: 10n20
Contextual Info: TM FQB10N20C/FQI10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Y2010DN

Abstract: y2010d y2010 diode y2010dn switched mode power supply *2010dn
Contextual Info: FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes TO-220 1 2 3 1. Anode 2.Cathode 3. Anode

6n40c

Abstract: 6N40
Contextual Info: TM FQB6N40C/FQI6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB15P12 / FQI15P12 120V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

32N12

Contextual Info: FQB32N12V2/FQI32N12V2 120V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FFA60UP20DN Features • Ultrafast with soft recovery @ IF = 1A , < 40ns • Reverse Voltage, 200V • Forward Voltage (@ TC = 100°C), < 1V TO-3P Applications • • • • 1 2 3 Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply

"induction cooker" circuit

Abstract: induction cooker application notes FGL60N100BNTD fairchild induction cooker induction cooker circuit with IGBT IGBT FGL60N100BNTD igbt induction cooker induction cooker circuit induction heating cooker induction cooker use on component
Contextual Info: FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

2701 optocoupler

Abstract: optocoupler 2701 FODM2701 FODM121R1 DSA0023712 FODM121BR2
Contextual Info: FODM121 Series, FODM124, FODM2701 Series, FODM2705 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers Features Applications • >5mm creepage/clearance ■ Compact 4-pin surface mount package ■ Digital logic inputs ■ ■ ■ ■ ■ Microprocessor inputs

Contextual Info: IRFW610B / IRFI610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

optocouplers 501 IC

Abstract: TIL113 CNX48U
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. CNX48U H11B1 MOC8080 TIL113 H11B2 H11B255 H11B3 FEATURES • High sensitivity to low input drive current

18N20

Abstract: FQD18N20V2
Contextual Info: TM FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

KA7805ETU

Abstract: KA7805AE KA7809AE KA7805ERTM KA7915E KA7805E
Contextual Info: KA78XXE/KA78XXAE 3-Terminal 1A Positive Voltage Regulator Features Description • Output Current up to 1A The KA78XXE/KA78XXAE series of three-terminal positive regulator are available in the TO-220/D-PAK package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs

Contextual Info: IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

10n20c

Abstract: 10n20
Contextual Info: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Rail-to-Rail Amplifiers

Abstract: FHP3232
Contextual Info: FHP3132, FHP3232 Single and Dual, High-Speed, Rail-to-Rail Amplifiers Features at ±5V Description • 2.5mA supply current per amplifier The FHP3132 single and FHP3232 (dual) are low-cost, high-performance, voltage feedback amplifiers that consume only 2.5mA of supply current per channel, while providing

r18120g2

Abstract: R18120S3 R18120P R18120P2 igbt 6.5 kv snubber R18120G ISL9R18120P2 ISL9R18120S3ST
Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

120N30

Contextual Info: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where

5n50c

Abstract: FQPF*5n50c 5n50
Contextual Info: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

17n40

Abstract: 17N40T 17n4 fqpf
Contextual Info:


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FOD250L

Contextual Info: FOD050L, FOD250L: Single Channel FOD053L: Dual Channel LVTTL/LVCMOS 3.3V High Speed Transistor Optocouplers Features Description • Low power consumption The FOD250L, FOD050L and FOD053L optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor. These devices are specified for operation at a 3.3V supply voltage.

plasma tv schematic diagram

Abstract: FOD3181 FOD3180 sustain driver for plasma tv
Contextual Info: FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Features Description • Guaranteed operating temperature range of -20°C to The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide AlGaAs light emitting diode

R3305 transistor

Abstract: R3305 NPN transistor Electronic ballast to92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR FJN3303
Contextual Info: FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted