IRFW610BTM Search Results
IRFW610BTM Datasheets (2)
Fairchild Semiconductor
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFW610BTM |
|
200V N-Channel B-FET / Substitute of IRFW610A | Original | 673.61KB | 9 | ||
| IRFW610BTM_FP001 |
|
200V N-Channel B-FET / Substitute of IRFW610A | Original | 673.61KB | 9 |
IRFW610BTM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: IRFW610B / IRFI610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to |
Original |
IRFW610B IRFI610B W610B O-263 IRFW610BTM FP001 |