16WORD Search Results

42-PIN

Abstract: 44-PIN 48-PIN DIP42-P-600-2 MSM531652F
Contextual Info: O K I Semiconductor MSM531652F_ 1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM 16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM • DESCRIPTION The OKI M SM531652F is a 1,048,576-words x 16-bit or 2,097,152-bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 16 words x 16bit or 32bytes x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The

74F189

Abstract: 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 N16E
Contextual Info: Revised January 1999 74F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are 3STATE and are in the high impedance state whenever the

74ls189 ram

Abstract: 74LS189 74LS189 logic diagram 74LS189DC 74LS189PC 74LS189FC 74S189DC 54LS189DM 54S189DM 74S189FC
Contextual Info: 189 CONNECTION DIAGRAM PINOUT A ¡4S/74S189 ►54LS/74LS189 b n 7 S 0 ao [T ï i ] Vcc 64-BIT RANDOM ACCESS MEMORY C sU m a. With 3-State Outputs we |T T7| A2 Di [7 Ö1 [ ? j l ] A3 02 ï D ESC R IPTIO N — The '189 is a high speed 64-bit RAM organized as a 16word by 4 -b it array. Address inputs are buttered to m inimize loading and are

Contextual Info: 00 <0 CT1 National J&fl Semiconductor 54F/74F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are TRI­

MR533252J

Abstract: MR533252J-XXMA MR533252J-XXTP
Contextual Info: This version: Feb. 1999 Previous version: - Semiconductor MR533252J Preliminary 2,097,152-Word X 16-Bit or 4,194,304-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM DESCRIPTION The MR533252J is a 32Mbit Read-Only Memory whose configuration can be electrically switched

MR53V1652J

Abstract: DIP42-P-600-2 MR53V1652J-XXMA MR53V1652J-XXRA MR53V1652J-XXTP d4146
Contextual Info: This version: Feb. 1999 Previous version: - Semiconductor MR53V1652J Preliminary 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM DESCRIPTION The MR53V1652J is a 16Mbit Read-Only Memory whose configuration can be electrically switched

MSM531655E

Abstract: TSOP 66 Package TSOP70-P-400
Contextual Info: Semiconductor MSM531655E 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM DESCRIPTION The OKI MSM531655E is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 8 double

MSM531652F

Abstract: 42-PIN 44-PIN 48-PIN DIP42-P-600-2
Contextual Info: Semiconductor MSM531652F 1,048,576-Words x 16-bit or 2,097,152-Bytes x 8-bit MaskROM 16Words x 16-Bit or 32Bytes x 8-Bit/Page Mode MASKROM DESCRIPTION The OKI MSM531652F is a 1,048,576-words x 16-bit or 2,097,152-bytes x 8-bit CMOS Mask ROM with an asynchronous page read mode. Each page is organized 16 words x 16bit or 32bytes x 8-bit. It operates on a single 5.0V power supply and is TTL compatible. The

74F189

Abstract: 74F219 74F219PC 74F219SC 74F219SJ M16B M16D MS-001 MS-013 N16E
Contextual Info: Revised September 2000 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The 74F219 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs

DIP40

Abstract: MSM534052E TSOP44
Contextual Info: ¡ 電子デバイス MSM534052E 262,144-Wordx16-Bit or 524,288-Word×8-Bit 8Word×16-Bit or 16Word×8-Bit/Page Mode MASKROM n 概要 MSM534052Eは262,144ワード×16ビット構成と524,288ワード×8ビット構成が切替可能で、か つページ当り8ワード×16ビット又は16ワード×8ビットの高速ページモード読み込みが可能な

Contextual Info: al Semiconductor August 1995 5 4 F /7 4 F 1 8 9 6 4 -B it R a n d o m A c c e s s M e m o ry w ith T R I-S T A T E O u tp u ts General Description Features The ’F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize

74F189

Abstract: 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 MS-013 N16E
Contextual Info: Revised September 2000 74F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs

74F189

Abstract: 16-WORD 74F189PC F189 MS-001 N16E
Contextual Info: Revised January 2004 74F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs

Contextual Info: TC74HC40105AP/AF PRELIMINARY X 16 Word R E G I S T E R The TC74HC40105A is a high speed CMOS 4bit x 16word firs t-in , first-o u t FIFO Strage R egister fabricated with silicon gate C2MOS technolgy. It achieves the high speed operation while m aintaining

74F219

Abstract: 74F189 74F219PC 74F219SC M16B MS-001 MS-013 N16E
Contextual Info: Revised January 2004 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The 74F219 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs

SEIKO

Contextual Info: Rev.1.1 S-24 Series SERIAL NON-VOLATILE RAM The S-24 Series is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable and programmable 2 memory E PROM to backup the SRAM. The organization is 16wordx16-bit (total 256 bits) for the S-24H45 and the S-24S45, and 8word×8-bit (total 64 bits) for the S-24H30 and the S-24S30.

MSM531655E

Abstract: TSOP70-P-400 T8D20 065K
Contextual Info: O K I Semiconductor MSM531655E_ 524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM • DESCRIPTION The OKI MSM531655E is a 524,288-double words x 32-bit or 1,048,576-words x 16-bit

Contextual Info: 289 CONNECTION DIAGRAM PINOUT A 54S/74S289 b i 1 5 4 L S /7 4 L S 2 8 9 C u <7 ao[T T i l vcc 64-BIT RANDOM ACCESS MEMORY «D E Tsl Ai With O pen-Collector Outputs WE [ T 14] A 2 Di [7 13] A 3 0 ,[T T2ID 4 D2 [ ? T T lo a Ö2 U Tö] D 3 D ESC R IPTIO N — The '289 is a high speed 64-bit RAM organized as a 16word by 4-b it array. Address inputs are buffered to minim ize loading, and

Contextual Info: 54F189,74F189 54F189 74F189 64-Bit Random Access Memory with TRI-STATE Outputs Literature Number: SNOS166A 54F 74F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array Address inputs are buffered to minimize

Contextual Info: This version: Feb. 1999 Previous version: - 電子デバイス MR533252J 暫定 2,097,152-Word X 16-Bit or 4,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM • 概要 MR533252J は 2,097,152 ワードx16 ビット構成と 4,194,304 ワード×8 ビット構成が切替可能

D16D3

Contextual Info: ¡ 電子デバイス MSM531655E 524,288-Double Wordx32-Bit or 1,048,576-Word×16-Bit 8Double Word×32-Bit or 16Word×16-Bit/Page Mode MASKROM n 概要 MSM531655Eは524,288ダブルワード×32ビット構成と1,048,576ワード×16ビット構成が切替可

Contextual Info: 0> co 9 National Semiconductor 54F/74F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are TRI­

DIP42-P-600-2

Abstract: MR53V1652J MR53V1652J-XXMA MR53V1652J-XXRA MR53V1652J-XXTP
Contextual Info: This version: Feb. 1999 Previous version: - 電子デバイス MR53V1652J 暫定 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM • 概要 MR53V1652J は 1,048,576 ワードx16 ビット構成と 2,097,152 ワード×8 ビット構成が切替可能

54F189DL

Abstract: 54F189FL 54F189LL 74F189 74F189PC 74F189SC 74F189SJ F189 J16A N16E
Contextual Info: 54F 74F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are TRISTATE and are in the high impedance state whenever the