F189 Search Results

74F189

Abstract: 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 N16E
Contextual Info: Revised January 1999 F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are 3STATE and are in the high impedance state whenever the

Contextual Info: 00 <0 CT1 National J&fl Semiconductor 54F/F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are TRI­

Contextual Info: F1891RD600 Diodes Center-Tapped Schottky Doubler I O Max.(A) Output Current90 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0k V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

54F189

Abstract: 54F189DC F189
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 07/15/98 Last Update Date: 08/24/98 Last Major Revision Date: 07/15/98 F189-X REV 0A0 64-BIT RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS General Description The F189 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs

Contextual Info: F1892CCD600 Diodes Common Cathode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current90 V(RRM) (V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

Contextual Info: F1891CAD1400 Diodes Common Anode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current90 V(RRM) (V) Rep.Pk.Rev. Voltage1.4k t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

74F189

Abstract: 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 MS-013 N16E
Contextual Info: Revised September 2000 F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs

74F189

Abstract: 16-WORD 74F189PC F189 MS-001 N16E
Contextual Info: Revised January 2004 F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs

application of scr 1000 amps with circuit diagram

Abstract: scr 1400 vac 25 amp E72445 K1 Series 480 400 F1806 scr 100a
Contextual Info: Series F18 25-90 Amp • SCR/DIODE Modules • Industry Standard Package and Circuits • Power Control Building Blocks PART NUMBER IDENTIFICATION Series Type Current F18-Case style 27 - 25 Amps 42 - 40 Amps 57 - 55 Amps 92 - 90 Amps Example: F18925D1200 Circuit Type

Contextual Info: F1892CAD1400 Diodes Common Anode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current90 V(RRM) (V) Rep.Pk.Rev. Voltage1.4k t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

Contextual Info: F1891CCD1400 Diodes Common Cathode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current90 V(RRM) (V) Rep.Pk.Rev. Voltage1.4k t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

f1892sd120

Contextual Info: Series F18 25-105Amp • SCR/DIODE Modules • Industry Standard Package and Circuits • Power Control Building Blocks PART NUMBER IDENTIFICATION Series Type F18-Case style Example: F1892SD1200 Current 27 - 25 Amps 42 - 40 Amps 57 - 55 Amps 92 - 90 Amps 107 - 105 Amps

E72445

Abstract: F1892SD1200
Contextual Info: Series F18 25-105Amp • SCR/DIODE Modules • Industry Standard Package and Circuits • Power Control Building Blocks PART NUMBER IDENTIFICATION Series Type F18 -Case style Example: F1892SD1200 Current 27 - 25 Amps 42 - 40 Amps 57 - 55 Amps 92 - 90 Amps

Contextual Info: F1891CCH1400 Thyristors Center-Tapped CC Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)90 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)2.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

application of scr 1000 amps with circuit diagram

Abstract: schematic transistor modul trigger ssr schematic circuit marking 2U diode scr 1000 amps marking 2u K1 Series DI 380 Transistor K1 Series 480 400 sdk 25/0
Contextual Info: Series F18 25-105Amp • SCR/DIODE Modules • Industry Standard Package and Circuits • Power Control Building Blocks PART NUMBER IDENTIFICATION Series Type F18 -Case style Example: F1892SD1200 Current 27 - 25 Amps 42 - 40 Amps 57 - 55 Amps 92 - 90 Amps

Contextual Info: F1891DH600 Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)600 I(T) Rated Maximum (A)90 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)2.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

Contextual Info: National Semiconductor 54F/F189 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are TRI­

74F189

Abstract: 74F189PC 74F189SC 74F189SJ F189 M16B M16D MS-001 MS-013 N16E
Contextual Info: Revised July 1999 F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs

Contextual Info: F1892CCD1400 Diodes Common Cathode Diode Array Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current90 V(RRM) (V) Rep.Pk.Rev. Voltage1.4k t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

Contextual Info: F1892CCH1400 Thyristors Center-Tapped CC Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)90 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)2.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

Contextual Info: F1891DH1400 Thyristors Half-Controlled Negative Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)90 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)2.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

Contextual Info: F1891CAH1400 Thyristors Center-Tapped CA Thyristor Doubler V DRM Max. (V) V(RRM) Max. (V)1.4k I(T) Rated Maximum (A)90 @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)2.0k¥ @ t(w) (s) (Test Condition) I(GT) Max. (A)150m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current300m

Contextual Info: A I R C H April 1988 I L D Revised January 1999 S E M [ C O N D U C T O R TM F189 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The F189 is a high-speed 64-bit RAM organized as a 16word by 4-bit array. Address inputs are buffered to minimize

Contextual Info: Nationa l Semiconductor MILITARY DATA SHEET Original Creation Date: 05/17/96 Last Update Date: 07/30/96 Last Major Revision Date: 05/17/96 F189-X REV 1A0 64-BIT RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS General Description The F189 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs