16MB Search Results

AxC11

Contextual Info: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.

IS42VS16100E

Abstract: 42VS16100E IS42VS16100E-75BLI
Contextual Info: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11

16mb HIGH-SPEED ASYNCHRONOUS SRAM

Abstract: IBM041816CHLBC IBM043616CHLBC SA37T
Contextual Info: . IBM043616CHLBC IBM041816CHLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation

SA37T

Abstract: cq 721 IBM041816CBLBC IBM043616CBLBC
Contextual Info: . IBM043616CBLBC IBM041816CBLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation

SCANBE

Abstract: SCANBE ejector scanbe handle SCANBE connector mk48t59 MVME2304-0133 MVME2300 PMCSPAN-002 VME COnnector MPC604
Contextual Info: MVME2300 TM VME Processor Modules ♦ PowerPC 603 or PowerPC 604™ 32-bit microprocessor ♦ L1 cache–16KB/16KB PowerPC 603 or 32KB/32KB PowerPC 604 ♦ 16MB to 128MB of on-board ECC DRAM ♦ Up to 1MB socketed Flash for on-board firmware or user-specified requirements

DELL inspiron power supply diagram

Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
Contextual Info: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for

Contextual Info: S IE M E N S HYB39S16160CT-6/-7 16MBit Synchronous DRAM 1M x 16 M Bit S yn ch ro n o u s DRAM fo r High S peed G raph ics A p p lication s • High Performance: full page optional around for sequencial wrap -6 -7 Units fCKm ax @ CL=3 166 143 MHz tCK3 6 7

MSC23832D

Abstract: MSC23832D-60BS16
Contextual Info: This version: Mar. 8. 1999 Semiconductor MSC23832D-xxBS16/DS16 8,388,608-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23832D-xxBS16/DS16 is a fully decoded, 8,388,608-word x 32-bit CMOS dynamic random access memory module composed of sixteen 16Mb DRAMs 4Mx4 in SOJ packages mounted with sixteen decoupling

TC17xx

Abstract: PQFP80 TC17X M58BW M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH
Contextual Info: M58BW NOR Flash memories Automotive Flash memory solutions with burst mode Designed for automotive applications, STMicroelectronics’ M58BW016 16Mb and M58BW032 (32Mb) Flash memories, are built on proven 0.13µm technology. Featuring a wide operating-temperature range,

MR27V1652D

Abstract: DIP42-P-600-2 MR27V1652DMA MR27V1652DRA
Contextual Info: ¡ Semiconductor 1A MR27V1652D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V1652D is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8

MSM27V1655CZ

Contextual Info: ¡ Semiconductor 1A MSM27V1655CZ 524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM DESCRIPTION The MSM27V1655CZ is a 16Mbit electrically Programmable Read-Only Memory with page mode. Its

MSC23436C

Contextual Info: This version: Apr. 7. 1999 Semiconductor MSC23436C-xxBS10/DS10 4,194,304-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23436C-xxBS10/DS10 is a 4,194,304-word x 36-bit CMOS dynamic random access memory module which is composed of eight 16Mb 4Mx4 DRAMs in SOJ packages and two 8Mb(4Mx2) DRAMs in SOJ packages

MSC2323258D

Contextual Info: This version: Mar. 3. 1999 Semiconductor MSC2323258D-xxBS4/DS4 2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSC2323258D-xxBS4/DS4 is a fully decoded, 2,097,152-word x 32-bit CMOS dynamic random access memory module composed of four 16Mb DRAMs in SOJ packages mounted with eight decoupling capacitors on a

LHF00L31

Contextual Info: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LHF00L31 Flash Memory 16Mbit 1Mbitx16 (Model Number: LHF00L31) Spec. Issue Date: May 25, 2004 Spec No: FM045026 LHF00L31 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Preliminary Data Sheet February 29, 2008 INTRODUCTION The UT9Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs

Contextual Info: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in

Contextual Info: IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A APPLICATION SPEC # 29L0000.E36980 Engineering Change Number 13 ROW /1 1 COL / 2 BS 16Mb x 4 I/O x 4 Bank 13 ROW /1 0 COL / 2 BS (8Mb x 8 I/O x 4 Bank) Date E36980 13 ROW / 9 COL / 2 BS (4Mb x 16 I/O x 4 Bank)

IS42S16100F

Contextual Info: IS42S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM FEATURES • Clock frequency: IS42S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

DIP42-P-600-2

Abstract: MR27V1602D
Contextual Info: O K I Semiconductor MR27V1602D_ Preliminary 1A 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM_ DESCRIPTION The MR27V1602D is a 16Mbit electrically Program mable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27

MSC23436D

Contextual Info: This version: Mar. 8.1999 O K I Semiconductor MSC23436D-xxBS10/DS10 4,194,304-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The MSC23436D-xxBS10/DS10 is a fully decoded, 4,194,304-word x 36-bit CMOS dynamic random access memory module composed of eight 16Mb DRAMs 4Mx4 in SOJ packages and two 8Mb DRAMs (4Mx2) in SOJ

sm 0038 tsop

Abstract: E-8BS16
Contextual Info: MSC23S4641 E-8BS16 98.06.22 O K I Semiconductor M S C 2 3 S 4 6 4 1 E -8 B S 1 6 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4641 E-8BS16 is a fully decoded, 4,194,304 x 64bit synchronous dynam ic random access memory com posed of sixteen 16Mb DRAMs(2Mx8) in TSOP

1MX16

Abstract: CCIR601 CCIR656 PBGA388
Contextual Info: STPC CONSUMER-S PC Compatible Embeded Microprocessor • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ POWERFUL x86 PROCESSOR 64-BIT 66MHz SDRAM UMA CONTROLLER -SUPPORTS 16Mbit SDRAMs 4MX4, 2MX8, 1MX16 . VGA & SVGA CRT CONTROLLER 2D GRAPHICS ENGINE