166MH Search Results

AS5SP512K36DQ

Contextual Info: SSRAM A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A AS5SP512K36DQ Plastic Encapsulated Microcircuit Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns 81 84 82 83 85 87 86 89 88

SM2603

Contextual Info: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz

H9ccnnn

Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
Contextual Info: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz

NJU6396

Abstract: NJU6396C-D
Contextual Info: NJU6396 166MHz 水晶発振用 IC •概 要 NJU6396 は166MHz 発振可能な低電圧動作の水晶発振用 C-MOS IC で、発振用アンプ及びトライステートバッファで構 成されます。 動作周波数は 135~166MHz の範囲で発振が可能です。

slot AGP 124 pin

Abstract: SiS chipset W83194BR-640
Contextual Info: W83194BR-640 166MHZ CLOCK FOR SIS CHIPSET W83194BR-640 Data Sheet Revision History Pages Dates Version Version Main Contents On Web 1 n.a. 2 n.a. 02/Apr 1.0 n.a. All of the versions before 0.50 are for internal use. 1.0 Change version and version on web site to 1.0

Contextual Info: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0

MG802C256Q

Abstract: DS06 MOSYS QFP-1420 MG802C256
Contextual Info: MG802C256 Ultra Low Latency, High Performance MOSYS 256Kx32 SGRAM Preliminary Information Features • • • • • • • • • • • • • • • SGRAM protocol High bandwidth 100MHz-166MHz operation Reduced Latency Improved critical timing parameter limits

IDT70V3399

Contextual Info: HIGH-SPEED 3.3V 256/128K x 18 IDT70V3319/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Š Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz) (max.)

attansic f1

Abstract: RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

ST DB3 C702

Abstract: SIS 648 Z1212 SiS648 QT1608RL600 755SA1 z1175 Z1155 ATC93LC46 st DB3 c130
Contextual Info: 5 4 3 2 CPU 755SA5 BLOCK DIAGRAM +3V Pentium 4 Socket 478 CPUCLK CPUCLK# 100/133/200MHZ 1 EC THERMAL Vcore ADM1032 Page 3 Page 3 HOST BUS D 100/133/166MHZ 755SA1 P/N: DDRCLK0 DDRCLK1 DDRCLK2 DDRCLK0# DDRCLK1# DDRCLK2# DDR 2 +2.5V DDRCLK0 DDRCLK1 DDRCLK2 DDR RAM BUS

Attansic L1

Abstract: pr6239 RC415M RC415ME ICS951463AGLFT ASUS attansic f1 RTS5117 C3902 ICS951463
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

963L-2

Abstract: 760GX quanta SiS302ELV LM393 VDD63 nec pc123 quanta BL RTM360 MCL F 108 T4-1
Contextual Info: 1 2 3 KH2 MLB 4 5 6 7 8 01 CPU Thermal AMD Athlon 64 Block Diagram Thermal sensor & Fan SMT uPGA754 A A 1.6G MB/s DDR 2700MB/s 166MHz Memory CRT CRT DDC2B 1x D-SUB 15-Pin NB Local Frame Buffer SISM760 DDR 2700MB/s (166MHz) LVDS Transmitter VB 12bit LCD LVDS

ics 954206

Abstract: SW-DIP2 W83L950 D110-P TP95 Socket AM2 MD414 micro-star RTL8101L
Contextual Info: 5 4 3 MS1012-ALVISO BLOCK DIAGRAM 2 1 Dothan/Yonah SOCKET 479 478 uFCPGA PAGE 3,4,5 D D HOST BUS 100/133MHZ SYS POWER 4X LCD DISPLAY PAGE 19 Channel A NORTH BRIDGE CRT DISPLAY PAGE 19 100/133/166MHZ DDR DRAM PAGE 15,17 INTEL 915GM CHARGER page 32 PAGE 6,7,8,9,10

transformer EC28

Abstract: diagram HANNSTAR k mv diagram HANNSTAR k mv 4 RTM865T-300 80.107 diagram HANNSTAR j mv 4 WISTRON cb1410q hannstar ati GPU board
Contextual Info: A B C D Garda-5 Block Diagram Mobile CPU CLK GEN. 4 ICS951413 RTM865T-300/CY28RS400 PCB STACKUP TOP 133/166MHz INPUTS OUTPUTS 5V_S5 DCBATOUT 3D3V_S5 4 TPS51124RGER 42 INPUTS OUTPUTS DCBATOUT 1D8V_S3 1D2V_S0 APL5312 120mA S TVOUT 14 ATI RC410ME 41 TPS51120

M7602

Abstract: VDDIO10 RTM360-755R 963L-2 M760LV rtm360 MAX1632AEAI nec pc123 quanta quanta computer
Contextual Info: 1 2 3 KH1 MLB 4 5 6 7 8 01 CPU Thermal AMD Athlon 64 Block Diagram Thermal sensor & Fan SMT uPGA754 A A 1.6G MB/s DDR 2700MB/s 166MHz Memory CRT CRT DDC2B 1x D-SUB 15-Pin NB Local Frame Buffer SISM760 DDR 2700MB/s (166MHz) LVDS Transmitter VB 12bit LCD LVDS

max8774

Abstract: AMD Athlon 64 X2 4800 pin diagram IT8512 rtl8101e sd diode mx c425 LP655 C5149 8512E rs690mc TMDTL50HAX4CT
Contextual Info: 5 4 3 2 1 ES23 BLOCK DIAGRAM AMD S1 HOST 133/166MHz PCIE 100MHz VGA 96MHz USB 48MHz REF 14MHz D DDRII-SODIMM1 533/ 667 MHZ DDR II 1 Sempron Rev.F2 Single-Core 1.6G Single-Core 25W Normal, up to 35W 638 S1g1 socket DDRII-SODIMM2 CPU VR CLOCK GENERATOR ICS951462

ics 954206ag

Abstract: 3.5 DC Jack IPC220CZ6 c1384 RTL8101L PQ25A c1384 031 U1020 AC446 4021N
Contextual Info: 5 4 3 MS1012-ALVISO BLOCK DIAGRAM 2 1 Dothan/Yonah SOCKET 479 478 uFCPGA PAGE 3,4,5 D D HOST BUS 100/133MHZ SYS POWER 4X LCD DISPLAY PAGE 19 Channel A NORTH BRIDGE CRT DISPLAY PAGE 19 100/133/166MHZ DDR DRAM PAGE 15,17 INTEL 915GM PAGE 6,7,8,9,10 DDR DRAM

MA1022

Contextual Info: October 2003 AS7C331MPFS18A 1M x 18 pipelined burst synchronous SRAM Features • Organization: 1,048,576 x18 bits • Fast clock speeds to 166MHz in LVTTL/LVCMOS • Fast clock to data access: 3.4/3.8 ns • Fast OE access time: 3.4/3.8 ns • Fully synchronous register-to-register operation

Contextual Info: White Electronic W3EG72125S-D3 -JD3 -AJD3 PRELIMINARY* 1GB – 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL FEATURES DESCRIPTION „ Double-data-rate architecture „ Clock Speeds of 100MHz, 133MHz and 166MHz „ Bi-directional data strobes DQS „ Differential clock inputs (CK & CK#)

Contextual Info: March 2004 AS7C331MPFS18A 1M x 18 pipelined burst synchronous SRAM Features • • • • • • • • • Organization: 1,048,576 x18 bits Fast clock speeds to 166MHz in LVTTL/LVCMOS Fast clock to data access: 3.4/3.8 ns Fast OE access time: 3.4/3.8 ns

70T3539M

Contextual Info: HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz)(max.)

Contextual Info: HIGH-SPEED 3.3V 256/128K x 18 IDT70V3319/99S SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz) (max.)

SIS-630S

Contextual Info: C9631 ® Low EMI 166MHz Clock Generator for SiS630S/Pentium III/Celeron Chipsets Advanced Information IMI Confidential Product Features • • • • • • • • • • • • • • • 166MHz Clock Support ® Supports Pentium III and Celeron CPU’s

Contextual Info: Š HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS IDT70V3599/89S DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 3.6ns 166MHz /4.2ns (133MHz) (max.)