1638 Search Results

27256ad

Contextual Info: TO SHIBA TM 1638V CMOS 4-BIT MICROCONTROLLER 1638VN The 1638V is the OTP microcontroller with 128kbits PROM. For program operation, the programming is achieved by using with EPROM programmer TMM27256AD type and adaptor socket. The function of this device is exactly same as the 47C1238A/1638A.

Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

d8227

Abstract: 16384
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. HIGH-SPEED EPI-CMOS 16384 X 9-BIT PARALLEL FIFO SPACE PRODUCTS 7206ERP W 1 28 VCC D8 2 27 D4 D3 3 26 D5 D2 4 25 D6 D1 5 24 D7 D0 6 23 FL/RT XI 7 22 RS FF 8 21 EF Q0 9 20 XO/HF Q1 10 19 Q7 Q2 11 18 Q6 Q3 12 17 Q5 Q8 13 16

16KX8

Abstract: X76F128 X76F
Contextual Info: X76F128 128K 16Kx8+64x8 Secure FEATURES DESCRIPTION • 64-bit Password Security —Five 64-bit Passwords for Read, Program and Reset • 16384 Byte+64 Byte Password Protected Arrays —Seperate Read Passwords —Seperate Write Passwords —Reset Password

93LC86X

Abstract: 100PF AM93LC86
Contextual Info: AM93LC86 16384-bits Serial Electrically Erasable PROM General Description Features • State-of-the-art architecture - Non-volatile data storage - Standard voltage and low voltage operation Vcc: 2.7V ~ 5.5V - Full TTL compatible inputs and outputs - Auto increment read for efficient data dump

W24129AK-12

Abstract: W24129AK-15 W24129A W24129A-12 W24129A-15 W24129AJ-12 W24129AJ-15
Contextual Info: W24129A 16K x 8 HIGH-SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24129A is a high-speed, low-power CMOS static RAM organized as 16384 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

Contextual Info: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FH46ANG 2010 TOSHIBA CORPORATION All Rights Reserved TMP86FH46ANG Difference among product TMP86xx46 Series 86C846 86CH46 86CM46 86CH46A 86CM46A 86PM46 86PH46 ROM 8192bytes (MASK) 16384bytes (MASK) 32768bytes

DS2505

Abstract: 007H DS2505P DS2505T DS2505V 2n7000 equivalent
Contextual Info: DS2505 DS2505 16K bit Add–Only Memory FEATURES • 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

SN74V273

Abstract: SN74V273-EP SN74V273PZAEP SN74V283 SN74V283-EP SN74V293 SN74V293-EP SN74V263 SN74V263-EP SN74V263PZAEP
Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695 – JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

DS2012

Abstract: DS2212 OC310
Contextual Info: DALLAS SEMICONDUCTOR CORP 3SE D abmi30 Q0D32S7 fi IDAL DS2212 • PRELIMINARY "T-4fc>‘3S DS2212 FIFO Stik DALLAS SEMICONDUCTOR FEATURES PIN CONNECTIONS • Flrst-in, flrst-out memory-based architec­ ture o =1 • Flexible 16384 x 9 organization Z~3 a CZ3

M5M5118P-15

Abstract: M5M5118P 16384-BIT M5M51 si1515 M5M5118
Contextual Info: M ITSUBISHI L S Is M5M5118P, -15 16384-BIT 2048-W O R D B Y 8-BIT C M O S STATIC RAM D ESCRIPTION The M5M 5118P series of 2048-word by 8-bit asynchronous PIN C O NFIG URATIO N (TOP V IEW ) silicon gate C M O S static R A M operates on a single 5V power supply and is designed for easy use in applications

128X128

Abstract: HN25168S HN25169S
Contextual Info: HN25168S, HN25169S —Preliminary— 2048-word x 8-bit Programmable Read Only Memories The H IT A C H I H N 25168S and H N 25169S are high speed electrically programmable, fu lly decoded T T L B ipolar 16384 b it read on ly memories organized as 2048 words by 8 bits w ith on-chip address

Contextual Info: HN25168S, HN25169S -Prelim inary- 2048-word x 8-bit Programmable Read Only Memories The HITACHI HN25168S and HN25169S are high speed electrically programmable, fu lly decoded T TL Bipolar 16384 b it read only memories organized as 2048 words by 8 bits w ith on-chip address

Contextual Info: HM101494 Series-16384-Words x 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101494 is ECL 100K compatible, 16384-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

Contextual Info: Frequency Mixer MCA-3851FH+ Typical Performance Curves Conversion Loss @ IF=400MHz 16.0 LO = +14dBm Conversion Loss dB 14.8 LO = +17dBm 13.6 LO = +20dBm 12.4 11.2 10.0 8.8 7.6 6.4 5.2 4.0 510 886 1262 1638 2014 2390 2766 3142 3518 3894 4270 RF Frequency (MHz)

HM6788HAP-15

Abstract: HM6788HAP-12 HM6788HA
Contextual Info: HM6788HA Series 16384-word x 4-bit High Speed Hi-BiCMOS Static RAM Features • 16384-word × 4 bit organization • 1.3 µm Hi-BiCMOS process • Super fast Access time: 12/15 ns max • Low power dissipation (DC) operating: 300 mW (typ) • +5 V single supply

K4C560838C-TCB

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

iButton Chips

Abstract: DS9092 DS1995 DS1996 DS9093F DS9093RA DS9101 UL913
Contextual Info: DS1995 DS1995 16Kbit Memory iButtonTM F5 MICROCANTM SPECIAL FEATURES • 16384 bits of read/write nonvolatile memory • 256–bit scratchpad ensures integrity of data transfer • Overdrive mode boosts communication to 142k bits 5.89 0.36 0.51 per second

HM-65262C-5

Abstract: 65262 HM65262 HM-65262 HM-65262C-9
Contextual Info: HM65262 16K x 1 Very Low Power CMOS SRAM Introduction The HM 65262 is a very low power CMOS static RAM organized as 16384 x 1 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM 65262 are TTL compatible and operate from single 5V supply thus

Contextual Info: HM 65788 MATRA MHS 16 K x 4 High Speed CMOS SRAM Introduction The HM 65788 is a high speed CMOS static RAM organized as 16384 × 4 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip

MMCP-672061FV-15

Abstract: MMCP-672061FV-15-E MMCP-672061FV-30 SMCP-672061FV-15SB SMCP-672061FV-30SB M672061F
Contextual Info: Features • • • • • • • • • • • • • • First-in first-out dual port memory 16384 x 9 organisation Fast Flag and access times: 15, 30 ns Wide temperature range: - 55 °C to + 125 °C Programmable Half Full Flag Fully expandable by word width or depth