65262 Search Results

HM-65262C-5

Abstract: 65262 HM65262 HM-65262 HM-65262C-9
Contextual Info: 65262 16K x 1 Very Low Power CMOS SRAM Introduction The HM 65262 is a very low power CMOS static RAM organized as 16384 x 1 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM 65262 are TTL compatible and operate from single 5V supply thus

26256

Abstract: smd transistor A13 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
Contextual Info: HM-65262 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced

Contextual Info: HM-65262 Semiconductor 16K x 1 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/85ns Max • Low Standby Current. 50^A Max • Low Operating C u rren t. 50mA Max

HM-65262

Contextual Info: HM-65262/883 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris

ta 6203

Abstract: 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9 HM-65262
Contextual Info: HM-65262 S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced

HM165262C-9

Abstract: EG S5N A9 transistor SMD transistor smd hq
Contextual Info: Π\ H A R R HM-65262 I S S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts 20 LEAD DIP TOP VIEW Fast Access T im e .7Q/85nsMax

hm 6203

Abstract: 841320 J20.C Package rm 6203
Contextual Info: HM-65262 HARRIS S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/85ns Max • Low Standby Current. 50|.iA Max

Contextual Info: M M a rc h l 1994 HM 65262 DATA SHEET 16 K x 1 VERY LOW POWER CMOS SRAM FEATURES . . . ACCESS TIME COMMERCIAL : 70 ns max MILITARY/INDUSTRIAL : 70/85 ns (max) VERY LOW POWER CONSUMPTION ACTIVE: 110 mW(typ) STANDBY : 2.0 pW (typ) DATA RETENTION : 0.8 pW (typ)

HM1-65262-9

Contextual Info: HARRIS S E M ICON SECTOR f Ì> H U U S E M I C O N D U C T O R A R R MbE D • M3G2271 DD3Tlb7 5 * H A S HM-65262 I S 2 3 - 0 5 1 6 K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Features Fast A ccess T im e . . 70/85nsM ax

Contextual Info: HM-65262 HARRIS a S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM August 1996 Description Features • Fast Access T im e. 70/85nsM ax • Low Standby C urrent. 50|xA Max

Contextual Info: S h K S S « HM-65262/883 16K x 1 Asynchronous CM O S Static RAM August 1996 Features • Description T h is Circuit is P ro cessed in A cco rd a n ce to MIL-STD883 and is Fully Conform ant Under the P rovision s of Paragraph 1.2.1. • Fast A c c e s s T im e . 70/85nsMax

Contextual Info: HM-65262/883 S 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­

HM-65262C-5

Abstract: c9285
Contextual Info: 4RE » • SôtôMSb DDG1307 SSI ■ H M H S _ _ Ììllll I r T H I MATRA M H S September 1990 "T = - 4 { û - 2 J ï r - C Ô HM 65262 DATASHEET 16 k X 1 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max)

sxxxx

Contextual Info: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP

OF128

Abstract: HM-65262C-5 65262
Contextual Info: IM III V I M É 9 March 1994 HM 65262 DATA SHEET_ 16 K x1 VERY LOW POWER CMOS SRAM FEATURES . . . . . . ACCESS TIME COMMERCIAL : 70 ns max MILITARY/INDUSTRIAL : 70/85 ns (max) VERY LOW POWER CONSUMPTION ACTIVE: 110 mW(typ) STANDBY : 2.0 fiW (typ)

Contextual Info: SB H A R R HM-65262 IS S E MI C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Fast Access T im e .70/85n* Max Low Standby Current. 50nA Max

smd transistor A13

Abstract: A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
Contextual Info: HM-65262 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced

S-80141ALMC notes

Contextual Info: H A SEMICOND S E C T O R TS Ï Ë| 4 3 0 5 S 7 1 0 0 1 D 7 S S R R I S 16K x 1 Asynchronous CMOS Static RAM □ HM-65262 HARRIS Pinouts Features TOP VIEW • Low Standby C u rre n t. 50//A

2sc 6200

Contextual Info: HM -65262 fH HARRIS S E M I C O N D U C T O R 16K x 1 A s y n c h r o n o u s C M O S Static RAM August 1996 Features Description The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Harris Advanced SAJI V process. The device utilizes asynchronous circuit

HM-65262

Contextual Info: HM-65262/883 TM 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/85ns Max

Contextual Info: IlM l DATA SHEET_ HM 65262 16 Kx 1 VERY LOW POWER CMOS SRAM FEATURES . 300 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . SINGLE 5 VOLT SUPPLY . EQUAL CYCLE AND ACCESS TIME . GATED INPUTS : NO PULL-UP/DOWN

Contextual Info: Inllll I V l M September 1989 DATA SHEET_ HM 65262 16 k x 1 VERY LOW POWER CMOS SRAM FEATURES . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE : 110 mW (typ)

Contextual Info: ¡2 HM-65262 H A R R IS 16K x 1 Asynchronous CMOS Static RAM Pinouts Features T O P VIEW • Low Standby C u rre n t. 50//A • Low Operating C u rre n t. 50m A

6216 static ram

Abstract: 6216 ram
Contextual Info: m U U HM-8816H HARRIS S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January1992 Features Description The HM-8816H is a high speed, asynchronous CMOS static RAM module, based on a multilayer, co-fired, dual-in-line ceramic substrate and eight HM-65262 16K x 1 asynchro­