16384 Search Results

Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

d8227

Abstract: 16384
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. HIGH-SPEED EPI-CMOS 16384 X 9-BIT PARALLEL FIFO SPACE PRODUCTS 7206ERP W 1 28 VCC D8 2 27 D4 D3 3 26 D5 D2 4 25 D6 D1 5 24 D7 D0 6 23 FL/RT XI 7 22 RS FF 8 21 EF Q0 9 20 XO/HF Q1 10 19 Q7 Q2 11 18 Q6 Q3 12 17 Q5 Q8 13 16

16KX8

Abstract: X76F128 X76F
Contextual Info: X76F128 128K 16Kx8+64x8 Secure FEATURES DESCRIPTION • 64-bit Password Security —Five 64-bit Passwords for Read, Program and Reset • 16384 Byte+64 Byte Password Protected Arrays —Seperate Read Passwords —Seperate Write Passwords —Reset Password

93LC86X

Abstract: 100PF AM93LC86
Contextual Info: AM93LC86 16384-bits Serial Electrically Erasable PROM General Description Features • State-of-the-art architecture - Non-volatile data storage - Standard voltage and low voltage operation Vcc: 2.7V ~ 5.5V - Full TTL compatible inputs and outputs - Auto increment read for efficient data dump

W24129AK-12

Abstract: W24129AK-15 W24129A W24129A-12 W24129A-15 W24129AJ-12 W24129AJ-15
Contextual Info: W24129A 16K x 8 HIGH-SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24129A is a high-speed, low-power CMOS static RAM organized as 16384 × 8 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

Contextual Info: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter

Contextual Info: 8 Bit Microcontroller TLCS-870/C Series TMP86FH46ANG 2010 TOSHIBA CORPORATION All Rights Reserved TMP86FH46ANG Difference among product TMP86xx46 Series 86C846 86CH46 86CM46 86CH46A 86CM46A 86PM46 86PH46 ROM 8192bytes (MASK) 16384bytes (MASK) 32768bytes

DS2505

Abstract: 007H DS2505P DS2505T DS2505V 2n7000 equivalent
Contextual Info: DS2505 DS2505 16K bit Add–Only Memory FEATURES • 16384 bits Electrically Programmable Read Only Memory EPROM communicates with the economy of one signal plus ground • Unique, factory–lasered and tested 64–bit registration number (8–bit family code + 48–bit serial number

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

SN74V273

Abstract: SN74V273-EP SN74V273PZAEP SN74V283 SN74V283-EP SN74V293 SN74V293-EP SN74V263 SN74V263-EP SN74V263PZAEP
Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695 – JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

DS2012

Abstract: DS2212 OC310
Contextual Info: DALLAS SEMICONDUCTOR CORP 3SE D abmi30 Q0D32S7 fi IDAL DS2212 • PRELIMINARY "T-4fc>‘3S DS2212 FIFO Stik DALLAS SEMICONDUCTOR FEATURES PIN CONNECTIONS • Flrst-in, flrst-out memory-based architec­ ture o =1 • Flexible 16384 x 9 organization Z~3 a CZ3

M5M5118P-15

Abstract: M5M5118P 16384-BIT M5M51 si1515 M5M5118
Contextual Info: M ITSUBISHI L S Is M5M5118P, -15 16384-BIT 2048-W O R D B Y 8-BIT C M O S STATIC RAM D ESCRIPTION The M5M 5118P series of 2048-word by 8-bit asynchronous PIN C O NFIG URATIO N (TOP V IEW ) silicon gate C M O S static R A M operates on a single 5V power supply and is designed for easy use in applications

128X128

Abstract: HN25168S HN25169S
Contextual Info: HN25168S, HN25169S —Preliminary— 2048-word x 8-bit Programmable Read Only Memories The H IT A C H I H N 25168S and H N 25169S are high speed electrically programmable, fu lly decoded T T L B ipolar 16384 b it read on ly memories organized as 2048 words by 8 bits w ith on-chip address

Contextual Info: HM6789 Series Maintenance Only Refer to HM6789HA Series 16384-word x 4-bit High Speed Hi-BiCMOS Static RAM with OE Feature* • Super Fast Access T im e :. 25/30 ns (max) • Low Power Dissipation (DC) Operating . . 230 mW (typ.)

Contextual Info: HM101494 Series-16384-Words x 4-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM101494 is ECL 100K compatible, 16384-words by 4-bits read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

HM6788HAP-15

Abstract: HM6788HAP-12 HM6788HA
Contextual Info: HM6788HA Series 16384-word x 4-bit High Speed Hi-BiCMOS Static RAM Features • 16384-word × 4 bit organization • 1.3 µm Hi-BiCMOS process • Super fast Access time: 12/15 ns max • Low power dissipation (DC) operating: 300 mW (typ) • +5 V single supply

iButton Chips

Abstract: DS9092 DS1995 DS1996 DS9093F DS9093RA DS9101 UL913
Contextual Info: DS1995 DS1995 16Kbit Memory iButtonTM F5 MICROCANTM SPECIAL FEATURES • 16384 bits of read/write nonvolatile memory • 256–bit scratchpad ensures integrity of data transfer • Overdrive mode boosts communication to 142k bits 5.89 0.36 0.51 per second

HM-65262C-5

Abstract: 65262 HM65262 HM-65262 HM-65262C-9
Contextual Info: HM65262 16K x 1 Very Low Power CMOS SRAM Introduction The HM 65262 is a very low power CMOS static RAM organized as 16384 x 1 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM 65262 are TTL compatible and operate from single 5V supply thus

Contextual Info: HM 65788 MATRA MHS 16 K x 4 High Speed CMOS SRAM Introduction The HM 65788 is a high speed CMOS static RAM organized as 16384 × 4 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip

MMCP-672061FV-15

Abstract: MMCP-672061FV-15-E MMCP-672061FV-30 SMCP-672061FV-15SB SMCP-672061FV-30SB M672061F
Contextual Info: Features • • • • • • • • • • • • • • First-in first-out dual port memory 16384 x 9 organisation Fast Flag and access times: 15, 30 ns Wide temperature range: - 55 °C to + 125 °C Programmable Half Full Flag Fully expandable by word width or depth

Contextual Info: FUJITSU M I CR OELE CT RO NI CS 23E D F U JIT S U 374T7fa2 0QQÖ3S5 S M B M 1 0 0 4 8 4 A -8 —r - » / / / T ^ h ? " 2 .3 > - 0 8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit E C L read/write random

Contextual Info: FUJITSU M I CRO EL EC TR ON IC S FU JITSU 23E D • 3?417fa2 OODÄHSS T BIPOCAR RANDOM* ACCESS M EM O R Y MBM10480A-10 -OS May 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A Is a fuSy decoded 16384-blt ECL read/w rite random access

Contextual Info: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage