15N 50 MOSFET Search Results

15NB50

Abstract: 15N 50 mosfet SWITCHING WELDING SCHEMATIC BY MOSFET
Contextual Info: s = 7 SGS-THOMSON ^ 7# K l « iL iM ( s iO ( g S S T W 15N B 50 N - CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET PRELIMINARY DATA TYPE STW 15N B50 . m . . . . . V dss RDS(on) Id 500 V < 0 .3 6 Î2 14.6 A TYPICAL F tD S ( o n ) =0.33 £1 EXTREMELY HIGH dv/dt CAPABILITY

sgsp531

Abstract: 2sk76 irf33 unitrode VN0340N5 MTD1N40-1 sfn02806 stm231 stm331 650P
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min Max (V) (5) 'sa C Max (F) tr Max (5) tf Max (5) Toper Max (OC) Package Style 150 150 J 150 J 150 150 150 J 150 J 150 A 150 J 150 J TO-39 TO-92

F15N05L

Abstract: F15N06L RFM15N06L RFM15N05L f15n05 RFP15N05L RFP15N06L tl225 RFP mosfets
Contextual Info: 3875081 G E SOLID STATE 01 DE|3ö7SDfll GD1A452 □ | ~ d T m3 1 ~ l I Logic-Level Power MOSFETs _ RFM15N05L, RFM15N06L, RFP15N05L, RFP15N06L F ile N u m b e r 1558 Power Logic Level MOSFETs T E R M IN A L D IA G R A M N-Channel Logic Level Power Field-Effect Transistors L2 FET

S0211

Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) CI. Max tr Max t, Max TOper Max (V) (F) (8) (8) eC) 8.0n 8.0n 13n 8.0n 13n 125 J 125 J 125 J 125 J 125 J 150 150 150 150 150 TO•72 TO·72

GG 06

Abstract: VN35010
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35

KP902A

Abstract: kp904a BFW96 s0212 3N138 MFE3002 3N138 mosfet 3SK72 KT904 SD2150E
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS IDss Max (V) tA) PD Max (W) 50m 50m 50m 50m 50m 50m 50m 1.0 1.0 250m 1.0 250m 40m 70m 360m 200m 150m 150m 150m 150m 150m 360m 20 20 625m 20 1.0 0.36 1.0 ros (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max Max

LTRG

Abstract: P15N06 RFP15N05 15N06 5N06 RFP15N06 FM15N06
Contextual Info: cu R FM 15N 05/15N 06 R FP15N 05/15N 06 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors M ay 1992 Packages Features TO -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0V • rD S o n = 0 .1 4 f l SOURCE y • S O A is P o w e r -D is s ip a tio n L im ite d

15n05

Abstract: RFP15N06
Contextual Info: 4302H71 £ j H a 0054307 r r i • s HAS R F R F M 1 5 N 0 5 / 1 5 N 0 6 P 1 5 N 0 5 / 1 5 N 0 6 N-Channel Enhancement Mode Power Field Effect Transistors May 1992 Packages Features T O -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S o n = 0 . 1 4 n

F15N06L

Abstract: RFP15N05L 15N05L F15N p15n06l FP15N05L
Contextual Info: RFM 15N 05L/06L RFP15N05L/06L h a r r is N -Channel Logic Level Power Field-Effect Transistors L2 FET August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 15A, 5 0 V and 60 V • rD S (O N ) = 0 .1 4 n SOURCE f • Design O p tim ized for 5V G ate Drives

F15N06L

Contextual Info: ti3G2271 0D5M773 Th? HAS R FM 15N 05L/06L R FP15N 05L/06L HARRIS N-Channel Logic Level Power Field-Effect Transistors L2 FET A ug ust 19 91 Package Features TO-204AA BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S (O N ) = 0 .1 4 « DRAIN /( F L A N G E )

F15N05L

Abstract: F15N06L f15n05 f15n06 N05L RFP15N06L 3SI4 RFM15N05L RFM15N06L RFP15N05L
Contextual Info: R F M 1 5 N 0 5 L /0 6 L H A IR R IS RFP15N05L/06L N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features T0-204A A BOTTOM VIEW • 15A, 50V and 60V • rDS(ON) = 0 .1 4 0 DRAIN ^ {F L A N G E ) SOURCE • Design Optimized for 5V Gate Drives

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata S heet TM O S V P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e-ha lf that of standard MOSFETs. This

IRF250a

Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15

15N15

Abstract: rfm15n15 diode RA 225 R
Contextual Info: R FM 15N 12/15N 15 R FP15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d

motorola 15N 06VL

Abstract: 15N 50 mosfet 15N06VL
Contextual Info: MOTOROLA Order this document by MTD15N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T D 15N 0 6V L TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on “ 0.085 OHM N-Channel Enhancement-Mode Silicon Gate

SIEMENS 800

Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80

ccfl lamp circuit diagram

Abstract: ccfl driver schematic 40 ccfl driver schematic ccfl lamp driver circuit diagram capacitor 470n 400V schematic diagram of ccfl inverter 2N7002-SOT23 schematic diagram 0-12v power supply philips ccfl inverter PHU2N50E
Contextual Info: FACT SHEET Signal lamp CCFL application with the UBA2070 Philips Semiconductors Philips Semiconductors Signal lamp (CCFL) application with the UBA2070 FACT SHEET FACT SHEET Signal lamp (CCFL) application with the UBA2070 Author(s): Emile de Jong Philips Semiconductors BL Standard Analog

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

Contextual Info: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Î2 - 14.6A TO-247/ISOWATT218 PowerMESH MOSFET TYP E V STW 15NB50 STH15NB50FI dss 500 V 500 V R D S o n Id < 0 .3 6 Q. < 0.3 6 Q. 14 .6 A 10 .5 A TYPICAL R D S (on) = 0.33 . EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING

ccfl driver schematic

Abstract: schematic diagram 0-12v power supply philips ccfl inverter ccfl lamp circuit diagram 12v schematic of fluorescent lamps charging control lm358 fluorescent lamp circuit diagram BAS216 8 CCFL Lamps Inverter circuit 6 ccfl inverter
Contextual Info: FACT SHEET Desktop lamp CCFL application with the UBA2070 Philips Semiconductors Philips Semiconductors Desktop lamp (CCFL) application with the UBA2070 FACT SHEET FACT SHEET Desktop lamp (CCFL) application with the UBA2070 Author(s): Emile de Jong Philips Semiconductors BL Standard Analog

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70

MTM15N35

Abstract: 15N 50 mosfet 15N45
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S T M O S P O W E R FETs 15 A M P E R E S These TM O S Pow er FETs are designed fo r high v o lta g e , high

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES PACKAGE DRAWING Unit: mm High output, High gain Po = 100 W, GL = 13 dB (TYP.) (f = 900 MHz)

Contextual Info: MOTOROLA SC XSTRS/R F böE D • b3b?254 QQTfiTS? 6b3 ■ MOTb MOTOROLA ■ S E M IC O N D U C T O R TECHNICAL DATA MTP15N05EL Designer's Data Sheet M otorola Preferred Device Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate Vi This Logic Level TM OS Power FET is designed for high