13004 TRANSISTOR Search Results

13005 2 transistor

Abstract: transistor 13005 13005 TRANSISTOR EB 13005 transistor E 13005 13005 NPN Transistor PC 13005 TRANSISTOR E13005 13005 power transistor EN 13005 2
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol VcBO : K S E 13004 : KSE13005 Collector Emitter Voltage

transistor 13005

Abstract: 13005 TRANSISTOR 13005 2 transistor 13005 13005 2 13004 TRANSISTOR 13005 A 13005 equivalent PC 13005 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: MJE13004 NPN MJE13005 (NPN) SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating 13004 Collector-base voltage Vcb 600 Collector-emitter voltage Vceo 300 Emitter-base voltage Veb 9 Collector current (DC) Ic 4.0 Collector current (Pulse)

13005 2 transistor

Abstract: transistor 13005 transistor E 13005 13005 EB 13005 13005 TRANSISTOR transistor d 13005 Transistor 13005- 2 EN 13005 2 EN 13005
Contextual Info: KSE13004/13005 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION TO-220 • H igh S p eed Sw itching • Suitable for Sw itching Regulator and M otor Control ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic C o lle cto r Base Voltage : K S E 13004

13005 ballast

Abstract: 13005 ballast with 13005 Electronic ballast with 13005 E13005 13005 2 13005 s 13004 E 13005 s 13005 applications
Contextual Info: Î- 1 TELEFUNKEN ELECTRONIC 17E D • fi^aODTb DGCHbaS 0 TE 13004 TE 13005 electronic Creative "fe c h n o to g « T-33MI Silicon NPN Power Transistors A p p lications; Sw itching mode power supply, electronic ballast Features: • In multi diffusion technique

BR 13005

Abstract: 13005 13005 ballast ballast with 13005 AEG T 250 N 700 transistor 13005 E 13005 s BR 13005 A 13004 TE13004
Contextual Info: A E G CORP 1 ?E D O O a 'ì ' 4 2 b 0 0 0 1 1 .3 5 4 • TE 13004 ■TE 13005 1T11SFKKS1S ele ctro n ic Creat«TechnoJogies T - 3 3 MI Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Transistors 13005 D

Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K
Contextual Info: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use

EB 13005

Abstract: Transistors 13005 D MJE13004
Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.

13005 2 transistor

Abstract: 13005a transistor 13005 13005 TRANSISTOR MJE13005A transistor 13005 CIRCUIT transistor E 13005 13004 TRANSISTOR tr 13005 13005 A
Contextual Info: r c G o n ia 7 i D EV ELO PM EN T DATA T his data sheet contains advance information and MJE 13004 MJE 13005 specifications are subject to change w ithout notice. N AMER PHILIPS/DISCRETE 25E D -T -S 3 -J 3 * SILICON DIFFU SED PO W ER T R A N SIST O R S High-voltage, high-speed glass passivated npn power transistor in a T 0 -2 2 0 envelope intended for use

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

E13005

Abstract: LO 13005 e13005t E 13005 transistor Electronic ballast 13005 transistor E 13005 13004 TRANSISTOR TR 13005 transistor tr 13005 E 13005 TRANSISTOR
Contextual Info: Te m ic TE13004 • TE13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Pow er dissipation P,ot = 57 W • Glass passivation • Short sw itching tim es Applications

Contextual Info: 130-04 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MJE13004, MJE13005 HARRIS S E n i C O N D S E CT OR File N u m b e r 1 8 4 0 SbE T> m 43Q5271 ÜG4Gflflfl f i d *H AS - 3 5 - I S 4-A SwttchM ajiW Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

BUV93

Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
Contextual Info: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

ksd 250v 10a

Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623

ksd 250v 10a

Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715

2SC102 transistor

Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

Belcanto ST 3010

Abstract: atakassette Belcanto ST 3001 Stern Radio VEB Kombinat service-mitteilungen robotron stern elite Sonneberg Phonett
Contextual Info: SERVICE-MITTEILUNGEN V E B INDUSTRIE V E RTR IEB RU ND FU NK UND FE RN SE H EN r a d i o -television AUSGABE: S E IT E AUGUST 1 - ö Import* Zu dan BandgeräteImporten des Jahres '1974- gehören auch die ungarischen Stereo-Kassetten-Tonbandgeräte MK-!»2/MK'lt3

MHT1810

Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

MP2143

Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I