2SC291 Search Results

2SC2914

Abstract: "Switching Regulator"
Contextual Info: Inchange Semiconductor Product Specification 2SC2914 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SA12

Abstract: c2911 SA1209 2SA1209 2sc291 2SC2911 A1209 120EI
Contextual Info: Ordering num ber: EN779C _ 2SA12Q9/2SC2911 PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features • Adoption o f FBET process • High breakdown voltage • Good linearity o f hpE and small

Contextual Info: Ordering number : EN779C 2SA1209/2SC2911 No.779C SAHYO PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications i Features • A d o p tio n o f F B E T process • High breakdown voltage • G ood linearity o f h F E and small C o b

2SA1208

Contextual Info: Ordering number: EN 7 8 1 F 2SA1208/2SC2910 No.781F PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Audio 80W Output Predriver Applications F eatu res •Adoption of FB E T process. . High breakdown voltage. ■Excellent linearity of hEE and small c0b.

2SA1210

Abstract: 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536
Contextual Info: SANYO SEMICONDUCTOR CORP IE E D I 7 cH 7 0 7 b T - a - c n 2SC2912 NPN /pnp Epitaxial Planar Silicon Transistors 200 9A High Voltage Switching, AF 1 5 0 W Predriver Applications 2SA1210 780C Features • Adoption o f FBET process • High breakdown voltage

IC 7812

Abstract: 2SA1208 CHARACTERISTICS OF IC 7812 specifications of OF IC 7812 OF IC 7812 IC 7811 2SC2910 ITR03005 for ic 7812 7812 ic
Contextual Info: Ordering number:ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.

2Sc2911

Abstract: 2SA1209
Contextual Info: Ordering number:EN779C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob.

2SC2911

Abstract: 2SA1209
Contextual Info: 2SA1209 / 2SC2911 Ordering number : EN0779E SANYO Semiconductors DATA SHEET 2SA1209 / 2SC2911 PNP / NPN Epitaxial Planar Silicon Transistors 160V / 140mA High-Voltage Switching and AF 100W Predriver Applications Features • • • • Adoption of FBET process.

2SA1209

Abstract: 2SC2911
Contextual Info: 2SA1209 / 2SC2911 注文コード No. N 0 7 7 9 E 三洋半導体データシート 半導体ニューズ No.N779C をさしかえてください。 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 2SA1209 / 2SC2911 160V / 140mA スイッチング ,

Contextual Info: 2SC2912 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)140m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.250 h(FE) Max. Current gain.

8C533

Abstract: 2SC3478-k 2SC3744 2SC3478K 2sc3248 2SC2230Y je5551 2SC238 SANYO NEG KT611
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 5 10 2S0668A 2S0757 2SC2383 2S0669A 8F294 TMPT5551 MPS5551M S05551 2SC1654 2SC1654 ~:8~~654N6 15 20 MM8C1654N6 2SC2910 2SC2230 2SC2383R MM8C1654N7 MM8C1654N7 JE5551A 8C533 ~~g~~:~ 25 30 2SC3645R JE5551 8SR19A A

2SC2913

Contextual Info: Inchange Semiconductor Product Specification 2SC2913 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING See Fig.2

2SA1210

Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
Contextual Info: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage

specifications of OF IC 7812

Abstract: IC 7812 OF IC 7812 2SC2910 2SA1208 IC 7814 CHARACTERISTICS OF IC 7812 IC 7812 information 7812 ic for ic 7812
Contextual Info: Ordering number:EN781F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob.

2SC2911-SPICE

Abstract: 2SC2911 npn 100n
Contextual Info: 2SC2911 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 53.00f NF 1 IKF 100.0m NE 2 NR 1 90.00m IKR NC 2 IRB 600.0u RE 190.0m XTB XTI 3 VJE 680.0m TF 700p VTF 500 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A

2Sc2911

Abstract: 2SA1209 ENN779D
Contextual Info: Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage. · Good linearity of hFE and small Cob.

Contextual Info: XÖ-SHIHTTTnrrS’C R ETE/O P TO J 9097250 TOSHIBA ~5b i6L 07 616 <DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED TYPE DET^aTTaSO v DGD7hlt, - r 3 3 * 1 3 - 2SC2914 _ INDUSTRIAL APPLICATIONS U n i t in m m S W IT C H IN G REGULATOR AND HIGH VOLTAGE S W IT C H IN G A P P L IC A T IO N S .

3D NPN 400V

Abstract: 2SC2913 AC74 ic s 544 a
Contextual Info: t o s h ì b T T m s c r e t é T ó p "Sb W 9097250 TOSHIBA »rilQITaSO <D IS CR E TE /O PT O 56C 07613 2SC2913 Q0Q7bl3 Q D SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in mm S W IT C H IN G REGULATOR AND HIGH VOLTAGE S W IT C H IN G A P P L IC A T IO N S .

b1181

Abstract: sj 2025 2SA1210 JIS B1181 sj 2038 2SC2912
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D I T - Q 1 - 3 7 * ^ 7 Q7b Q003775 0 l \ " 2SA1210 Epitaxial P la n a r S ilic o n T ra n sisto rs P N P/npn 2009A High Voltage S w itch in g , A F 1 5 0 W Predriver A p p lications 2SC2912 780C Features • A d o p tio n o f F B E T process

2SC2913

Contextual Info: SavantIC Semiconductor Product Specification 2SC2913 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING See Fig.2

2sc2915 hitachi

Abstract: 2Sc515a 2SC2611 2SC1515 2SC2181 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762
Contextual Info: 116 - a m. £ Type No. 2SC 1490 t h□— ^ 2SC 1491 i h□ — =7 2SC2102 2SC2102 2SC 2SC 2SC 2SC ¿01/ 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC ^ h□— •=£ h□ — 2SC2103 2SC2181 2SC2282 2SC3008-KA 2SC2917 2SC2181 2SC1165 2SC2917 2SC2762 2SC 1514

2SC2914

Contextual Info: SavantIC Semiconductor Product Specification 2SC2914 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING see Fig.2

2SC2914

Abstract: E710
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2914 INDUSTRIAL APPLICATIONS Unit in nun SW IT C H IN G REGULATOR AND HIGH VOLTAGE SW IT C H IN G A P P L IC A T IO N S . 0 25.0 MAX- HIG H SPEED DC DC CONVERTER A P P L I C A T I O N S . 0 2 1 . 0 MAX- FEATURES: . Excellent Switching Times

2SA1209

Abstract: 2sa1209 equivalent 2SC2911 HIGH VOLTAGE POWER PNP TRANSISTORS S100-400 2SC291
Contextual Info: Inchange Semiconductor Product Specification 2SA1209 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2911 ·High breakdown voltage ·Fast switching speed APPLICATIONS ·High-voltage switching and AF 100W predriver applications