2SC292 Search Results

2SC2926

Abstract: 2SC2926S 2SC292S IS442
Contextual Info: a 7aaacH c ooos?3a t e i r h h 4DE D ROHM CO LTD / T ransistors 2SC2926/2SC2926S - 2SC2925 2SC2926S — . • 7 = 3 1 -1 7 - a S â fiiiS Îiffl/R F Amplifier Epitaxial Planar NPN Silicon Transistors • \f > il3 /D im e n s io n s U nit : mm)

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

2SA1215

Abstract: 2SC2921
Contextual Info: Inchange Semiconductor Product Specification 2SA1215 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC2921 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

2SC2921

Abstract: 2SA1215
Contextual Info: Inchange Semiconductor Product Specification 2SC2921 Silicon NPN Power Transistors DESCRIPTION ・With MT-200 package ・Complement to type 2SA1215 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to

2SC2927

Contextual Info: SavantIC Semiconductor Product Specification 2SC2927 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector-emitter voltage : VCEO=300V ·High frequency:fT=40MHz Min APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits.

2SC2923

Contextual Info: SavantIC Semiconductor Product Specification 2SC2923 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For color TV chroma output applications PINNING see Fig.2 PIN DESCRIPTION 1 Emitter 2 Collector 3 Base

transistor 2SA1216

Abstract: 2SC2922 transistor 2sc2922 2SA1216 2sa1216 transistor 2sa1216 transistor general purpose
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 APPLICATIONS ·Designed for audio and general purpose applications.

tl 271

Abstract: 2SC1815 2SC2926 2SC290B 2SC1923 2sc1959 2SC1907 288a 2SC266B 2SC828
Contextual Info: ft §y £ Type No. € = Manuf. SANTO m Ä 2 TOSHIBA m. NEC B HITACHI tL * ± a FU JITSU fé T MATSUSHITA m h MITSUBISHI □ — A ROHM * 2SC 251A n 2SC941TM 2SC1215 * 2SC1923 2SC1215 2SC2926 2SC1923 2SC1215 2SC2926 2SC 252 ^ a m * 2SC 253 * 2SC 260 ✓

2SC 1207

Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906

2SC2922

Abstract: diode 0.2 V 1A
Contextual Info: 2SC2922 Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION High frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-200 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value

2SC2926

Abstract: 2SC2926S
Contextual Info: 2SC2926/ h -7 > S' * 9 /Transistors X b‘^ + y 7 ^ l/ - t r iN P N 2SC2926 2SC2926S A m p lifie r E pitaxial P la na r NPN S ilico n T ra n sisto r • «* • flJ fê 'îti& ta /D irn e a s io n tt Un*! : mm 1) fT- 1.1 G H z Typ (at 10mA) £ * O . 2S C 2926

2SC2429A

Abstract: 2SC2965 2SC2920 C2429A 2SC2429 2SC2964 C2429 C2920 1S90
Contextual Info: FUJITSU MIC R O E L E C T R O N I C S 31E J> HI 374^2 001fc52ô b H FMI c Q if in r ^ JsnuQfy 1990 Edition1-1_ - , ’ •:= P R O D U C T P R O F IL E — — P 2 3 - Î3 i t FUJITSU . * 2SC2920, 2SC2429, 2SC2429A, 2SC2964, 2SC2965 Silicon High Speed Power Transistor_

2SC2925

Abstract: SC-43A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SC2925

Abstract: SC-43A
Contextual Info: Transistors 2SC2925 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE sat 12.9±0.5

2SC2925

Contextual Info: Transistor 2SC2925 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 5.0±0.2 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol

ET-191

Contextual Info: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*

Contextual Info: 2SC2925 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)700m Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC2921

Abstract: 2SA1215
Contextual Info: JMnic Product Specification 2SA1215 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・Complement to type 2SC2921 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3

2SC2928

Contextual Info: Inchange Semiconductor Product Specification 2SC2928 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage,high speed and high power switching applications PINNING see Fig.2 PIN DESCRIPTION

2sc2922

Abstract: 2sa1216 transistor 2SC2922 transistor 2SA1216
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 APPLICATIONS ·Designed for audio and general purpose applications.

2sc2921

Contextual Info: SANKEN ELE C TR IC CO LTP SSE 7^0741 D OOOtm b TflM ISAKJ Silicon NPN Epitaxial Planar •ÿr LAPT ☆Complement to type 2SA1215 2SC2921 Application Example : e Outline Drawing 3 . .MT-200 Audio and General Purpose Electrical Characteristics

2sc4977

Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Contextual Info: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549

2SA1216

Abstract: 2sc2922 safe operating area transistor 2SA1216 2SC2922 2sa1216 transistor general purpose sanken power transistor 2SA1216
Contextual Info: 2SA1216 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC2922 2SA1216 Unit VCBO VCB=–180V –100max µA VEB=–5V –100max µA IC=–25mA –180min V 24.4±0.2 VCEO –180 V IEBO VEBO –5 V V(BR)CEO IC –17 A hFE VCE=–4V, IC=–8A 30min∗

2SA1215

Abstract: 2SC2921 transistor 2SA1215
Contextual Info: 2SA1215 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC2921 •Electrical Characteristics ICBO 2SA1215 Unit VCB=–160V –100max µA 36.4±0.3 24.4±0.2 VEB=–5V –100max µA IC=–25mA –160min V VCEO –160 V IEBO VEBO –5 V V(BR)CEO