2SB143 Search Results

ic est 7502

Abstract: B1439 2SB1439 2SD2183
Contextual Info: Power Transistors 2SB1439 2SB1439 Silicon PNP Epitaxial Planar Type • Package Dim ensions AF Output Am plifier C o m plem entary Pair with 2 S D 2 1 8 3 ■ Features • Low co llector-em itter saturation voltage VcE(sao • High co llector-em itter voltage

Contextual Info: Power T ransistors 2SB1435 2SB1435 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Output Amplifier Unit : mm ■ Features • Low collector-em itter saturation voltage VcE(sao • High collector current (Ic) • Automatic mounting by radial taping is possible.

Contextual Info: Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features ■ Absolute Maximum Ratings 14.5±0.5 ● (1.0) ● *1 0.65 max. High collector to emitter voltage VCEO.

2SB1430

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers

2SB1438

Abstract: 2SD2184
Contextual Info: Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● 1.45 0.8 0.2 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).

2SB1438

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 ue pl d in an c se ed lud pl vi an m m es

2SB1435

Abstract: SJD00074BED
Contextual Info: Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping

2SB1438

Abstract: 2SD2184 PF-8500
Contextual Info: Transistor 2SD2184 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB1438 6.9±0.1 4.0 2.5±0.1 0.8 • Features (0.5) (1.0) (0.2) 4.5±0.1 0.7 (1.0) 0.65 max. 14.5±0.5 • High collector to emitter voltage VCEO

2SB1438

Contextual Info: Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou

2SB1434

Abstract: 2SD2177
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features • Low collector to emitter saturation voltage VCE sat • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency output amplification

2SB1434

Abstract: 2SD2177
Contextual Info: Transistor 2SD2177 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SB1434.

2SB1438

Abstract: 2SD2182
Contextual Info: Panasonic 2SD2182 -> ' 3 > N P N I \ ¿ * -> 7 )\>- ? \s - i-J& 2SB1438 •m fi • 3 U ? ? • X Î -, ? MfE VCEO • 3 1/^ÿ'X 5-; • 7 - > ' 7 ) V f - t f > ^ T ' W f  f ê ñl#é„ VCE sat)Ä!l V ' o ■ IÈ * Î* * J È tt-(T a = 2 5 t) Item 3 1 /^

2SB1438

Contextual Info: Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Large collector-emitter voltage (Base open) VCEO • Allowing supply with the radial taping

2SB1435

Contextual Info: Power Transistors 2SB1435 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping 16.0±1.0

2SB1435

Abstract: SJD00074BED 2SB143
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 • Low collector-emitter saturation voltage VCE(sat)

2SB1436

Contextual Info: Transistors Low Frequency Transistor 20V, 5A 2SB1386/2SB1412/2SB1326/2SB1436 • F e a tu re s 1) •E xtern a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = —0.35V (Typ.) (I c / I b = -4 A / -0 .1 A ) 2) Excellent D C current gain charac­ teristics.

2SB1436

Contextual Info: h 7 > y ^ ^ /Transistors 2SB1436 2SB1436 1 1°$ * '> TJl>y Is - +M PNP y V □ > K ÿ > y 7. $ Epitaxial Planar PNP Silicon Transistor ‘l£J§ J&5^iÖlH ffl/Lo w Freq. Power Amp. N P 7 7 7 s> =lffl/Strobo Flash • W f i\ f 5 il2 l/ D im e n s io n s U n it : mm)

2SB1434

Abstract: 2SD2177
Contextual Info: Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Contextual Info: 2SB1436 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

FIL CRF0881B062

Abstract: 2SB1438
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) • Low collector-emitter saturation voltage VCE(sat) • Large collector-emitter voltage (Base open) VCEO

2SB1431

Contextual Info: '$7$ 6+ 7 6,/,&21 32:(5 75$16,6725 6% 313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 25 /2:)5(48(1&< 32:(5 $03/,),(56 $1' /2:63(' 6:,7&+,1* The 2SB1431 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers