SJD00074BED Search Results

2SB1435

Abstract: SJD00074BED
Contextual Info: Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping

2SB1435

Abstract: SJD00074BED 2SB143
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC

2SB1435

Abstract: SJD00074BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC