12N60 DC Search Results

12N60 DC Result Highlights (5)

Part	Manufacturer	Description
DCH010505DN7	Texas Instruments	Miniature, 1W, 3kVDC Isolated DC/DC Converters 5-SIP MODULE -40 to 85
DCP010512DBPE4	Texas Instruments	Miniature, 1W Isolated Unregulated DC/DC Converters 7-PDIP -40 to 100
DCP011515DBP	Texas Instruments	Miniature, 1W Isolated Unregulated DC/DC Converters 7-PDIP -40 to 100
DCP012415DBP-U/700	Texas Instruments	Miniature, 1W Isolated Unregulated DC/DC Converters 7-SOP -40 to 100
DCP020507U/1K	Texas Instruments	Miniature, 2W Isolated Unregulated DC/DC Converters 12-SOP -40 to 85

12N60 DC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
tf 12n60 Contextual Info: AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC	Original	AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FDL AOB12N60FDL AOTF12N60FDL O-220 O-263 O-220Fate tf 12n60	PDF
12N60 Abstract: 12n60 dc Contextual Info: 3VD499600YL 3VD499600YL 高压MOSFET芯片描述 Ø 3VD499600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管；先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	3VD499600YL 3VD499600YL 3VD499600YLN 600VMOS O-220 12N60 12N60 12n60 dc	PDF
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS	PDF

Catalog Datasheet

Type

Document Tags

PDF

tf 12n60

Contextual Info: AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC

Original

AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FDL AOB12N60FDL AOTF12N60FDL O-220 O-263 O-220Fate tf 12n60

PDF

12N60

Abstract: 12n60 dc
Contextual Info: 3VD499600YL 3VD499600YL 高压MOSFET芯片描述 Ø 3VD499600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管；先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；

Original

3VD499600YL 3VD499600YL 3VD499600YLN 600VMOS O-220 12N60 12N60 12n60 dc

PDF

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

Original

2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

PDF