125FI Search Results

0545l

Abstract: d25n
Contextual Info: Tem ic SMD/SMU25N05-45L Siliconix N-Channel Enhancement-Mode Transistors, Logic Level 175 °C Maximum Junction Temperature Product Summary rusfw i 50 «& •< « 0.045 25 TO-251 TO-252 o o in r G D D rain C o n n ected to la b S Top View Ci O rd e r N um ber:

gm71c4400b

Contextual Info: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d

KM41C4000A

Contextual Info: S A M S UN G E L E C T R O N I C S INC tME ]> • 7 T b M : m 2 D G 1 M 5 0 4 flOO ■ Sn6K KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic

Contextual Info: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

imate

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. CE REVISIONS DIST 16 LTR DESCRIPTION RELEASED PER NPR 97-343 DATE DUN APVD 4-23-98 TA LB D D L •TRACE L A B E L WHITE C STRIPE C SC L A B E L

T4700B RCA

Abstract: T4700D T4700N T4700 T4700B T4700D RCA 17814 T4700M I342
Contextual Info: G E SOLI» STATE "□1 D E | 3fi7S0fll DD17fim 3 0 1E 17814 3875081 G E S O L I D S T A T E D J £ _ Trfacs File Number 300 T4700 Series 15-Ampere Silicon Triacs For Phase-Control and Load-Switching Applications Features: TERMINAL DESIGNATIONS

DECT/DSP GROUP

Abstract: AN 7274
Contextual Info: SIEM ENS ICs for Communications 4 Channel ADPCM Controller Quad ADPCM PEB7274 Version 1.2 PEF 7274 Version 1.2 Data Sheet 08.97 DS 1 PEB 7274 Revision History: Current Version: 08.97 Previous Version: Preliminary Data Sheet 01.97 Page in previous Version

Contextual Info: BEST COPY AVAILABLE ¿Transmitter/Receiv FEATURES • • • • • • • • • • High Speed: DC~20M b/s NRZ Low Profile: 9mm thick Mountable on Printed Circuit Board 24-pin DIP Packages Fast Peak Hold ATC Function Suitable for Ethernet Type Networks

COUNTER MODULO 503

Abstract: TBA 1205 TBA 281 lcd wz AM2085 TBA 651 eaw t200 T200 BCX1 microprocessor architecture
Contextual Info: Cl Preliminary Am2085 ISDN Subscriber Access Controller ISAC-S Advanced Micro Devices DISTINCTIVE CHARACTERISTICS S-Bus transceiver according to CCITT i.430 Recovery of clock and frame Frame alignment for trunk line termination Access to Echo bit Serial interfaces for various types of B-channel

UTM ceramic RESISTOR 212-3

Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Contextual Info: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components

Contextual Info: KM416C1000B, KM416C1200B KM416V1000B, KM416V1200B Preliminary CMOS DRAM 1Mx16 Bi t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CM O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

MEA8020

Abstract: ACB1608 EPC17 BOBBIN ZCYS51R5-M3PA TCXO 9.9 MHZ CST063 QVC10 NLU160805 tdk Isolators ACL2520
Contextual Info: SM Components at a Glance Product name Type or Series Part No. Multilayer Ceramic Chip Capacitors C1005 [EIA CC0402] W T 1 0.5 0.55 max. Class I 0.5 to 330pF Class II 220 to 100000pF 1.6 0.8 0.9 max. Class I 0.5 to 1000pF Class II 220pF to 1jiF 2 1.25 1.45 max.

tpa 5017

Abstract: HC7046AM DIODE 2FL 20U
Contextual Info: New D a ta - CD54/74HC7046A CD54/74HCT7046A File N um b er 1 9 2 0 HARRIS SEMICOND SECTOR 27E D 4302271 OQlfllbM 4 B H A S Phase-Locked Loop with VCO And Lock Detector T yp e Features: • C enter fre que ncy o f 18 M H z typ . at Vcc = 5 V

mn373

Abstract: 3052v 5v MN5287 MN5284 MN5286 MN5285 3052v 15v Micro Networks 8 bit
Contextual Info: UNITRODE/ MICRO NETWORKS b3E D • METWODKS eG 4 8 E 7 b D0DS447 T44 ■■ INC MN5284 Series MICRO NETWORKS LO W -P O W E R 16-Bit A ID C O N V E R T E R S DESCRIPTION • 16-Bit Resolution • 15-Bit No Missing Codes • 300mW Max Power Consumption • 50/isec Max Conversion Time

NG9-2

Contextual Info: KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

diode sy 710

Contextual Info: Multi-Feature, Synchronous plus Auxiliary PVVM Controller Description The CS5106 is a fixed frequency, current mode controller with one single NFET driver and one dual FET, synchronous driver. The syn­ chronous driver allows for increased efficiency of the main iso­

LA1352

Contextual Info: >XOX O X O X O X O X O X < > O V .\0> . >xoxo: ^ x o x o x o x o x o x o x o x o x o x c C S -5 1 0 2 1 /2 2 /2 3 / 2 4 Enhanced Current Mode PWM Controller Features Description The CS-51021 / 2 2 / 2 3 / 24 Fixed Frequency PWM Current Mode Controller provides all necessary

Contextual Info: MICRON S E M I C O N D U C T O R INC M IC R O N OO Ü Û Q 4 4 11G b3E D 2 MEG X IMRN MT16D(T 232 32, 4 MEG x 16 DRAM MODULE 2 MEG X 32, 4 MEG X 16 DRAM MODULE FAST-PAGE-MODE (MT16D(T)232) LOW POWER, EXTENDED REFRESH (MT16D(T)232 L) FEATURES PIN ASSIGNMENT (Top View)

gm71c4400az

Contextual Info: T sg r GM71C4400A/AL G oldStar 1,048,576 WORDS x 4 BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4400A/AL is the new generation dy­ nam ic RAM organized 1 ,0 4 8 ,5 7 6 x 4 Bit. GM71C4400A/AL has realized higher density, higher performance and various functions by uti­

Contextual Info: KM48V2104A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The S am sung K M 48 V 2 104 A /A L/A LL /A S L is a high spe ed C M O S 2,0 9 7 ,1 5 2 b i t x 8 D ynam ic R andom A cce ss M em ory. Its d e sig n is o p tim iz e d fo r high

XRT6165ID

Abstract: se819 TX2M
Contextual Info: XR- T61 65 X T E X A R [.th e a n a lo g p lu s c o m p a n y Codirectional Digital Data Processor TM May 1997-3 FEATURES APPLICATIONS • Low Power CMOS Technology • • All Receiver and Transmitter Inputs and Outputs are TTL Compatible CCITT G.703 Compliant 64kbps Codirectional

G732

Abstract: MA811 Marconi radiation hard
Contextual Info: MARCONI CKT TECHNOLOGY 3GE D • S7Ô3442 0001520 5 ■ 7^75'"'// ' 3 3 Digital Switch Module M @ ïc s a i Electronic Devices FEATURES MA811 DIO [7 DI1 DI2 2| FSP1 [2 27] VDD [3 26] CLK 2| CI1 * Single 5v supply DI3 [4 * Low power CMOS design DI4 [5 ¡3

IN 5008 DIODE

Abstract: TS2143 1125MB 214-3016
Contextual Info: TS2143 Series il i ri r i»r RUGGEDIZED DIGITAL FIBER OPTIC TRANSMITTER FEATURES: ►Data Rates to 125 Mb/s ►1.3pm LED Operation ►+ 5 Volt Operation ►16 Pin Package ►PECL Data Compatible ►FDDI & SAFENET Compliant DESCRIPTION: The TS 2143 Series is a line of extended performance transmitters used in rugged fiber optic communication

ZO125

Abstract: transistor c373 74HC244 HD74HC273 74hc123 application notes lm 74ls04 74L 74H 74S 3T5T PNP power transistors by hitachi HD74HC04
Contextual Info: Application Note 1. Input Protection Circuit An Si-gate process is applied to Hitachi's high-speed CMOS input protection resistor as shown in Figure 1a , input over­ logic ICs. They have a thinner gate oxide compared to conven­ current flows directly to the power supply and the destruction