10OKRAD Search Results

Contextual Info: fffj h a rris FSF150D, FSF150R S E M I C O N D U C T O R " W J " W • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs March 1995 Features Package • 25A N o te1 , 100V, rDS(ON) = 0.070Q TO-254AA • Total Dose Meets Pre-Rad Specifications to 10OkRAD(Si)

Contextual Info: Lin fiA R . TECHNOLOGY _ RH1078M Micropower, Dual, Single Supply Precision Op Amp DCSCRIPTIOn r b s o iu t c The RH1078M is a micropower dual op amp in the standard 8-pin configuration. This device is optimized for single supply operation at 5V. Specifications for ± 1 5V are

Contextual Info: _ RH27C / t i h t o TECHNOLOGY - Precision Operational Amplifier DCSCRIPTIOn R B S O LU T6 m n x im u m r r t i í i g s The RH27C combines very low noise with excellent preci­ sion and high speed specifications. The low 1/f noise corner frequency of 2.7H z combined with 3.5nVVHz 10Hz

Contextual Info: r r u n RH1078M m TECHNOLOGY Micropower, Dual, Single Supply Precision Op Amp D C S C R IP T IO fl a b s o lu te The RH1078M is a micropower dual op amp in the standard 8-pin configuration. This device is optimized for single supply operation at 5V. Specifications for ±15V are

Contextual Info: H a rris 2N7285D, 2N7285R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM240 D, R, H November 1994 t^ 7 2 Ô 5 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 16A, 200V, RDS(on) = 0 .2 4 Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: GEC PLESSEY S E M I C O N D U C T O R S DS3518-3.2 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's CMOS-SOS high perform ance, radiation hard, 3jim technology. The GPS Silicon-on-Sapphire process provides significant

transistor 8831

Abstract: 4204 photo diode
Contextual Info: J ll H a r r i s U U S E M I C O N D U C T O R FRS9240D, FRS9240R, FFÎS9240H 7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.735Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: h a r r is S E M I C O N D U C T O R 2N7292D, 2N7292R 21^72Q2'H REGISTRATION PENDING Currently Available as FRF150 D, R, H September 1994 R a d ia tio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s Package Features • 25A, 100V, RDS(on) = 0.07Q

Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM244 D, R, H November 1994 2N7287D, 2N7287R 2N7287H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 12A, 250V, RDS(on) = 0.400Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H November 1994 2N7281D, 2N7281R 2N7281H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 2A, 500V, RDS(on) = 2.50ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design C oncepts

05-08-1322

Abstract: RH1056A
Contextual Info: U ilfiA R _ TECHNOLOGY RHI056A Precision, High Speed, JFET Input Operational Amplifier DCSCRIPTIOn nftsoiuTt mnximum RnnnGs The RH1056A JFET input operational amplifiers combine precision specifications with high speed performance. Supply Voltage. ±20V

Contextual Info: m a r r is S E M I C O N D U C T O R 2N7290D, 2N7290R 21^7290H REGISTRATION PENDING Currently Available as FRS440 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 5A, 500V, RDS(on) = 1,420ft TO-257AA

RH1086M

Contextual Info: /Tw m _ RH1086M TECHNOLOGY q.5A and 1.5A Low Dropout Positive Adjustable Regulators D C S C R IP T IO n a b s o lu te T h e R H 1 0 8 6 M positive adjustable regu lator is d e sign e d to P o w e r D i s s ip a t io n . Internally Lim ite d

Contextual Info: r r w m . TECHNOLOGY _ RH111 V o lta g e C o m p a r a t o r DCSCRIPTIOn nßsoiuTC mnximum RnnnGs The RH111 is a general purpose voltage comparator. The RH111 offers maximum input offset voltage of 3mV and input offset current of 10nA with a typical response time

Contextual Info: r ru v TECHNOLOGY m . _ RH119 High Performance Dual Comparator D C S C R IP TIO n r b s o iu t c T h e R H 1 1 9 dual c o m p a r a t o r feature s l o w input offset S u p p l y V o l t a g e . 3 6 V

Contextual Info: M GEC PLESS EY S E M I C O N D U C T O R S D S 3 5 1 8 -2 .4 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's C M O S -S O S high p e rfo rm a n c e , ra d ia tio n ha rd, 3n.m technology. The GPS Silicon-on-Sapphire process provides significant

S/A3N01

Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS3597-2.4 MACROSOS1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS’s Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving

Contextual Info: yw us FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210£1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)

Contextual Info: iSì h a r r is UU S E M I C O N D U C T O R FRS130D, FRS130R, FRS130H 12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 100V, RDS on = 0.1950 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concept*

Contextual Info: r r u n RH1021-7 m TECHNOLOGY Precision 7V R eference mnximum r r t iíig s D C S C R IP TIO n absolute The RH1021-7 is a precision 7V reference with ultralow drift and noise, extremely good long-term stability and almost total immunity to input voltage variations. The

SRFE

Contextual Info: H a rris 2N7291D, 2N7291R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRK150 D, R, H November 1994 1 ^ 7 2 9 1 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 40A, 100V, RDS(on) = 0.055Q

Contextual Info: a h a r r is S E M I C O N D U C T O R FSF254D, FSF254R " J " m * • ■ Radiation Hardened, SE G R Resistant N-Channel Power M OSFETs june 1997 F e a tu re s Package • 18A, 250V, rDS ON = 0.170i2 • Total Dose - Meets Pre-Rad Specifications to 100kRAD(Si)

A014G

Contextual Info: _ RH37C / t i h t o TECHNOLOGY - Precision Operational Amplifier DCSCRIPTIOn R B S O LU T6 m n x im u m r r t i í i g s The RH37C combines very low noise with excellent preci­ sion and high speed specifications. The low 1/f noise corner frequency of 2.7H z combined with 3.5nVVHz 10Hz

Contextual Info: Si G E C P L E S S E Y SE M I C O N D U C T O R S DS3597-2 3 M ACRO SO S1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS's Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving