FOR3E13 Search Results

Contextual Info: JANSR2N7403 h a r r is S E M I C O N D U C T O R * mm w m m ^ m m m m m v W ' Formerly Available As FSF9150R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs February 1998 Features Description • 22A, -100V, rDS oN = 0-140i2 The Discrete Products Operation of Harris Semiconductor

Contextual Info: fffj h a rris FSF150D, FSF150R S E M I C O N D U C T O R " W J " W • ■ Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs March 1995 Features Package • 25A N o te1 , 100V, rDS(ON) = 0.070Q TO-254AA • Total Dose Meets Pre-Rad Specifications to 10OkRAD(Si)

CLCC-18

Contextual Info: FRX130D, FRX130R, FRX130H h a r r is S E M I C O N D U C T O R Radiation Hardened N-Channel Power MOSFETs December 1997 Features Description • 6A, 100V, Td s ON = 0-180i2 The Harris Sem iconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of