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    Intel Corporation CL8068404165200S RFEH

    MPU CISC 64-Bit 1.9GHz 1440-Pin FCBGA Tray - Bulk (Alt: CL8068404165200S RFEH)
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    Avnet Americas CL8068404165200S RFEH Bulk 13 Weeks 1
    • 1 $603.74
    • 10 $519.86
    • 100 $517.19
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    Mouser Electronics CL8068404165200S RFEH
    • 1 $642.86
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    EBV Elektronik CL8068404165200S RFEH 40 Weeks 1
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    Omega Engineering SRFE-12-150

    ENCLOSURE HEATERS - Bulk (Alt: SRFE-12-150)
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    Avnet Americas SRFE-12-150 Bulk 1
    • 1 $206.73
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    Intel Corporation CL8068404164700S RFEC

    INTEL XEON E-2276ME PROCESSOR (12M CACHE, 2.80 GHZ) FC-BGA14F, TRAY - Bulk (Alt: CL8068404164700S RFEC)
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    Avnet Americas CL8068404164700S RFEC Bulk 1
    • 1 $601.43
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    Mouser Electronics CL8068404164700S RFEC 3
    • 1 $733.54
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    Intel Corporation CL8068404165100S RFEG

    MPU CISC 64-Bit 2GHz 1440-Pin FCBGA Tray - Bulk (Alt: CL8068404165100S RFEG)
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    Avnet Americas CL8068404165100S RFEG Bulk 1
    • 1 $601.43
    • 10 $539.74
    • 100 $526.25
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    Mouser Electronics CL8068404165100S RFEG
    • 1 $733.45
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    Intel Corporation CL8068404175200S RFEM

    MPU CISC 64-Bit 2.6GHz 1440-Pin FCBGA Tray - Bulk (Alt: CL8068404175200S RFEM)
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    Avnet Americas CL8068404175200S RFEM Bulk 53 Weeks, 1 Days 1
    • 1 $430.00
    • 10 $409.98
    • 100 $395.76
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    Mouser Electronics CL8068404175200S RFEM
    • 1 $524.40
    • 10 $458.29
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    Find more SRFE price and stock on Findchips.com

    SRFE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AO4456

    Contextual Info: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		ao4456 PDF

    AON6718L

    Contextual Info: AON6718L 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core


    Original     		aon6718l PDF

    AO4944

    Abstract: diode G1 24v 5a smps
    Contextual Info: AO4944 Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4944 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low and


    Original     		ao4944diode g124v 5a smps PDF

    AO4708

    Contextual Info: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		ao4708ao4708linteg50000a/us+10e-06 PDF

    7716 mosfet

    Abstract: AON6708
    Contextual Info: AON6708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AON6708/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge.This device is suitable for use as a low side


    Original     		aon6708aon6708/laon6708l-aon6708l+17716 mosfet PDF

    AON7702

    Contextual Info: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		aon7702voltageon7702 PDF

    SRFE

    Abstract: AO4720L 21A66
    Contextual Info: AO4720L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET The AO4720L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		ao4720lsrfe21a66 PDF

    ao4456

    Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
    Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		ao4456ao4456/lao4456l-ao4456l+47716 mosfet24v 20a smps30v 20a smpstyp31 PDF

    Contextual Info: AON6754 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant


    Original     		aon6754 PDF

    aon6718

    Abstract: AON6718L
    Contextual Info: AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is


    Original     		aon6718laon6718 PDF

    AOL1718

    Abstract: M2975
    Contextual Info: AOL1718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is


    Original     		aol1718m2975 PDF

    aon7700l

    Abstract: AON7700 Mosfet AON7700
    Contextual Info: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		aon7700aon7700/laon7700lmosfet aon7700 PDF

    AO4726

    Abstract: L083 AO4726L
    Contextual Info: AO4726 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON and low gate charge. This device is suitable for use as a low side FET in


    Original     		ao4726ao4726/lao4726l-ao4726l+2figure10l083 PDF

    AON7702A

    Contextual Info: AON7702A 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching


    Original     		aon7702a PDF

    AO4712

    Contextual Info: AO4712 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		ao471200a/uscircuit125 PDF

    aon6718

    Contextual Info: AON6718 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON6718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core


    Original     		aon6718 PDF

    aon6704

    Abstract: aon6790
    Contextual Info: AON6704 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		aon6704aon6790 PDF

    mj8050

    Abstract: AOD4112
    Contextual Info: AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		aod4112o-252mj8050 PDF

    AOD4110

    Contextual Info: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		aod4110o-2521e-04figure15 PDF

    AO4714

    Contextual Info: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		ao4714figure10 PDF

    AOL1704

    Contextual Info: AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		aol17040e-05 PDF

    AO4930

    Contextual Info: AO4930 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AO4930 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and


    Original     		ao4930 PDF

    Contextual Info: AO4712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4712/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		ao4712ao4712/lao4712l-ao4712l+100a/us PDF

    Contextual Info: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		aod490o-252000a/us PDF