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    Texas Instruments MMWCAS-RF-EVM

    EVAL BOARD FOR AWR2243
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    DigiKey MMWCAS-RF-EVM Bulk 21 1
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    Mouser Electronics MMWCAS-RF-EVM 31
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    Omega Engineering SRFE-12-150

    SRFE-12-150
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    Avnet Americas SRFE-12-150 Bulk 1
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    Vishay Beyschlag NTCASRFE3C90406

    THERMISTOR NTC 10KOHM 3984K
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    Intel Corporation CL8068404165100S RFEG

    MPU CISC 64-Bit 2GHz 1440-Pin FCBGA Tray - Bulk (Alt: CL8068404165100S R)
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    Avnet Americas CL8068404165100S RFEG Bulk 1
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    Mouser Electronics CL8068404165100S RFEG 3
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    Intel Corporation CL8068404165301S RFEJ

    INTEL XEON E-2254ML PROCESSOR (8M CACHE, 1.70 GHZ) FC-BGA14F, TRAY - Bulk (Alt: CL8068404165301S R)
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    Avnet Americas CL8068404165301S RFEJ Bulk 1
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    Mouser Electronics CL8068404165301S RFEJ
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    SRFE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AO4456

    Contextual Info: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AO4456 AO4456 PDF

    AON6718L

    Contextual Info: AON6718L 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core


    Original     		AON6718L AON6718L PDF

    AO4944

    Abstract: diode G1 24v 5a smps
    Contextual Info: AO4944 Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4944 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low and


    Original     		AO4944 AO4944 diode G1 24v 5a smps PDF

    AO4708

    Contextual Info: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AO4708 AO4708 AO4708L Integ50 000A/us 0E-06 PDF

    7716 mosfet

    Abstract: AON6708
    Contextual Info: AON6708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AON6708/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge.This device is suitable for use as a low side


    Original     		AON6708 AON6708/L AON6708 AON6708L -AON6708L 7716 mosfet PDF

    AON7702

    Contextual Info: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AON7702 AON7702 VoltageON7702 PDF

    SRFE

    Abstract: AO4720L 21A66
    Contextual Info: AO4720L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET The AO4720L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		AO4720L AO4720L SRFE 21A66 PDF

    ao4456

    Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
    Contextual Info: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AO4456 AO4456/L AO4456 AO4456L -AO4456L 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31 PDF

    Contextual Info: AON6754 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant


    Original     		AON6754 PDF

    aon6718

    Abstract: AON6718L
    Contextual Info: AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is


    Original     		AON6718L AON6718L aon6718 PDF

    AOL1718

    Abstract: M2975
    Contextual Info: AOL1718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is


    Original     		AOL1718 AOL1718 M2975 PDF

    aon7700l

    Abstract: AON7700 Mosfet AON7700
    Contextual Info: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AON7700 AON7700/L aon7700l AON7700 Mosfet AON7700 PDF

    AO4726

    Abstract: L083 AO4726L
    Contextual Info: AO4726 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON and low gate charge. This device is suitable for use as a low side FET in


    Original     		AO4726 AO4726/L AO4726 AO4726L -AO4726L Figure10: L083 PDF

    AON7702A

    Contextual Info: AON7702A 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching


    Original     		AON7702A AON7702A PDF

    AO4712

    Contextual Info: AO4712 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		AO4712 AO4712 00A/us Circuit125 PDF

    aon6718

    Contextual Info: AON6718 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON6718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core


    Original     		AON6718 AON6718 PDF

    aon6704

    Abstract: aon6790
    Contextual Info: AON6704 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AON6704 AON6704 AON6790 aon6790 PDF

    mj8050

    Abstract: AOD4112
    Contextual Info: AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		AOD4112 AOD4112 O-252 mj8050 PDF

    AOD4110

    Contextual Info: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AOD4110 AOD4110 O-252 1E-04 Figure15: PDF

    AO4714

    Contextual Info: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		AO4714 AO4714 Figure10: PDF

    AOL1704

    Contextual Info: AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		AOL1704 AOL1704 0E-05 PDF

    AO4930

    Contextual Info: AO4930 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AO4930 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and


    Original     		AO4930 AO4930 PDF

    Contextual Info: AO4712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4712/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		AO4712 AO4712/L AO4712 AO4712L -AO4712L 00A/us PDF

    Contextual Info: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		AOD490 AOD490 O-252 000A/us PDF