FRF150 Search Results

Contextual Info: FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

1E14

Abstract: 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 92 /Subject (25A, 100V, 0.070 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 25A, 100V,

Contextual Info: m W HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRF150 D, R, H 2N7292D, 2N7292R 2N7292H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 25A, 100V, RDS(on) = 0.07ii TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: h a r r is S E M I C O N D U C T O R 2N7292D, 2N7292R 21^72Q2'H REGISTRATION PENDING Currently Available as FRF150 D, R, H September 1994 R a d ia tio n H a rd e n e d N -C h a n n e l P o w e r M O S F E T s Package Features • 25A, 100V, RDS(on) = 0.07Q

1E14

Abstract: 2E12 FRF150R4 JANSR2N7292
Contextual Info: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

12v transformer

Contextual Info: f f i H a r r is U U S E M I C O N D U C T O R FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

ns642

Contextual Info: h a r ^ s S E M I C O N D U C T O R 2N7292D, 2N7292R 2P^72d2H REGISTRATION PENDING Currently Available as FRF150 D, R, H September 1994 R ad ia tio n H a rd e n e d N -C h a n n e l P o w er M O S F E T s Features Package • 25A, 100V, RDS(on) = 0.07S1 TO-254AA

MIL-S-19500

Abstract: 1E14 2E12 FRF150R4 JANSR2N7292
Contextual Info: JANSR2N7292 S E M I C O N D U C T O R Formerly Available As FRF150R4 Radiation Hardened, N-Channel Power MOSFETs June 1997 Features Description • 25A, 100V, rDS ON = 0.070Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

JANSR2N7292

Contextual Info: JANSR2N7292 B Formerly FRF150R4 June1998 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 25A, 100V, ros(ON = 0.070Q The Harris Semiconductor Sector has designed a series of S ECOND GENERATION hardened power M OSFETs of both

Contextual Info: JANSR2N7292 HARRIS S E M I C O N D U C T O R Formerly Available As FRF150R4 Radiation Hardened, N-Channel Power MOSFETs Features Description . 25A, 100V, rDS 0 N = 0.070£2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: JANSR2N7292 Semiconductor Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 25A, 100V, rDS ON = 0.070Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

Contextual Info: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 25A, 100V, rDS ON = 0.070Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

2E12

Abstract: FRF150D FRF150H FRF150R
Contextual Info: FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FRF150D2 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

FRF150R

Abstract: 2E12 FRF150D FRF150H Rad Hard in Fairchild for MOSFET
Contextual Info: FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Rad Hard in Fairchild for MOSFET

Contextual Info: FRF150D, FRF150R, FRF150H 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 25A, 100V, RDS on = 0.07Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2N7292

Abstract: 2N7279
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF150 D, R, H 2N7292D, 2N7292R 2N7292H Radiation Hardened N-Channel Power MOSFETs September 1994 Features Package • 25A, 100V, RDS(on) = 0.07Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Rad hard MOSFETS in Harris

Abstract: 100V 60A N CHANNEL MOSFET
Contextual Info: FRF150D, FRF150R, FRF150H Semiconductor 25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 25A, 100V, RDS on = 0.07£i TO-254AA • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a - M eets Pre-Rad Specifications to 100KRAD(Si)

krad

Abstract: 2E12 2N7268 SFFD150M SFFR150M frf150
Contextual Info: SÜH PRELIMINARY /A: äl i/ / J! // SOLID STATE DEVICES, INC 34 AMP 100 VOLTS 0.07 Q RADIATION HARDENED N-CHANNEL MOSFET 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 Designer’s Data Sheet FEATURES: • ■

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

2N7292

Abstract: 2N7298 2N7294
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 July 2008. INCH-POUND MIL-PRF-19500/605C 16 April 2008 SUPERSEDING MIL-PRF-19500/605B 4 September 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TOTAL DOSE ONLY

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

7404

Contextual Info: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F