FRM240 Search Results

Contextual Info: H a rris 2N7285D, 2N7285R SEMICONDUCTOR 2 REGISTRATION PENDING Currently Available as FRM240 D, R, H November 1994 t^ 7 2 Ô 5 H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 16A, 200V, RDS(on) = 0 .2 4 Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: o HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM240 D, R, H 2N7285D, 2N7285R 2N7285H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 16A, MOV, RDS(on) = 0.240 TO-204AA • Second Generation Rad Hard MOSFET Result* From New Design Concept«

1E14

Abstract: 2E12 FRM240D FRM240H FRM240R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM240D, FRM240R, FRM240H 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, 4 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, A, 0V, 4 m, d rd, Package • 16A, 200V, RDS on) = 0.24Ω TO-204AA

1E14

Abstract: 2E12 FRM240D FRM240H FRM240R
Contextual Info: FRM240D, FRM240R, FRM240H 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 16A, 200V, RDS on = 0.24Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

1E14

Abstract: 2E12 2N7285D 2N7285H 2N7285R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM240 D, R, H 2N7285D, 2N7285R 2N7285H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 16A, 200V, RDS(on) = 0.24Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HA RR IS S E M I C O N D S E CT OR !S\ H A R R I S S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM240 D, R, H SflE D • M 3 Q2 27 1 0 Q 4 S 7 1 0 a?2 M H A S 2N7285D, 2N728ÖH 2N7285H Decem ber 1992 - Radiation Hardened N-Channel Power MOSFETs

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Contextual Info: HARRIS V p 11 SEMCONt SECTOR 4DE D m 2N7285R, 2N7285H HARRIS S E M I C O N D U C T O R RCA H AR RIS GE MB02271 DD337b2 0 EiHAS REGISTRATION PENDING Available As FRM240R, FRM240H IN T E R S IL 3 16A,200V RDS(on =0.24n Radiation-Hardened N-Channel Power MOSFETs

Contextual Info: tyvvys S FRM240D, FRM240R, FRM240H S e m ico n d ucto r y y 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 16A, 200V, RDS on = 0.24S1 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts •

transistor et 454

Contextual Info: en h a r r is U U S E M . C O N D U C T O R FRM240D, FRM240R, FRM240H 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 16A, 200V, RDS on = 0.24Q TO-2G4AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

RAD-HARD igbt

Abstract: transformers 14 H 1a 380 v radiation hardened IGBT Intersil ignition IGBT BTS 425 bts 425 l1 Rad Hard in Fairchild for Diodes Rad Hard in Fairchild for MOSFET 14N4 ASTRO 211 MOSFET
Contextual Info: HGT1S14N41G3VLS, HGTP14N41G3VL Data Sheet September 2000 14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs Title This N-Channel IGBT is a MOS gated, logic level device GT1 which is intended to be used as an ignition coil driver in 4N4 automotive ignition circuits. Unique features include an

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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