100V 100A MOS FET Search Results

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F

100V 100A mos fet

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220F

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33m typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220

Contextual Info: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package  VDS-100V  ID-20A  RDS(ON) -33mΩ typ (VGS=10V ,ID=10A )  Built-in gate protection diode TO220

RDN050N20

Contextual Info: RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

RDN100N20

Contextual Info: RDN100N20 Transistors 10V Drive Nch MOS FET RDN100N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.

RDN150N20

Abstract: 100V 100A mos fet
Contextual Info: RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

1rf510

Abstract: 1rf510 n-channel irf511 irf510 IRF512 IRF513 1RF511 20W Solenoid Driver transistor irf510 IRF510 complementary
Contextual Info: SUPERTEX □1 INC D E l f l 7 7 3 2 c]S □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information W n min) Order Number / Package (max) 100V 60V 0.6Q 0.6Q 4.0A 4.0A IRF510 IRF511

1RF520

Abstract: irf521 irf520 IRF523
Contextual Info: SUPERTEX INC 01 D e | fl773STS GOOlSflH 0 IR F520 IRF521 IR F522 IR F523 R520 R521 Prelim inary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information Order Number / Package ^DSS ^ ^DS ON *D(ON) bvms (max) (min) TO-220 TO-92

IRF510

Abstract: IRF511 irf513 irf512 IRF-510
Contextual Info: □1 SUPERTEX INC D E £ 07732^5 □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Inform ation b v dss/ ^DS ON (max) W n) (min) Order Number / Package ^D G S 100V 60V 0.6Q 0.6Q 4.0A

IRF521

Abstract: IRF522 irf520 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend
Contextual Info: SUPERTEX INC 01 ÇhSupertex inc. D e | fl773STS GOOlSflH 0 IRF520 IRF521 IRF522 IRF523 R520 R521 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information ^DSS ^ Order Number / Package bvms ^DS ON (max) *D(ON) (min)

PDM1405HA

Contextual Info: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

NTE2382

Abstract: NTE2383
Contextual Info: NTE2382 MOSFET N–Channel Enhancement Mode, High Speed Switch Compl to NTE2383 Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay

NTE2383

Abstract: NTE2382
Contextual Info: NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch Compl to NTE2382 Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay

RDN120N25

Contextual Info: RDN120N25 Transistors 10V Drive Nch MOS FET RDN120N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

Contextual Info: SEMICONDUCTOR KU390N10P TECHNICAL DATA N-ch Trench MOS FET General Description TENTATIVE This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,

RDN080N25

Contextual Info: RDN080N25 Transistors 10V Drive Nch MOS FET RDN080N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

Contextual Info: FU JI [MUMmeoe 2SK2446-L,S F-lll S e rie s > Features - N-channel MOS-FET 100V 0,055£2 30A 80 W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier

2N6904

Contextual Info: toaucti, Una* TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6904 N-Channel Logic Level Power MOS Field-Effect Transistors (L2 FET) 8 A, 200 V ros(on): 0.6 0 Features: • Design optimized tor 5 volt gate drive

N mosfet 100v 200A

Abstract: Mosfet 100V 50A EE-CM mosfet 200A SDF200NA10 1D20A
Contextual Info: Æ lltro n PRQPUCT CÂTÂLQQ N-CHANNEL ENHANCEMENT MOS FET 200 A , 100V, o.onn SDF200NA10 HE • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

R9522

Abstract: IRF9523 R9523 IRF9522 G-D-S TO-92
Contextual Info: SUPERTEX INC ÏÏl I>iF | a 7732TS GO OlhûS =5 IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T-37-Z? Ordering Information b v d ss/ O rd e r N u m b e r / P ackage ^DGS ^DS<ON m ax) *D(ON) (m in ) -100V 0.BC1

2SJ456

Contextual Info: 2SJ456 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications •Low ON-state resistance. •High-speed switching. •Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ456-applied equipment.

Contextual Info: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE

Contextual Info: MOSFET MODULE P2H7M441L / P2H7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating