R520 Search Results

Contextual Info: R520 SR5A0 S R520 S R530 S R540 S R550 S R560 S R580 SR5A0 20 30 40 50 60 14 21 30 28 35 20 40 50 80 100 42 56 60 80 70 100 120 0.55 NOTE 3 0.70 0.85 1.0 (NOTE 3) 1.5 50 25 25 500 3.Pulse test : 300 us pulse width, 1% duty cycle 400 A FIG.2-MAXIMUM NON-REPETITIVE PEAK

RS20PH

Abstract: RS20F
Contextual Info: Dimensions Bock connected - flush RS20F in millimetres -—M— i| • i. iR 3 N r m 1 20 Amp 'RED SPOT' fuse holders FiwM/bockCOMWCtwi Front conneited 8 acfc eontw dad - w rffaat RS20P RS20PH R520H Dfcitwakw* in millimetres A B 27.0 79.4 C Cs 54.0 55.0 Pon#l Drìting Dhrwnthni

c536

Abstract: C5361 l504 C5012 C546 A c535 2R521 mitac 2U91 C-238
Contextual Info: 1 2 3 4 5 6 7 8 +5V JP12 2 1 JP 0603B_DFS C49 1 2 2 8 7 6 5 2 ADP3301AR-5/NA SO8 1 GND JP 0603B 330K/NA 0603B R520 R31 1 2 4.7K 0603B 1 2 4.7K 0603B C528 1U 0603B L7 1 L5151 PC/BEEP AUX/L C53 22P 0603B AUX/R LINE/OUT/L GND LINE/OUT/R GND CDROM_L 0603B CDROM_R

Contextual Info: R520 SR5A0 S R520 S R530 S R540 S R550 S R560 S R580 SR5A0 20 30 40 50 60 14 21 30 28 35 20 40 50 80 100 42 56 60 80 70 100 See fig.1 120 0.55 NOTE 3 0.70 0.85 1.0 (NOTE 3) 1.5 50 25 25 500 3.Pulse test : 300 us pulse width, 1% duty cycle 400 A FIG.2-MAXIMUM NON-REPETITIVE PEAK

Contextual Info: R5207AND Data Sheet 10V Drive Nch MOSFET R5207AND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

Contextual Info: 10V Drive Nch MOSFET R5205CND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 Features 1) Low resistance. 2) High speed switching. 0.75 (1) (2)Drain (3)Source 0.8Min. 0.65 0.9 (1)Gate 9.5 1.5 0.5 2.3 (2)

1RF520

Abstract: irf521 irf520 IRF523
Contextual Info: SUPERTEX INC 01 D e | fl773STS GOOlSflH 0 IR F520 IRF521 IR F522 IR F523 R520 R521 Prelim inary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information Order Number / Package ^DSS ^ ^DS ON *D(ON) bvms (max) (min) TO-220 TO-92

IRF521

Abstract: IRF522 irf520 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend
Contextual Info: SUPERTEX INC 01 ÇhSupertex inc. D e | fl773STS GOOlSflH 0 IRF520 IRF521 IRF522 IRF523 R520 R521 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information ^DSS ^ Order Number / Package bvms ^DS ON (max) *D(ON) (min)

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5207AND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5207AND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

R5205C

Contextual Info: 10V Drive Nch MOSFET R5205CND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 Features 1) Low resistance. 2) High speed switching. 0.75 (1) (2)Drain (3)Source 0.8Min. 0.65 0.9 (1)Gate 9.5 1.5 0.5 2.3 (2)

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5207AND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 0.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.

R5205CND

Abstract: R5205C
Contextual Info: 10V Drive Nch MOSFET R5205CND  Structure Silicon N-channel MOSFET  Dimensions Unit : mm CPT3 6.5 5.1 2.3 2.5 0.9 1.5 5.5 Features 1) Low resistance. 2) High speed switching. 0.75 (1) (2)Drain 0.8Min. 0.65 0.9 (1)Gate 9.5 1.5 0.5 2.3 (2) (3) 2.3

LC1210

Abstract: PIC H501 OSC500 ic c575 diagram SMDC110F K3638 SMDC110F-2 adc c520 cd 1691 cp cp c531
Contextual Info: 12位, 80 MSPS/105 MSPS/125 MSPS, 18V模数转换器 AD9233 功能框图 特性 应用 超声设备 中频采样的通信接收机 IS-95CDMA-One、IMT-2000 电池供电仪表 手持式示波仪 低成本数字示波器 概述 AD9233是一款单芯片、12位、80 MSPS/ 105 MSPS/125 MSPS

smd diode c331

Abstract: smd diode c329 smd diode c328 smd diode C616 CR0402-16W-1000FPT r0201 res murata SAMTECTSW10608GS3PIN 0402 lin res smd diode C618 ST C619
Contextual Info: Evaluation Board User Guide UG-290 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD9434 and AD9484 Analog-to-Digital Converters FEATURES Full featured evaluation board for the AD9434 and AD9484

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

T2D DIODE 94

Abstract: QE R518 T2D DIODE 46 EPC1PC8 QE r517 crystal j3f SG-8200 resistor r336 r331 r322 r330 r1 QE r525 qe r524
Contextual Info: LXD9781 PQFP Demo Board with FPGAs for RMII-to-MII Conversion Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document Order Number: 249043-001 LXD9781 PQFP Demo Board with FPGAs for RMII-to-MII Conversion User Guide.

wm8994

Abstract: wm8994 register WM8994E 42750 microphone electret ecm 4f wm8994 LAYOUT GUIDE FLL111 0748H 0738H GP2D
Contextual Info: w WM8994 Multi-Channel Audio Hub CODEC for Smartphones DESCRIPTION FEATURES The WM8994 is a highly integrated ultra-low power hi-fi CODEC designed for smartphones and other portable devices rich in multimedia features. • • • An integrated stereo class D/AB speaker driver and class W

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

Contextual Info: DATA S H E E T JULY 1999 Revision 1.1 LXT384 Octal T1/E1 Transceiver General Description The LXT384 is an octal short haul Pulse Code Modulation PCM transceiver for use in both 1.544 Mbps (Tl) and 2.048 Mbps (El) applications. It incorporates eight independent receivers and eight independent transmitters

ericsson

Contextual Info: Ericssonwide Internal GPRS AND HEALTH ISSUES Prepared also subject responsible if other 1 (1) No. Mikael Westmark Uen Approved Checked Date Rev Jan Ahrenbring ECSMAHJ Nov. 3, 2000 A Reference Statement on GPRS and health related issues External statement:

smd diode c644

Abstract: diode c649 smd diode c548 C748 SMC transistor C734 smd diode c549 C706 diode c624 DIODE smd diode C645 diode c741
Contextual Info: Octal, 12-Bit, 40/50 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 93 mW ADC power per channel at 50 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 84 dBc Excellent linearity DNL = ±0.3 LSB (typical) INL = ±0.4 LSB (typical)

motorola D213 user guide

Abstract: SEMICONDUCTOR J601 eeprom u505 AD9226 J306 J307 J406 sine wave inverter schematic and firmware CR502 vr301 potentiometer
Contextual Info: High Speed ADC USB FIFO Evaluation Kit HSC-ADC-EVALB FEATURES FUNCTIONAL BLOCK DIAGRAM Buffer memory board for capturing digital data used with high speed ADC evaluation boards to simplify evaluation 32 kB FIFO depth at 133 MSPS upgradable Measures performance with ADC Analyzer

DMX RECEIVER

Abstract: UA 741 datasheet GR-253 VSC8150
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet 2.488Gb/s SONET/SDH Overhead Monitor VSC8150 Features • Integrated 2.488 Gb/s Demultiplexer • LOF/SEF Alarm Generation • Outputs SONET/SDH Transport Overhead • Serial Data Loopthrough Output