100JIA Search Results

TM27C512

Contextual Info: _ M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: M $ EPROMs ic r o c h ip EPROM Selection Guide CMOS EPROMs TEMP RANGE STANDBY CURRENT J,K,L,P,SO,TS C,l 2mA/100nA J,K,L.P,SO C,l 2mA/100nA +5V J,K,L,P,SO,TS,VS C,I,E 2mA/100jiA 90-200 +5V J,K,L,P,SO,TS,VS C,I,E 2mA/100|iA 70-150 +5V J,K,L,P,SO,TS,VS C,I,E

Contextual Info: r= 7 M 28F101B M 28V101B S G S -T H O M S O N CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIMES - 60ns fo r M 28F101B version - 150ns for M 28V101 B version ■ LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 PROGRAM/ERASE CYCLES

Contextual Info: P4C1256L LOW POWER 32K x 8 STATIC CMOS RAM à - FEATURES • Vcc Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100jiA/100|iA ■ Access Times —55/70 (Commercial or Industrial)

Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLYVOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 70m A at 10MHz - Stand by Cu rrent 100jiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 1OO^s/byte (typical)

M28F102

Abstract: PLCC44 A1006
Contextual Info: /T 7 S G S -T H O M S O N M28F102 ^7m» ! ÆD gfâ(S!ËiLl5(@Î.rl}3(Q)lfSDÊi 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns - LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

Contextual Info: y M U N ITR G D E UCC5622 PRELIMINARY 27 - Line SCSI Terminator With Split Disconnect DESCRIPTION FEATURES Complies with SCSI, SCSI-2, SCSI-3 and FAST-20 Ultra Standards 2.5pF.Channel Capacitance During Disconnect 100jiA Supply Current in Disconnect Mode

KM61257AL

Contextual Info: KM61257A/KM61257AL CMOS SRAM 2 5 6 K x 1 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 25,35,45ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 2mA (max.) : 100jiA (max.) L-Version Operating : 100 mA (max.) • Single 5 V ± 1 0 % Power Supply

Contextual Info: MXIC M X 28F002T/B 2 M - B I T J 2 5 6 K x 8 C M O S FLA SH M E M O R Y FEATURES 262,144x8 switchable Fast access time: 70/90/120ns Low power consumption - 50mA maximum active current - 100jiAmaximum standby current Programming and erasing voltage 12V ± 5%

Contextual Info: BURR - BROWN XTR112 XTR114 4-20mA CURRENT TRANSMITTERS with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR INDUSTRIAL PROCESS CONTROL • PRECISION CURRENT SOURCES XTR112: Two 250|iA XTR114: Two 100jiA FACTORY AUTOMATION

Contextual Info: /T T *JW, S C S -T H O M S O N Hn»[llLll gra E!IO®i M27C4001 4 Megabit (512Kx 8 UV EPROM and OTP EPROM • FAST ACCESS TIME: 55ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA at 5MHz - Standby Current 100jiA ■ PROGRAMMING VOLTAGE: 12.75V

Contextual Info: P tF S IL C llB K ^ Í P lV MXIC M X28F2000P 2M-BITÍ256K x 8 CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption - 50mA maximum active current - 100jiA maximum standby current • Programming and erasing voltage 12V ± 5%

82HS641

Abstract: 82HS641B/BJA 82HS641B GDFP2-F28 82HS641A 256 x 4 TTL PROM Memory with 3-state outputs
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 64K-bit TTL bipolar PROM 8192 x 8 82HS641A/B FEATURES • Random logic • Address access time: 82HS641A = 55ns max 82HS641B = 45ns max • Code conversion • Input loading: -100jiA max

AF5A

Contextual Info: M X23 C 40 0 0 4 M«rT[S1 8 K x 8 C M O S M A S K R O M FEATURES • • • • • • Operating current: 40m A • Standby current: 100jiA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP 512K x 8 organization Single +5V power supply Fast access time: 100/120/150/200ns max)

Contextual Info: A p p l ic a t io n N o t e and D ev elo pm en t S y stem A V A I L A B L E AN65 • LAPKIT DEMO i m LapKit X88C75 SLIC E2 Microperipheral Port Expander and E2 Memory FEATURES — Low Power • 60mA Active • 100jiA Standby • PDIP, PLCC, and TQFP Packaging Available

VQ1000

Abstract: vq1000n6
Contextual Info: VQ1000 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Inform ation BV dss / Order Num ber / Package b v dgs ^DS ON (max) ^D(ON) (min) 14-Pin P-DIP 14-Pin C-DIP* 60V 5.5Q 0.5A VQ1000N6 VQ1000N7 * 14 pin side brazed ceram ic DIP Advanced DMOS Technology

Contextual Info: 64-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device Recommended Operating Vpp Max 80-Lead Quad Cerpak Gullwing 80-Lead Quad Plastic Gullwing 80-Lead 35mm TAB Tape Die HV34 180V HV3418DG HV3418PG

IC CD 3102

Abstract: 2SC4451 cd 3102
Contextual Info: Ordering num ber : EN3102 No.3102 r _ 2 S C 4 4 5 1 NPN Triple Diffused Planar Silicon Transistor High-Voltage Switching Applications F eatures • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of II VP process

TC54512AP-15

Contextual Info: TOSHIBA TC54512AP-15.-20 TC54512AF-15.-20 SILICON STACKED GATE CMOS 65,536 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY Description The TC54512AP/AF is a 65,536 word x 8 bit CMOS one tim e programm able read only m em ory m olded in a 28-pin plastic

b13s7

Contextual Info: ISOCOfl COMPONENTS LTD 45E » • HfiflbSlQ 0Q0D23S fi « I S O T -4 1 -7 3 lf = 20mA < •r V b v ceo 2V Ij.= 1mA m O O VF o Ui Characteristics CD TRANSISTO R FAM ILY VCE|SAT| lp =100uA v CE= io v Test L -0 VCE SAT> lF = 20mA Ip= 20mA Ip= 20mA lc =40pA lc =125 iA 1c =175nA VCE=10V

Contextual Info: SIEMENS ICs for Communications RF/IF Double PLL Frequency Synthesizer PM B2347 Version 1.1 Preliminary Specification 27 p a g e s in cl. th is p a g e 05.99 Edition 08.98 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73,

74LVT16273ADGG

Abstract: 74LVT16273ADL LVT16273A LVT16273
Contextual Info: Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-bit D-type flip-flop FEATURES _ 74LVT16273A • No bus current loading when output is tied to 5V bus • 16-bit D-type edge triggered flip-flops • Output capability: +64mA/-32mA '

8002 1011 amplifier

Abstract: Power AMPLIFIER 6012 AM6012F OBG analog Philips OR Mullard CRT FOR OSCILLOSCOPES AM6012 AM6012D HTL LOGIC
Contextual Info: Product specification Philip« Semiconductors Linear Products 12-Bit multiplying D/A converter AM6012 PIN CONFIGURATION DESCRIPTION The AM6012 12-bit multiplying Digital-to-Analog converter provides high-speed and 0.025% differential nonlinearity over its full

2N4260

Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
Contextual Info: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000