100B100GW Search Results

Contextual Info: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

Contextual Info: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

C-XM-99-001-01

Abstract: pep cxm MRF21010
Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

100B0R5BW

Abstract: MW4IC2020NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage

Contextual Info: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

TAJE226M035

Abstract: 200B103MW
Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MW4IC2020NBR1

Abstract: Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR
Contextual Info: Document Number: MW4IC2020 Freescale Semiconductor Rev. 8, 5/2006 Replaced by MW4IC2020NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.

ATC capacitor 100b

Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130
Contextual Info: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

marking Z4

Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with

A113

Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station

Transistor J438

Abstract: MRF21010 100B102JW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

PHILIPS capacitors 0.1 mf

Abstract: Transistor t 2 smd motorola
Contextual Info: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010R1

Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

TB200

Abstract: amidon BN-61-202 c12 ph zener diode
Contextual Info: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

Transistor J182

Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
Contextual Info: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies

TLX8-0300

Abstract: "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800 MRF18090A
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance

J182 transistor

Abstract: J152 mosfet transistor MRF9100 MRF9100R3 MRF9100SR3 Transistor J182
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies

MRF21010

Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MW4IC2020NBR1

Abstract: A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW4IC2020N Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage