TAJE226M035 Search Results

Contextual Info: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3

100B0R5BW

Abstract: MW4IC2020NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW4IC2020 Rev. 7, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020 wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P20180HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: MOTOROLA Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150 RF Power Field Effect Transistors MRF5S21150R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21150S Designed for W–CDMA base station applications with frequencies from 2110

Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

TAJE226M035

Abstract: 200B103MW
Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MW4IC2020NBR1

Abstract: Marking Z7 Gate Driver A113 AN1955 AN1977 AN1987 MW4IC2020 MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR
Contextual Info: Document Number: MW4IC2020 Freescale Semiconductor Rev. 8, 5/2006 Replaced by MW4IC2020NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.

A113

Abstract: AN1987 MW4IC2020GMBR1 MW4IC2020MBR1
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line Freescale Semiconductor, Inc. RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi-stage

J1103

Abstract: J294 MRF5S21150H MRF5S21150HR3 MRF5S21150HSR3 TAJE226M035R 465B AN1955 J966
Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

465B

Abstract: AN1955 MRF5S21150 MRF5S21150R3 MRF5S21150SR3 TAJE226M035R vishay mosfet MTBF
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF5S21150R3 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150SR3

MW4IC2020NBR1

Abstract: A113 AN1955 AN1977 AN1987 MW4IC2020GNBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW4IC2020N Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage

Contextual Info: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

vishay mosfet MTBF

Abstract: J29-4 465B AN1955 MRF5S21150 MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150R3 MRF5S21150SR3
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21150/D SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 and MRF5S21150SR3 replaced by MRF5S21150HR3 and MRF5S21150HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21150R3 RF Power Field Effect Transistors MRF5S21150SR3

200B

Abstract: AN1955 MRF5P20180HR6
Contextual Info: Freescale Semiconductor Technical Data MRF5P20180HR6 Rev. 0, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P20180HR6 Designed for W- CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

1206 cms diode

Abstract: 020C AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915MBR1
Contextual Info: Freescale Semiconductor Technical Data MW4IC915 Rev. 3, 12/2004 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

Motorola 506

Contextual Info: MOTOROLA Order this document by MW4IC2020/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC

Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P20180/D SEMICONDUCTOR TECHNICAL DATA Replaced by MRF5P20180HR6. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line MRF5P20180R6 RF Power Field Effect Transistor 1990 MHz, 38 W AVG.,

Contextual Info: Freescale Semiconductor Technical Data MRF5S21150H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21150HR3 MRF5S21150HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L