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    100A101KP Search Results

    100A101KP Datasheets (2)

    American Technical Ceramics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    100A101KP150XT
    American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF 378.99KB
    100A101KP150XT1K
    American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF 1.17MB
    SF Impression Pixel

    100A101KP Price and Stock

    Kyocera AVX Components

    Kyocera AVX Components 100A101KP50XT \\E

    MLC A/B/R - Tape and Reel (Alt: 100A101KP50XT \\E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100A101KP50XT \\E Tape & Reel 40 Weeks 100
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    Kyocera AVX Components 100A101KP50XC100 \\E

    MLC A/B/R - Waffle Pack (Alt: 100A101KP50XC100 \\E)
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    Avnet Americas 100A101KP50XC100 \\E Waffle Pack 40 Weeks 100
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    Kyocera AVX Components 100A101KP150XT1K

    MLC A/B/R - Custom Tape W/Leader (Alt: 100A101KP150XT1K)
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    Avnet Americas 100A101KP150XT1K Tape w/Leader 16 Weeks 1,000
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    Mouser Electronics 100A101KP150XT1K
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    Kyocera AVX Components 100A101KP150XC100

    MLC A/B/R - Waffle Pack (Alt: 100A101KP150XC100)
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    Avnet Americas 100A101KP150XC100 Waffle Pack 16 Weeks 100
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    Mouser Electronics 100A101KP150XC100
    • 1 $5.91
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    Kyocera AVX Components 100A101KP150XT

    MLC A/B/R - Custom Tape W/Leader (Alt: 100A101KP150XT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100A101KP150XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100A101KP150XT
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    TTI 100A101KP150XT Reel 500
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    100A101KP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


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    33-asmx0912b250yg04b34bt-33-+5711dfl2b004b3520qmb43iec134015 capacitor philips PDF

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


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    lle18150xepsilam 10by239bdt91+3sc15erie 1250-003diode by239 PDF

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    m3d159lle18010xsca63125002/00/02/pp12+6philips ferrite 4330-030philips ferrite 4b1transistor 648by239bdt91j160 capacitor philips PDF

    Contextual Info: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N


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    mz0912b100y PDF

    MF1011B900Y

    Abstract: SC15
    Contextual Info: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C


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    mf1011b900ymlc725ot448asc15 PDF

    NPN Silicon Epitaxial Planar Transistor

    Abstract: MZ0912B50Y TACAN
    Contextual Info: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting


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    mz0912b50ynpn silicon epitaxial planar transistortacan PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


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    mx0912b100ymz0912b100y PDF

    Transistor Equivalent list

    Abstract: J3 transistor by239 1500 100A101kp diode J3
    Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Tmb = 25 °C in a common emitter class AB


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    lfe15600xtransistor equivalent listj3 transistorby239 1500+2100a101kpdiode j3 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor


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    rx1214b170w7/00/02/pp12 PDF

    Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, 10% duty factor MX1011B200Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C


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    100a101kp50xlc467x1011b200y PDF

    Contextual Info: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


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    mx0912b100yot439a100a101kp50xmz0912b100y+1mgk067 PDF

    gk06

    Abstract: microwave transistor S- parameter GK066
    Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


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    ot439a100a101kp50xmx0912b251ygk066+2gk06microwave transistor s- parameter PDF

    MX0912B100Y

    Abstract: MZ0912B100Y philips capacitor 470
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


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    mx0912b100ymz0912b100ysca53127147/00/02/pp12+1philips capacitor 470 PDF

    BDT91

    Abstract: BY239 LLE15370X
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    lle15370xsca53127147/00/02/pp12bdt91+1by239 PDF

    Contextual Info: KFM RF9936 MICRO •DEVICES PCS LOW NOISE AMPLIFIER/MIXER Typical Applications • CDMA/TDMA/DCS1900 PCS Systems General Purpose Down Converter • PHS 1500/WLAN 2400 Systems Micro-Cell PCS Base Stations • Receivers Employing Diversity Antennas Portable Battery Powered Equipment


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    rf9936cdma/tdma/dcs19001500/wlan100a3r9cp150x+5100a102jp150xpss100-3c616db-1078f6ce-1g9600-l2xb993s411 PDF

    Contextual Info: Philips Components DISCRETE SEMICONDUCTORS Data sheet statue Prelim inary sped location date of lesua July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency.


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    mx0912b350y00351mb PDF

    MCA680

    Abstract: electrolytic capacitor 470 transistor Zo 105 NPN Silicon Epitaxial Planar Transistor IEC134 MZ0912B50Y transistor Common Base amplifier
    Contextual Info: MZ0912B50Y Data sheet status Preliminary specification data of Issue July 1990 NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting


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    mz0912b50ym90-1193/ymca680electrolytic capacitor 470+4transistor zo 105npn silicon epitaxial planar transistoriec134transistor common base amplifier PDF

    diode BY239

    Abstract: Transistor Equivalent list mbab Transistor AND DIODE Equivalent list BY239 fo231 100A101kp FO-231 NPN Silicon Epitaxial Planar Transistor A376
    Contextual Info: Philips Semiconductors Product specification NPN silicon planar epitaxial microwave power transistor LFE18500X FEA TUR ES Q U IC K R E F E R E N C E DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V SW R


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    lfe18500x7110fl5b0dt4307fo-231+10711002bdiode by239transistor equivalent listmbabtransistor and diode equivalent listby239fo231100a101kpnpn silicon epitaxial planar transistora376 PDF

    erie 1500 z

    Abstract: BDT91 BY239 LFE15600X SC15 by239 1500
    Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR amplifier. • Interdigitated structure provides


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    lfe15600xerie 1500 zbdt91by239+2sc15by239 1500 PDF

    epsilam 10

    Abstract: BDT91 BY239 LFE15600X
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    lfe15600xsca53127147/00/02/pp12epsilam 10+2bdt91by239 PDF

    LLE16350X

    Abstract: BDT91 BY239
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE16350X NPN microwave power transistor Product specification Supersedes data of September 1994 1997 Feb 03 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


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    lle16350xsca53127121/00/04/pp12bdt91+1by239 PDF

    MX0912B351Y

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A


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    mx0912b351yot439asca53127147/00/02/pp12 PDF

    MX0912B251Y

    Abstract: capacitor 470 uF
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A


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    mx0912b251yot439asca53127147/00/02/pp12+1capacitor 470 uf PDF

    bt 109 transistor

    Abstract: CD493 RA444
    Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 ns/10% • Internal input and output prematching networks allow an easier design of circuits • Diffused emitter ballasting resistors


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    ns/10mx1011b700ycd493bt 109 transistor+1ra444 PDF