BDT91
Abstract: BY239 LLE15370X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors
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Transistor AND DIODE Equivalent list
Abstract: 100A101kp
Contextual Info: Philips Semiconductors Product specification LLE15370X NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency
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Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
Contextual Info: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR
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PCA1318P
Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
Contextual Info: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product
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LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
Contextual Info: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50
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diode BY239
Abstract: Transistor Equivalent list BY239 Transistor AND DIODE Equivalent list philips ferrite 4b1 erie 1250-003 copper permittivity BDT91 LLE15370X SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEA TU R ES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high V S W R • Interdigitated structure provides high emitter efficiency
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