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gk06 Abstract: microwave transistor S- parameter GK066 Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR	OCR Scan	ot439a 100a101kp50x mx0912b251y gk066 +2gk06 microwave transistor s- parameter	PDF

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gk06

Abstract: microwave transistor S- parameter GK066
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

OCR Scan

ot439a 100a101kp50x mx0912b251y gk066 +2

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