100A101KP50X Search Results

MX0912B250Y

Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

Contextual Info: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N

MF1011B900Y

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C

NPN Silicon Epitaxial Planar Transistor

Abstract: MZ0912B50Y TACAN
Contextual Info: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y

Contextual Info: DISCRETE SEMICONDUCTORS RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors 1997 Feb 18 PHILIPS Philips Semiconductors Product specification Microwave power transistor

Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, 10% duty factor MX1011B200Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

gk06

Abstract: microwave transistor S- parameter GK066
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

MX0912B100Y

Abstract: MZ0912B100Y philips capacitor 470
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y

Contextual Info: Philips Components DISCRETE SEMICONDUCTORS Data sheet statue Prelim inary sped location date of lesua July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency.

MCA680

Abstract: electrolytic capacitor 470 transistor Zo 105 NPN Silicon Epitaxial Planar Transistor IEC134 MZ0912B50Y transistor Common Base amplifier
Contextual Info: MZ0912B50Y Data sheet status Preliminary specification data of Issue July 1990 NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high em itter efficiency. • D iffused em itter ballasting

MX0912B351Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A

MX0912B251Y

Abstract: capacitor 470 uF
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A

RX1214B170W

Abstract: 100A101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B170W Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium

Contextual Info: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency

JH transistor

Abstract: MX0912B251Y SC15 Philips electrolytic screw
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

HCW51

Abstract: MX0912B350Y D0310 IEC134
Contextual Info: DISCRETE SEMICONDUCTORS Data shMt a «tatù* Preliminary spedfcation date of Issus July 1990 MX0912B350Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused em itter ballasting

transistor 359 AJ

Contextual Info: DISCRETE SEMICONDUCTORS DAT MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency

740C3

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y

microwave transistor S- parameter

Contextual Info: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, duty factor 10% • Diffused emitter ballasting resistors improve ruggedness MFt 011B900Y QUICK REFERENCE DATA

philips capacitor 470

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MZ0912B50Y FEATURES QUICK REFERENCE DATA • Interdigitated structure provides high emitter efficiency Microwave performance up to T mb = 25 °C in a common base class C broadband amplifier.

GL-056

Abstract: sot439
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B351Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

MF1011B900Y

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium