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    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


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    mx0912b100ymz0912b100y PDF

    Contextual Info: Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


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    mx0912b100yot439a100a101kp50xmz0912b100y+1mgk067 PDF

    MX0912B100Y

    Abstract: MZ0912B100Y philips capacitor 470
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


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    mx0912b100ymz0912b100ysca53127147/00/02/pp12+1philips capacitor 470 PDF

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    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y


    Original
    mx0912b100ymz0912b100yot439ot443+1740c3 PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DAT MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES


    Original
    mx0912b100ymz0912b100ysca53127147/00/02/pp12 PDF