1004J Search Results

Contextual Info: MICRON SEMICONDUCTOR IN C b? E D • blllSMH OGG'iflba 217 M M R N PRELIMINARY MICRON I M T4LC 1004J S 4M E Gx1 D R A M sevicoNSucroa inc . DRAM 4 MEG x 1 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Single +3.3V ±0.3V pow er supply • 1,024-cyd e refresh distributed across 16ms

mt4c1004j

Abstract: 4C1004 4c1004j
Contextual Info: 1004J L 4 MEG X 1 DRAM |u iic = n o N DRAM 4 MEG x 1 DRAM 5V, FAST PAGE MODE, OPTIONAL EXTENDED REFRESH FEATURES • 1,024-cy cie refresh d istrib u ted a cro ss 16m s (M T 4C 1004J) o r 128m s (M T 4C 1004J L only) • In d u stry-stan d ard p in o u t, tim ing , fu n ctio n s and

Contextual Info: M ’ I C R O N 1 MEG X 1 FPM D R A M DRAM M T4C 1004J FEATURES • 1,024-cycle refresh distributed across 16ms M 1004J or 128ms (M 1004J L only) • Industry-standard pinout, tim ing, functions and packages • High-perform ance CM OS silicon-gate process

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

2sk to-92

Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
Contextual Info: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)

1004J

Abstract: 2N6659 M 1004j
Contextual Info: Tem ic 2N6659/2N6660, 1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1

Contextual Info: MICRON 4 MEG X MT9D49 9 DRAM MODULE 4FAST MEG x 9 DRAM PAGE MODE (MT9D49 □PAM . _ MODULE m V U U L L . _ _ ^ LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS o Vcc CAS DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8

Contextual Info: MICRON T E C H N O L O G Y INC 5SE J> • b l l l S M T 00041*10 fc.03 ■ MRN 1004J 4 MEG X 1 DRAM MICRON DRAM 4 MEG X 1 DRAM DRAM FAST PAGE MODE FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process

Contextual Info: S2D2モジュール 光源 L10671D, L10671P, L10671H 概要 S2D2ランプ（小型重水素ランプ）は従来品に比べ 大幅に小型化を実現した点光源D2ランプです。 小型でありながら従来品と同等の高安定性を有し

Contextual Info: ADVANCE MICRON 1 8 MEG DRAM MODULE X 36, 16 MEG X MT24D836 18 DRAM MODULE 8 MEG X 36,16 MEG x18 FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process • Single 5V ±10% power supply

Contextual Info: 1004J S 4 MEG X 1 DRAM MICRON • SEMCONOUCTOR. INC 4 MEG X 1 DRAM DRAM STANDARD OR SELF REFRESH Zl > FEATURES • 1,024-cycle refresh distributed across 16ms (1004J) o r 128ms (1004J S only) • Industry-standard pinout, timing, functions and

Contextual Info: MICRON SEMICONDUCTOR INC b3E T> M IC R O N • b l l lS 4tì QD07'ìR0 3 m 4 MEG «URN MT9D49 9 DRAM MODULE X 4 MEG X 9 DRAM DRAM MODULE FAST-PAGE-MODE (MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line

Contextual Info: MICRON TECHNOLOGY I NC ADVANCE I M IC R O N MT12D436 4 MEG X 36, 8 MEG x 18 DRAM MODULE SSE D • b i l l 5 4 =5 0 0 0 ^ 2 ^ 4Ô3 ■ URN _ 4 MEG x 36, 8 MEG x 18 FAST PAGE MODE FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process

Contextual Info: I^IICRON 4 MEG DRAM MODULE 4 MEG X X MT9D49 9 DRAM MODULE 9 DRAM FAST-PAGE-MODE MT9D49 LOW POWER, EXTEDEND REFRESH (MT9D49 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

MOSFET 2n6659

Abstract: 2N6660 SILICONIX
Contextual Info: 2N6659/2N6660, 1004J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS 2N6659 Min (V) 2N 6660 60 VQiOOU/P Max (Q) V GS(th) (V ) Id (A) 1.8 @ V Gs = 10 V 0.8 to 2 1.4 3 @ V GS= 10 V 0.8 to 2 1.1 3.5 @ V GS= 10 V 0.8 to 2.5

Contextual Info: ASD 1004J 883C 4 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. DRAM 4 MEG X 1 DRAM FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATONS PIN ASSIGNMENT Top View • SMD 5962-90622 • MIL-STD-883 18-Pin DIP FEATURES • Industry standard x l pinout, timing, functions and

Contextual Info: MICRON SEMICONDUCTOR INC b3E T> • b 111S 4 =1 DDG7Sbñ 271 B U R N 1004J L 4 MEG X 1 DRAM MICRON 4 MEG x 1 DRAM DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (1004J) or 128ms (1004J L only)

1004J

Contextual Info: M 1004J L 4 MEG X 1 DRAM DRAM 4 MEG X 1 DRAM LOW POWER, EXTENDED REFRESH FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • All inputs, outputs and clocks are fully TTL

Contextual Info: PRELIMINARY |U |C R O N IEG DRAM MODULE MT24D836 X 36, 16 MEG x 18 DRAM M OD ULE 8 MEG x 36,16 MEG x18 FAST PAGE MODE FEATURES • Industry-standard pinout in a 72-pin single-in-line package • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply