0S35 Search Results

Contextual Info: SYN ER G Y HEX D F L I P - R OP rim 0S35i S E M IC O N D U C TO R DESCRIPTION FEATURES • Max. toggle frequency of 700MHz ■ Clock to Q max. of 1200ps ■ Ie e min. of -98mA ■ Industry standard 100K ECL levels ■ Extended supply voltage option: V ee = -4.2V to -5.5V

intel 80c196 INSTRUCTION SET

Abstract: intel 80c196 opcode sheet intel 8096 assembly language 1NT09 80C196 assembly language 80C196KA 80C196 instruction set Intel 80c196 Packaging Information 270428 0s35
Contextual Info: -ii ^ 7 c Ö R r « i P R C S / P R P HI-> li 482617 5 Í É | 4sat,i75 o a b o s a v m f Í N t É L C 0 R P M Í P R C S / PRPHl V : , . . . ‘ 99D . J . 60527 M O D G » » T - V 7 - / 9-/6 80C196KA 16-BIT HIGH PERFORMANCE CHMOS MICROCONTROLLER Full Duplex Serial Port

Contextual Info: SIEMENS BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 Vds 500 V b 2.4 A RoSlon 3 Cl Package Ordering Code TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

Contextual Info: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!

SIEMENS tle 420

Contextual Info: SIEMENS 3-A DC Motor Driver TLE 5204 Overview SPT IC 1 Features • • • • • • • Output current ± 3 A I/O error diagnostics Short-circuit proof Four-quadrant operation Integrated free-wheeling diodes Wide temperature range Break low and break high, if open load detection is

3904

Contextual Info: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration

s43a

Contextual Info: SIEMENS 8M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE HYM 328020G D-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 90 ns cycle time -50 version 60 ns access time 110 ns cycle time (-60 version)

Contextual Info: SIEMENS BUZ 51 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 Type Vbs b f l DS on Package Ordering Code BUZ 51 1000 V 3.4 A 4 Q TO-220 AB C67078-S1344-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5

Contextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)

Contextual Info: 053Sfc.0S 0030337 ê SIEG Selection Guide SIEMENS AKT IENGESELLSCHAF 47E D EMI suppression chokes l-core chokes Rated inductance per winding Rated Type Rated voltage Double current per Single choke winding choke 500 Vac 20 nH to B82504 1 to 25 A 65 |iH to

Contextual Info: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

3A/itas 3-415

Contextual Info: SIEMENS IRM3401/3402/3405/3415 Infrared Data Transceiver Preliminary IRM340S IRM3401 FEATURES • Meets All Applicable IrDA Specifications • IrDA Data Rates Up to 4.0 Mb/s • Wide Dynamic Range • Differential PIN Diode Input for Superior Interference Rejection

Contextual Info: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control

Contextual Info: SIEMENS BUZ 346 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode vvoyss ' fé i • Avalanche-rated Pin 1 Pin 2 G Type B U Z 346 Vbs 50 V b 58 A flDS on 0.018 n Pin 3 D S Package Ordering Code TO-218AA C67078-S3120-A2 Maximum Ratings

MOR56

Abstract: mot schematic M0P41 compal m0r11 AM251S EL 817 c321 SS145 SS97 ss129
Contextual Info: Model Name: N20U PCB No: LA542 Revision: 1A Model Name: N20U2 PCB No: LA542 Revision:3A N20U BLOCK DIA GRAM CPU DECOUPING PULL UP/FDOW N GEYSERVILLE Coppermine Geyserville uBGA2/uPGA2 CPU CLOCK ICS9248-92 PAGE 11 PAGES PAGE 3,4 LCD & CRT PC I/ISA PULL UP/DOWN

Contextual Info: SIEM ENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2165 CMOS 1C Preliminary Data 1.1 Features • Applications in digital terminal equipment featuring voice functions • Digital signal processing performs all CO D EC functions

Contextual Info: SIEMENS C16x-Family of High-Performance CMOS 16-Bit Microcontrollers SAB 88C166 W Preliminary SAB 88C166(W) 16-Bit Microcontrollers with 32 KByte Flash EPROM • • • • • • • • • • • • • • • • • • • • • High Performance 16-bit CPU with 4-Stage Pipeline

m43of

Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version

NEOSId 2.2k

Abstract: NEOSID 22k
Contextual Info: Page 1 FS: 04/93 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition Last Edition: Page 11: Page 12: DOK-Nr. V66047-S1603-C200-G1 date: 11.12.97 #P7: Test values and units changed #P8: Test values and units changed #P11: Test values changed, wrong values in previous version

transistor kp 303

Abstract: KP303A Datenblattsammlung VEB mikroelektronik mikroelektronik datenblattsammlung mikroelektronik DDR D818G KP307A Thyristor T6N KP303D
Contextual Info: In n lD ÍN S r ^ e l e k t r o n l k - B a u e l e m e n t e Mir I r dei Dienstgebrauch !ä SS fil I f ! DATENBLATTSAMMUJNG :Jjj§ •■tai elektronische bauelem ente ìm m ttí H : ■ 51 52 mm i l 11 iS Mm L Â | B « : i ms 1 -% 11 ■IP & 1'86 Die vorliegenden Datenblatt®r d i e n m nur zojp Information« Sie

siemens transformator

Abstract: TDA4605 tda4605 smps circuit diagrams Siemens transformer input 230 va output 15 -v monitor smps circuit diagram 12v 6A flyback siemens transformer 12 pin impulse generator siemens t1 transducer
Contextual Info: SIEMENS Control IC for Switched-Mode Power Supplies using MOS-Transistors TDA 4605 Bipolar IC Features • Fold-back characteristic provides overload protection for external components • Burst operation under short-circuit conditions • Loop error protection

Contextual Info: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

SIEMENS BST 68

Abstract: SIEMENS BST 68 L
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code