0S35B05 Search Results

Contextual Info: 053Sfc.0S 0030337 ê SIEG Selection Guide SIEMENS AKT IENGESELLSCHAF 47E D EMI suppression chokes l-core chokes Rated inductance per winding Rated Type Rated voltage Double current per Single choke winding choke 500 Vac 20 nH to B82504 1 to 25 A 65 |iH to

Contextual Info: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control

m43of

Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version

NEOSId 2.2k

Abstract: NEOSID 22k
Contextual Info: Page 1 FS: 04/93 SIEMENS AG IC-SPECIFICATION TDA 4362 X Differences to the last edition Last Edition: Page 11: Page 12: DOK-Nr. V66047-S1603-C200-G1 date: 11.12.97 #P7: Test values and units changed #P8: Test values and units changed #P11: Test values changed, wrong values in previous version

Contextual Info: SIEMENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Contextual Info: • a b a s t o s oo'ia?'^ s t i ■ SIEMENS PRÜFET BTS 442 D2 Smart Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown * Overvoltage protection including load dump * Fast demagnetization of Inductive loads

Contextual Info: SIEMENS BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type BB 535 Marking Ordering Code white S Q62702-B580 , Pin Configuration 1 =C Package 2 =A SOD-323 Maximum Ratings Parameter

SQT-89

Abstract: BUZ100SL E3045 Q67040-S4000-A2 smd code book la tube smd diode 27 5j Diode smd 5j
Contextual Info: BUZ 100SL Inf ineon technologie» SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vfos • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ñ DS on 0.012 a 70 A b 55 V • Logic Level

Contextual Info: S IE M E N S BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2 G H z at collector currents from 0.5mA to 20mA E S P: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code