KJE transistor
Abstract: KJE 17 transistor NT 101 transistor AC151 AC151 transistor kje KJE ZO transistor ac 151 k 151 transistor Q60103-X151-F1
Contextual Info: 2SC D • fi235bQS 0004035 ISIE6 AC 151 AC 151 r PNP Germanium Transistors SIEMENS AKTIENGESELLSCHAF C 04035 T- 0 9 - U Not for new design for AF input and driver stages of medium performance AC 151 and AC 151 r are alloyed germanium PNP transistors in 1A 3 DIN 41871 case
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0235bosq60103-x151-dq60103-x151-d1q60103-x151-e+14q60103-x151-e1q60103-x151-fq60103-x151-f1q60103-x151-gq62901-b1ac151kje transistorkje 17 transistornt 101transistor ac151transistor kjekje zotransistor ac 151k 151 transistor
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Contextual Info: SIEMENS AKTIENÖESELLSCHAF 4?E ì> fi235b05 00220S3 E BISIE6 B SI EMENS Microcomputer Components SAB-R2000A 32 Bit RISC Processor 'V9-/7-38 Esaíurgsi RISC integer CPU Load /store architecture Full 32 bit operation 32 general purpose registers 32 bits wide
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fi235b0500220s3sab-r2000av9-/7-38+30025qs4c-pga-144sab-r2010a
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ix 3368
Contextual Info: LOE D • fi235bDS DD5020J 752 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T '< ¿ > 5 - 's Dimmer IC SLB 0586 CMOS 1C Features • Sensor operation - no mechanically moved switching elements • Operation is also possible from several extensions by means of sensors or push buttons
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fi235bdsdd5020jix 3368 |
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ES0406
Abstract: r00nF A6151 TDA615 6151X sc 6700
Contextual Info: bSE D • fi235bD5 0 0 5 3 7 ^ 7T4 « S I E G SIEM EN S_ _ SIEMENS AKTIENGES ELLS CHAF S a t e l l i t e - V i d e o IC TDA6151X Bipolar 1C Preliminary Data Features • G a in adjustable for different FM -deviations • V id e o buffer and sp ecial baseband output for the sound
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fi235bd5tda6151xues04073es0406+5r00nfa6151tda6156151xsc 6700
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bfw 106 c
Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Contextual Info: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for
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fi235bq5q0047esq62702-f31923sbos+500q4727bfw16bfw 106 ctransistor bfw 10bfw16a
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transistor BD 110
Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
Contextual Info: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal
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fl235bq5q62702-d905q62902-b63q62902-b62+3transistor bd 1100437transistor bd 524
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TRANSISTOR b 772 p
Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Contextual Info: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for
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fi235bqsq62702-f319c--1223sbqs+6q0qm727bfw16atransistor b 772 pbfw 16 transistorbfw 72transistor bfw 16
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transistor D 1557
Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly
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fi235bosgg04q2701-f88transistor d 1557+61557 b transistorf88 diodetransistor ic 1557 btransistor 1557 baf280germanium power
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smd transistor AFQ 36
Abstract: P-TQ220-5-1 transistor c160 type TLE4270 smd transistor 7D QK55 TRANSISTOR T0220 AEP01922 AEP02172 Q67000-A9209
Contextual Info: fi235bD5 O O l b b l ? ATT S IEM EN S T L E 427 0 5-V Low -D ro p Fixed V o ltage R egulator Features Output voltage tolerance < ± 2 % Low-drop voltage Integrated overtemperature protection Reverse polarity protection Input voltage up to 42 V Overvoltage protection up to 65 V < 400 ms
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fi235b05q67000-a9209p-tq220-5-1q67000-a9243+13p-t0220-5-2q67006-a9201p-tq220-5-80235bosp-t0220-5-8smd transistor afq 36transistor c160type tle4270smd transistor 7dqk55transistor t0220aep01922aep02172
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7B1 zener diode
Abstract: BTS621L1 BTC621L1 5C smd BTS621 kst v2 OFL-12 171E 17DM GPT051B7
Contextual Info: • fi235b05 □□ai?D3 7B1 m SIEM EN S BTS621L1 Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • Load dump and reverse battery protection1 Product Summary Clamp of negative voltage at output H o a d dump Short-circuit protection
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fi235b05bts621l1tq-220ab/7q67060-s6304-a2+11gpt051b7220ab/7e32307b1 zener diodebtc621l15c smdbts621kst v2ofl-12171e17dm
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transistor d 1557
Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
Contextual Info: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly
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fl235bqs0dq4q81t0119q62701-f88+9transistor d 1557transistor 1558transistor ic 1557 bgermanium transistor ac 128ml 1557 b transistor1557 b transistoraf280900 mhz germanium diodeaf 280 s
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siemens sab 82532
Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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crc-32235b0582532n-1000702fl2+10siemens sab 8253282258sa 82532sab 80286csc 2323sab80286stt 3 siemens80286 microprocessor pin out diagramescc2siemens sab 82525
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SIEMENS BST
Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Contextual Info: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature
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16-bit3164165at3165165at3166165at+11fie3sb05a712ssiemens bstsiemens 230 96siemens bst psmd 42tmas 10 rcdsiemens bst h 05 60siemens bst g 02 60hpc16siemens bst n 35
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stm siemens
Abstract: t02 eeprom SIEMENS 24C164 interfacing sla 24c164 Q67100-H3498 Q67100-H3499 Q67100-H3502 Q67100-H3503 Q67100-H3504 24c164p
Contextual Info: • ûzasbos D c m o is stm SIEMENS 16 K b it 2048 x 8 b it S e ria l C M O S E E P R O M s, I 2C S y n c h ro n o u s 2 -W ire B u s , P age P ro te c tio n Mode S L x 24C 164/P Preliminary Features • Data EEPROM internally organized as 2048 bytes and 128 pages x 16 bytes
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24c164/p35b05ied02127023sbds+10stm siemenst02 eepromsiemens 24c164interfacing sla 24c164q67100-h3498q67100-h3499q67100-h3502q67100-h3503q67100-h350424c164p
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smd transistor 2gu
Abstract: smd 5b1 5B1 zener diode smd transistor 5B1 smd diode hn 5B1 package SMD smd TRANSISTOR code AJ e3062a SMD DIODE 517 BTS442D2
Contextual Info: • □0^27^5 aP3SbGS SIEM ENS ST1 ■ PROFET BTS 442 D2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • Overload protection
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capac05-a2o-220ab/5e3043q67060-s6205-a3+13o-22qab/5e3062bts442d2e3062aq67060-s6205-a4smd transistor 2gusmd 5b15b1 zener diodesmd transistor 5b1smd diode hn5b1 package smdsmd transistor code ajsmd diode 517
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eeprom 24C16 5 pin
Abstract: 24C16-S 24C08 CHIP 8-PIN 24c16 24c16 EEPROM 24c16 wp DATA SHEET 24C16 24c08 wp 24C16 application Q67100-H3226
Contextual Info: • ÔE35h05 □□TûflTfl h3S ■ S IE M E N S 8/16 K bit 1024/2048 x 8 bit Serial C M O S EE P R O M s, I 2C Synchro n o us 2-W ire Bus S L x 2 4C 08 /1 6 Preliminary Features I • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages x 16 bytes
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24c08/16235b05eeprom 24c16 5 pin24c16-s+824c08chip 8-pin 24c1624c16 eeprom24c16 wpdata sheet 24c1624c08 wp24c16 applicationq67100-h3226
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Q67006-A9171
Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
Contextual Info: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible
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tle4921-3u4921-3uq67006-a917123sbqs+823sb0shall current sensor 3aaep01694siemens magnetic sensorssiemens hallaea01259aed01707aed01709
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marking code C1H SMD
Abstract: sab-c501-l24p
Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)
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16-bitp-dip-40p-lcc-44p-mqfp-44+8sab-c501saf-c501c501-l/c501-1r80c32/c5280c52fl235b05marking code c1h smdsab-c501-l24p
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Contextual Info: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith
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a235bos-33-5ss07holdfl235b05+600312bt-52-33-5582289-pq67020-y7782289-6-pq67120-y111
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Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,
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e35bd58-/16-bit16-bit16/8-bit+2fls35b05t-52-33-7g
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Contextual Info: SIEMENS SIPMOS Power Transistors • • BUZ 84 BUZ 84 A N channel Enhancement mode Type V ds Id BUZ 84 800 V BUZ 84 A 800 V Package 1> Ordering Code Tc ^OS on 5.3 A 25 "C 2.0 £2 TO-204 AA C67078-A1013-A2 6.0 A 29 "C 1.5 n TO-204 AA C67078-A1013-A3 Maximum Ratings
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o-204c67078-a1013-a2c67078-a1013-a323slg5+300bfl031fl23sbosgdbfi032
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Contextual Info: bOE D I fl235b05 QD5G42Ô 7b7 SIEMENS S IC K N S ISIEG A K 7 -iE N 6 e LLSC H AF Dual Power Operational Amplifier TCA 2465 Bipolar 1C Features • High output peak current of twice 2.5 A • Twice 2.0 A output peak current for TCA 2465 G • Large supply voltage range up to 42 V
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fl235b05qd5g42p-dip-16q67000-a8109+4q67000-a8110q67000-a8334p-dso-20-1235bg5
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U1615
Contextual Info: SIEMENS TDA 6612-5 TV-Stereo-Sound Bipolar IC Preliminary Data Features The TDA 6612-5 represents a complete TV-stereo system controlled by the I2C Bus according to German TV-Stereo standard. • All functions inclusive matrix adjustment are I2C Bus controlled
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q67000-a50235bosp-dso-28-1023sb05+1u1615
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Contextual Info: SIEMENS 2 M X 8-Bit Dynamic RAM 2 k-refresh HYB 5117800AJ-50/-60/-70/-80 Prelim inary Inform ation • • • • • • • • • • • • 2097152 words by 8-bit organization 0 to 70 'C operating temperature Fast access and cycle time RAS access time:
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5117800aj-50/-60/-70/-80235b05 |
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