0D2T Search Results

PH302B

Contextual Info: N E C ELECTRONICS INC 3QE D b457S2S 0D2TbG3 ñ r PHOTO D IO D E c P H 302B P L A ST IC M OLDED PIN PHOTO DIO DE D E S C R IP T IO N P A C K A G E D IM E N S IO N S P H 3 0 2 B is a photo diode with P IN structure. It has a wide U n it: m m photo-receiving area and high speed response enabling applica­

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve

Contextual Info: GEC P L E S S E Y S i S E M I C O N D U C T O R S DS4092-2.2 DG646BH25 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 2000A 2500V 867A •t AV dVj/dt 1000V/HS 300A/|iS d lp /d t ■ Variable speed A.C. motor drive inverters (VSD-AC). ■tcm V DRM ■ Uninterruptable Power Supplies

Contextual Info: an GEC PLESSEY JANUARY 1997 S E M I C O N D U C T O R S DS3112-3.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY Supersedes Septem ber 1993 edition - version 2 The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address

USS720

Contextual Info: Advance Data Sheet, Rev. 5 November 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations t a n t » — g U SS -7 2 0 In s ta n t U S B U S B - to - IE E E ' 1 2 8 4 B r id g e UNIVERSAL SERIAL BUS Features Software Features:

Contextual Info: P D - 9 .1 5 3 8 B International l R Rectifier IRL6903 HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description

2n3375

Abstract: 2n3375 transistor 2N3553
Contextual Info: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes

Contextual Info: AMPMODU .025 [0.64] Square Interconnection System Board-to-Board, Wire-to-Board Catalog 65816 Issued 5-95 Locking Clip Contacts and Housings Locking Clip Contacts and Housings Product Facts • Self-retaining contacts provide permanent connec­ tion with quick connect and

sis 486

Abstract: 7z97443
Contextual Info: N AMER hRE PHILIPS/DISCRETE D • □DE'ill? 211 I IAPX BLV90/SL J U H F POWER TRANSISTOR NPN silicon planar e p ita xia l tra n sisto r designed fo r use In m o b ile rad io tra n sm itte rs in the 90 0 M Hz band. Features: • d iffu se d e m itte r-b a lla stin g resistors fo r an o p tim u m te m p e ra tu re p ro file .

transistor itt 975

Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz

T20 96 diode

Abstract: BA318 BA316 BA317 0D2T xfsm IEC134
Contextual Info: b'IE ]> • ^ 5 3 ^ 3 1 0D2bl5b 2TT N AUER PHILIPS/DISCRETE IAPX BA316 BA317 BA318 10 V, 30 V and 50 V GENERAL PURPOSE DIODES Silicon p la n ar epitaxial diodes in DO-35 envelopes intended fo r g en e ral p u rp o se a p p li­

Contextual Info: P r o d u c t S pecification < £ S L O E Z 8 0 1 8 0 /Z 8 S 1 8 0 */Z 8 L1 8 0 * Z180 M ic r o p r o c e s s o r * p r e u m in a r y FEATURES • Z80180 Supports O perating Frequency to 10 MHz ■ Two UART Channels ■ Z8S180 Supports O perating Frequency to 33 MHz*

T700

Abstract: T700N T709N Scans-001487
Contextual Info: ûl T700N T709N Typenreihe/Type ränge T700N T709N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drmi U rrm Periodische Vorwärts-und Rückwärts-Spitzensperrspannung de I a □ S T 4 Eta 2000 Itrhsh Itavm Effektiver Durchlaßstrom

AEG T 408

Abstract: T408F 25CC T408 40f11 ALPS ugt aeg tt AEG T 178
Contextual Info: 0029426 A E G CORP ai DE I D D a c14Eb 0 0 0 5 ^ 0 3 5 | T408 F T409 F Typenreihe/Type range T408F T409F Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Udrm. Urrm P e rio d is c h e V o rw ä rts -u n d Maximum permissible values R ü c k w ä rts -S p itz e n s p e rrs p a n n u n g

KS57C2616

Abstract: LC5012 64 pin IC microcontroller LCD ic 555 timer 10 minute buzzer obo 112 KS57C2516
Contextual Info: KS57C261& 4-BIT CMOS Microcontroller ELECTRONICS „ J ^ , Product Specification OVERVIEW The KS57C2616 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core. With its up-to-896-dot LCD direct drive capability, flexible 8-bit and 16-bit timer/counters, and

2943666671

Abstract: fr014 l289 FR2 material data sheet BEAD, WOUND FERRITE, 2943666671 FRQ24 FRQ05 fr024 Video cvbs 656 act ddr2 he ntc
Contextual Info: ADVANCE INFORMA TION KS0123 Data Sheet MULTIMEDIA VIDEO DIGITAL VIDEO ENCODER The KS0123 multi-standard video encoder converts CCIR 656 8-bit multiplexed digital component video into analog baseband signals. It outputs composite video CVBS and S-Video simultaneously at three analog output pins.

96-Seg

Contextual Info: KS57C2408 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C2408 single-chip CMOS microcontroller is designed for very high performance using Samsung's newest 4-bit product development approach, SAM4 Samsung Arrangeable Microcontrollers . Its main features

FW100A9

Contextual Info: m i c r o e l e c t r o n i c s gr oup Datasheet September 1997 Lucent Technologies Beil Labs Innovations FW050A, FW100A, FW150A Power Modules: dc-dc Converters; 36 to 72 Vdc Input, 5 Vdc Output; 50 W to 150 W Features • Wide input range ■ High efficiency: 82% typical

Philips 2222 capacitor

Abstract: philips capacitor philips capacitor 2222
Contextual Info: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control

Contextual Info: Philips Semiconductors b b 5 3 ^ 3 1 0 Q2 T 211 7 fl 4 M A P X Product specification B L V 1 0 1 A /B L V 1 0 1 B U H F p o w e r tr a n s is to r s N AUER PHILIPS/DISCRETE FEATURES b'lE D QUICK REFERENCE DATA • High input and output impedances promote easy

qml-38535

Abstract: CDFP4-F16 GDIP1-T16 tg0-h
Contextual Info: REVISIONS LTR APPROVED DATE YR-MO-DA DESCRIPTION REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 10 1

Diode BAY 68

Abstract: diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY ODOT747 marking 69
Contextual Info: A E G CORP 17E D O D ETM Sb Q Q G TTH S □ • BAY 68 • BAY 69 TfiBLSiPiyiliiKIIKl electronic Creative TechnoSogies T-0Z-Q°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm Cathode Standard glass case 5 4 A 2 DIN 41880

Contextual Info: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

Contextual Info: GEC S i PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4315 -1.2 ITE15F12/ITE15C12 POWERLINE N-CHANNELIGBT WITH OPTIONAL ULTRAFAST DIODE The ITE15X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for