transistor A968
Abstract: a968 BLV101B JBC223 capacitor philips ll BLV101A 2222-581 L1-L10 philips e3 Philips MBB
Contextual Info: Philips Semiconductors M 00 ^ 3 106 PHILIPS INTERNATIONAL bSE D UHF power transistors FE A T U R E S • High input and output im pedances prom ote easy m atching BLV101A/BLV101B Q U IC K R E F E R E N C E DATA R F perform ance at T h = 2 5 °C in a com m on em itter test circuit. M o d e of
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3b310fiblv101a/blv101bot273blv101b+11mca973kca97transistor a968a968jbc223capacitor philips llblv101a2222-581l1-l10philips e3philips mbb
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BLV101B
Abstract: mca97 BLV101A Tekelec TE 10 75 TEKELEC te 360 Philips 2222-030 Philips 2222-581 101B L817
Contextual Info: Philips Semiconductors bbSBTBl G G E IS ll 70*4 APX Product specification BLV101A/BLV101B UHF power transistors 'N AI1ER P H I L I P S / D I S C R E T E FEATURES • High input and output impedances promote easy matching • Implanted ballast resistors for
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ot273blv101a/blv101bblv101bwcw71+9mca973mca97blv101atekelec te 10 75tekelec te 360philips 2222-030philips 2222-581101bl817
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2n59442n59452n59462n6082+162n60842n64392sc12572sc12582sc12592sc1605amrf648tpv31002sc2897macomtp3034sd1393tp3008tp9383transistor 2sc636mrf255 equivalent
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T119 A
Abstract: sot 122 SOT123 Package BLW78
Contextual Info: 63 RF/Microwave Devices Bipolar RF Transmitting Transistors SHF 900 - 960 MHz cont. Load Power (W) @ 900 MHz Power Gain (dB) @ 900 MHz Supply Voltage (V) 35* 50 50* 150(PEP)* 7* 8.5 8.1* 7.5* 24 26 26 26 Package Outline Load Power (W) @ 108 MHz Power Gain
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4-26vblv97ceblv101ablv101b+9blv948ot-171ot-273ot-262a22n3866t119 asot 122sot123 packageblw78
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2sc12572sc12582sc12592sc1605a+152sc17292sc18042sc18052sc19462sc1946a2sc19672sc6362sc635mhw820-1tp30082sc2897sd14772sc2652tp3034sd1470
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Contextual Info: Philips Semiconductors b b 5 3 ^ 3 1 0 Q2 T 211 7 fl 4 M A P X Product specification B L V 1 0 1 A /B L V 1 0 1 B U H F p o w e r tr a n s is to r s N AUER PHILIPS/DISCRETE FEATURES b'lE D QUICK REFERENCE DATA • High input and output impedances promote easy
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blv101bblv101ablv101a/blv101bmca974+18a451
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BLY32
Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors
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om3016om3026om925om975+14om976bfq231bfq231abfq251bly32blf278 108 amplifierphilips application blx15rf power amplifiersbgy55blw95blf543bfq43blw33blf177 108 amplifier
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Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistors FEATURES « High input and output impedances promote easy matching • Implanted ballast resistors for optimum temperature profile
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blv101a/blv101bblv101ablv101b |
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SD1446
Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Contextual Info: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31
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bgy916blf145blf175blf177+16blf242blf244blf245blf245bblf248blf278sd1446sd2910philips blx15blv36blw60cst cross referenceblw97sd4575blv103mx0912b350y
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BLV101A
Abstract: BLX94 BLV101B BLW91 BFR96S BFR96S equivalent rf bipolar transistor application notes philips BGY19 LLE18010X BLV99
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Line-ups RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Line-ups INTRODUCTION In this section, we present information on recommended circuit line-ups in the main RF power application areas.
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sc08blle18010xlle18040xlle18150x+11bgy1816lfe18500xblv101ablx94blv101bblw91bfr96sbfr96s equivalentrf bipolar transistor application notes philipsbgy19blv99
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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2SC635
Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
Contextual Info: POWER RF CROSS REFERENCE INDUSTRY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2sc12572sc12582sc12592sc1605a+152sc17292sc18042sc18052sc19462sc1946a2sc19672sc635mhw820-12sc636tp3008sd1393tp3034sd14702sc2897tp5051
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