08VCES Search Results

Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y blE D • 0257^0=1 0 0 0 0 0 5 4 bTI H A V P ■ r W /jA A dvanced pow er Te c h n o l o g y APT50GL60BN 600V 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

APT45GL100BN

Abstract: 10A fast Gate Turn-off Thyristor
Contextual Info: A D V A NC ED POWER TECHNOLOGY b lE OZSTSCm D OOOOèbb 310 HAVP A D V A N C ED PO W ER Te c h n o l o g y • APT45GL100BN 1000V 45A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol

50N6

Abstract: xs 004 a
Contextual Info: ADVANCED TECHNICAL INFORMATION v v IXGN 50N60BD3 HîPerFÂST K1BT with HiPerFRED CES ^C25 CE sat = 600 V • 75 A = 2.5 V Buck configuration Symbol B CM Test Conditions SOT-227B, miniBLOC T, = 25°C to 150°C 600 V T. = 25°C to 150°C; RGE = 1 MO 600

APT35G60BN

Abstract: APT35G50BN T3BIA
Contextual Info: ADVANCED POWER T EC H N O L O G Y • D S S V S G 1! O Q O O b S l 3*10 M A V P ■ jjp j A d v a n c e d W/Æ PO W ER ^ - 3 1 A I B Te c h n o l o g y ® APT35G60BN APT35G50BN 600V 500V 35A 35A POW ER MOS IV |GBT N - C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE

30n60

Abstract: 1XSH30N60A
Contextual Info: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V

Contextual Info: DIXYS High Voltage, Low VCE sat IGBT IXSH 45N120 VCES = 1200 V ^C25 = 75 A = 3V V CE(sat) Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 1200 V v CGR T.J = 25°C to 150°C; Roc „ = 1 MQ 1200

.24n50

Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Contextual Info: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C

50N60

Abstract: 50N50B IXGH50N50B IXGH50N60B
Contextual Info: Preliminary data V y ces HiPerFAST IGBT Symbol vCES vCGR VGES VGEM Maximum Ratings Test Conditions 500 600 V T,J =25°C to 150°C; RG„E = 1 500 600 V Continuous ±20 V Transient ±30 V 'cm Tc = 25°C, 1ms SSOA VSE = 15 V, TVJ = 125°C, RG= 10 a RBSOA

Contextual Info: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU

Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH17N100U1 IXGH17N100AU1 v CES ^C25 V * CE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions v CES v CGR v GES v’ Td =25°C to ^ = 25°C to 150°C; Maximum Ratings 150°C