050BSC Search Results

smc com20020

Abstract: HYC908S TID41 HYC9088 COM20020 CQM20020 RG62 C0M90C165 NID4
Contextual Info: STANDARD MICROSYSTEMS CORPORATION, 35 M a rcu s B lvd . H au p p au g e. NY 11788 516 273-3100 F a x (516) 231-6004 CO M 20020 COMPONENT PRODUCTS DIVISION ULANC Universal Local Area Network Controller o 24-Pin DIP or 28-Pin PLCC Package o Flexible M edia Inte rfa ce:

HY628400LL

Contextual Info: HY628400 Series • H Y U N D A 512Kx8bit CM OS SRAM I DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits C M O S S R A M organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub C M O S process technology

2n3817

Abstract: 2N3804 2N3800 2N3802 2N3812 2n3816 raytheon emitter pad 2N381 2N4942 raytheon npn
Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEON. ^AYTUFnin RAYTHEON J 0005557 S E M IC O N D U C T O R 94D 05527 Low Level, Low Noise D j - z - f - Z ' l H j g h G a j n A m p | j f ¡e r s Popular Types Description G eneral purpose a m p lifier for low level, low noise and high gain amplifier

2N3640

Abstract: 2N3304 2n4208 2N2409 2N4258 High Speed Switches 2n2894a 2N5910 sm 58 b transistors 2N2894
Contextual Info: RAYTHEON/ SEMICONDUCTOR hh ]> E |7 S ^ 7 3tD '- r - Product Specifications Small Signal Transistors Q O D Sm ? 5 7 - /S' G R PNP Raytheon Ultra High Speed Switches Description G R PNP Ultra high speed platinum doped silicon epitaxial PNP transistors useful for high speed

marking wf SOT89

Abstract: RQ SOT89
Contextual Info: ¿¡TOKO TK75050 SMART MOSFET DRIVER FEATURES APPLICATIONS • 20 ns Rise and Fall into 1000 pF ■ Driving of Power MOSFETs and IGBTs ■ 800 |iA Stand-by Current Consumption ■ Switch Mode Power Supplies ■ Under Voltage Lockout Combined with First Pulse

2N2937

Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
Contextual Info: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low

amplifier CV 203

Abstract: 2N2708 2n3424 2N3423 2N918 JAN 2n917 die raytheon npn 0100BSC 254BSC 2n2857
Contextual Info: RA YTHEON/ SE MI CO NDUCT OR 75 97360 RAYTHEON» SEMICON DU CT OR hi ]>F| 75T73bD ODDSDfli 66C 05081 D T~- 3 l~ O Product Specifications Small Signal V NPN Raytheon Ultra High Frequency Oscillator and

clc409aje

Abstract: clc409aje COM LINEAR
Contextual Info: c CLC409 APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • • flash A/D driver D/A transimpedance buffer wide dynamic range IF amp radar/communication receivers DDS post-amps wideband inverting summer line driver 350MHz small signal bandwidth

Contextual Info: RAYTHEON/ SEMICONDUCTOR 33E D • 7S^73t,Q □□07471 1 B f R T N Product Specifications Sm all S ign a l Transistors C B NPN R a y tfe & o a i 1 7=-27-2 p * 7~-27-27 Medium Current General Purpose Amplifiers and Switches C B NPN Description General purpose medium power amplifier and

Contextual Info: RAY THE ON/ SEM IC O N D U C T OR 7597360 "TM RAYTHEON. D Ë J 75=1731.0 0005551 b SE M IC O N D U C T O R 94D Product Specifications Small Signal Transistors 0555 1 D 712S~-/3~ C J N PN Raytheon Ultra High Speed Switches CJ NPN Description High speed gold doped silicon epitaxial tran­

SP3467QDB

Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 RAYTHEO N. TSTYBbO OGOS SMH 7 SMALL SIGNAL TRANSISTORS p r o d u c t specificatio n s 7597360 d ÊTJ S E M IC O N D U C T O R 94D 05543 High Current, High Speed Switches D i-si-cs' Popular Types Description The GK is a platinum doped transistor.

MCM32CT400ASH60

Abstract: MCM32BT FPM RAM MCM32C400ASH60
Contextual Info: Order this document by 5VFPMU32S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 , 2 , 4 , 8 M X 3 2 5 V, FPM, Unbuffered DRAM Single-In-Line Memory Module SIMM 1M x 32 (4MB), 2M x 32 (8MB) 72-LEAD LOW HEIGHT SIMM 4, 8,16, and 32 Megabyte BACK • JEDEC-Standard 72-Lead Single-ln-Line Memory Module (SIMM)

tic 236 datasheet

Abstract: CM9318 01-82K
Contextual Info: CubicMOS Electronics Co,.Ltd. CubicMOS Dual High Output Power Operational Amplifier Product specification CM9318 Features . High Signal to Noise Ratio . High Slew . Low Distortion . Large Output Voltage Swing . Wide Temperature Range . Low Power Consumption

Contextual Info: STANDARD MICROSYSTEMS CORPORATION, 35 Marcus Blvd. Hauppauge. NY 11788 516 275-3100 Fax (516) 231-6004 C O M 2Q Q 2Q COMPONENT PRODUCTS DIVISION ULANC Universal Local Area Network Controller o 24-Pin DIP or 28-Pin PLCC Package o Flexible Media Interface:

operational amplifier application

Abstract: power operational amplifier
Contextual Info: CubicMOS Electronics Co,.Ltd. CubicMos Dual High Output Power Operational Amplifier Product specification CM9308 Features . High Signal -to Noise Ratio . High Slew . Low Distortion . Large Output Voltage Swing . Wide Temperature Range . Low Power Consumption

sp3725

Abstract: 2N3252 raytheon 2n
Contextual Info: RAYTHEON/ SEMICONDUCTOR T4 7597360 RAYTHEO N. D E | ? 5 c173t.D 0 0 0 5 5 3 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS S E M IC O N D U C T O R 94D 05535 High Current, High Speed Switches RAYTHEON D T -ss*-/ 7 Popular Types Description T he CK is a gold doped transistor

p181 4 pin

Abstract: J442 P181 G
Contextual Info: PACKAGE DIAGRAMS D48-1 48 pin Sidebraze 2 370 2.430 t .550 .610 * 2^~—' / ^eatingplane^ T ' ' ^ f - 4 022 J32-1 nnnnnnn19 18 17 16 15 ' 30 31 32 1 2 3 UUUUUUUf 045X45° - 450 ; 003 - - 490 i 005 - I , °590

Contextual Info: Comlinear Corporation ü Wideband, Low Distortion Dri ytfi-am ps APPLICATIONS: FEATURES: • • • • • • • • 120MHz bandwidth at +24dBm output • low distortion 2nd/3rd: -60/-62dBc ( a 20MHz and 10dBm • output short circuit protection • user-definable output impedance, gain,

2N3726

Abstract: 45-BSC JAN2N2905A 2n2907a raytheon 2N2004 2N2907AJ 2N3503 RAYTHEON SP2907AQD 2N721
Contextual Info: RAYTHEON/ SEMICONDUCTOR 7597360 RA YTH EO N . T4 I [f| 7 5 ^ 7 3 ^ 0 O D O S S D S 0 | ~ SEM ICO ND UCTOR 94D Product Specifications Small Signal Transistors 05505 D 7*- * 7 ~f 7 G B PNP Raytheon Medium Current General Purpose Amplifiers and Switches Description

Contextual Info: Comlinear Corporation Wideband, Low Distortion D r i \$ L - a m p s 1111 APPLICATIONS: • output amplification • arbitrary waveform generation • ATE systems • cable/line driving • function generators • SAW drivers • flash A /D driving and testing

5962

Abstract: 5962-9461110HTC 702 smd AS8S512K32 AS8S512K32A 5962-9461108HTA SRAM flatpack BQFP 100 PACKAGE AS8S512K3 9461110HM
Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 & 5962-95624 (Military Pinout)

5962-9458504H4C

Abstract: micross AS8E128K32 BYTE127 SMD AH
Contextual Info: EEPROM AS8E128K32 128K x 32 EEPROM PIN ASSIGNMENT EEPROM Memory Array Top View 66 Lead PGA AVAILABLE AS MILITARY SPECIFICATIONS • • (Pins 8, 21, 28, 39 are no connects on the PN package) SMD 5962-94585 MIL-STD-883 FEATURES OPTIONS • • 66 Lead PGA

MAX 8997

Abstract: ta 8268 SOP8,150mil, thermal cs 2648 MAX 8985 18945 18896 CM3541 8326 amplifier ta 8207 k
Contextual Info: Product specification CubicMOS Microelectronics Co,.Ltd. CubicMos Class AB Stereo Headphone Driver with Mute CM3541A The CM3541 is digital-source dual headphone amplifiers. The CM3541 has a fixed gain of 0dB and internal mute functions so that prevention of the popping source when power is turned

PBL 3708

Abstract: MSFM1-P3 MO-098 MO-144 MS-033 TO-276 MIL-STD-1835D MO-070 CMGA2-P100G GDFP1-G16
Contextual Info: INCH - POUND MIL-STD-1835D 1 June 2004 SUPERSEDING MIL-STD-1835C 15 August 2000 DEPARTMENT OF DEFENSE INTERFACE STANDARD ELECTRONIC COMPONENT CASE OUTLINES AMSC N/A FSC 5962 MIL-STD-1835D FOREWORD 1. This standard is approved for use by all Departments and Agencies of the Department of Defense DoD .