04MAY09 Search Results

AMP STK

Contextual Info: 107-68098 Packaging Specification 04May09 Rev L WHISTLER MOD JK 1. PURPOSE 目的 Define the packaging specification and packaging method of WHISTLER MOD JK products. 订定 WHISTLER MOD JK 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

BL-5C

Abstract: bl-5ct bl-4u elcon 1000 elcon 1650613-1
Contextual Info: 107-68573 Packaging Specification 04May09 Rev R HSG AND COVER FOR SALE TO ZHUHAI 1. PURPOSE 目的 Define the packaging specifiction and packaging method of HSG AND COVER FOR SALE TO ZHUHAI. 订定 HSG AND COVER FOR SALE TO ZHUHAI 产品之包装规格及包装方式。

1746798-1

Contextual Info: 107-68358 Packaging Specification 04May09 Rev M 2.5MM PITCH BATTERY CONN 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2.5MM PITCH BATTERY CONN. 订定 2.5MM PITCH BATTERY CONN 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

102x102-1

Contextual Info: 107-68334 Packaging Specification 04May09 Rev P 2HEADER ASSY SINGLE SLOT CARD BUS. 1. PURPOSE 目的 Define the packaging specifiction and packaging method of HEADER ASSY SINGLE SLOT CARD BUS. 订定 HEADER ASSY SINGLE SLOT CARD BUS 产品之包装规格及包装方式。

si410

Abstract: Si4104
Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested

intel drMOS 4.0

Abstract: marking 2x marking code D22 8 pin marking code D22 multiphase boost
Contextual Info: SiC778A Vishay Siliconix High Performance DrMOS – Integrated Power Stage DESCRIPTION FEATURES The SiC778 is an integrated power stage solution optimized for synchronous buck applications offering high current, high efficiency and high power density. Packaged in Vishay’s

Contextual Info: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested

Contextual Info: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/96/EC

SI3433BDV

Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si3424DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.028 at VGS = 10 V 6.7 0.038 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Contextual Info: Si4952DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.023 at VGS = 10 V 8 0.028 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

SI4920DY

Contextual Info: Si4920DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.025 at VGS = 10 V ± 6.9 0.035 at VGS = 4.5 V ± 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: Si4426DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.025 at VGS = 4.5 V ± 8.5 0.035 at VGS = 2.5 V ± 7.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

si3430

Contextual Info: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested

Contextual Info: SiC769 Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI

Contextual Info: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio

SI3430DV-T1-E3

Contextual Info: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.170 at VGS = 10 V 2.4 0.185 at VGS = 6.0 V 2.3 • Halogen-free According to IEC 61249-2-21 Definition • High-Efficiency PWM Optimized • 100 % Rg Tested

Contextual Info: Si4682DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ.) 11 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology

Contextual Info: Si3454ADV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.060 at VGS = 10 V 4.5 0.085 at VGS = 4.5 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si4952DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.023 at VGS = 10 V 8 0.028 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

150V Single N-Channel Power MOSFET TSOP-6

Abstract: si3440
Contextual Info: Si3440DV Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.375 at VGS = 10 V 1.5 0.400 at VGS = 6.0 V 1.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Fast Switching In Small

si4833a

Contextual Info: Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)a 0.072 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Power MOSFET

Si4114DY

Abstract: Si4114DY-T1-E3 Si4114DY-T1-GE3
Contextual Info: New Product Si4114DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a 0.006 at VGS = 10 V 20e 0.007 at VGS = 4.5 V 20e • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4684DY-T1-GE3

Abstract: Si4684DY Si4684DY-T1-E3
Contextual Info: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology