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    SI410 Search Results

    SI410 Datasheets (18)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI-41002
    Bel Fuse SI-41002 Scan PDF 225.18KB 3
    SI-41003
    Bel Fuse SI-41003 Scan PDF 334.06KB 4
    SI-41004
    Bel Fuse SI-41004 Scan PDF 291.5KB 4
    SI-41005
    Bel Fuse SI-41005 Scan PDF 322.64KB 4
    SI-41006
    Bel Fuse SI-41006 Scan PDF 290.23KB 4
    SI4100DY-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 6.8A 8-SOIC Original PDF 10
    SI4100DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 6.8A 8-SOIC Original PDF 10
    SI4101DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 25.7A 8SOIC Original PDF 10
    SI4102DY-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC Original PDF 10
    SI4102DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC Original PDF 10
    SI4103DY-T1-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 30V SO-8 Original PDF 174.72KB
    SI4104DY-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.6A 8-SOIC Original PDF 10
    SI4104DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.6A 8-SOIC Original PDF 10
    SI4108DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 20.5A 8-SOIC Original PDF 10
    SI-410-C1002
    Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SCREW GROMMET M3 THRMPL Original PDF 73.06KB
    SI-410-C6050
    Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SCREW GROMMET M3 THRMPL BLK Original PDF 73.06KB
    SI-410-C8002
    Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SCREW GROMMET M3 THRMPL BLU Original PDF 73.06KB
    SI-410-C8012
    Aearo Technologies Hardware, Fasteners, Accessories - Screw Grommets - SCREW GROMMET M3 THRMPL Original PDF 73.06KB
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    SI410 Price and Stock

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    Vishay Intertechnologies SI4100DY-T1-GE3

    Trans MOSFET N-CH 100V 6.8A 8-Pin SOIC N T/R
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    Verical SI4100DY-T1-GE3 207 12
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    Arrow Electronics SI4100DY-T1-GE3 Cut Strips 207 52 Weeks 1
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    SI4100DY-T1-GE3 Cut Tape 1
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    Vishay Intertechnologies SI4103DY-T1-GE3

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    SI4103DY-T1-GE3 Tape & Reel 12,731 100
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    SI4103DY-T1-GE3 Tape & Reel 5,000
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    Vishay Intertechnologies SI4101DY-T1-GE3

    - Tape and Reel (Alt: SI4101DY-T1-GE3)
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    Avnet Americas SI4101DY-T1-GE3 Tape & Reel 52 Weeks 2,500
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    Newark () SI4101DY-T1-GE3 Cut Tape 63 5
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    SI4101DY-T1-GE3 Tape & Reel 63 100
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    SI4101DY-T1-GE3 Tape & Reel 2,500
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    Power Integrations RLC-PSI-41-050-0

    Connection Cable for Railway Line Gate Driver - Bulk (Alt: RLC-PSI-41-050-0)
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    Avnet Americas RLC-PSI-41-050-0 Bulk 10
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    Vishay Intertechnologies SI4100DY-T1-E3

    - Tape and Reel (Alt: SI4100DY-T1-E3)
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    Avnet Americas SI4100DY-T1-E3 Tape & Reel 52 Weeks 2,500
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    Newark () SI4100DY-T1-E3 Cut Tape 1
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    SI4100DY-T1-E3 Tape & Reel 2,500
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    SI410 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    si410

    Abstract: Si4104
    Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original
    si4104dy2002/95/ecsi4104dy-t1-e3si4104dy-t1-ge3+42011/65/eu12-mar-12si410si4104 PDF

    Si4100DY

    Abstract: Si4100DY-T1-E3 Si4100DY-T1-GE3 si4100
    Contextual Info: Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original
    si4100dysi4100dy-t1-e3si4100dy-t1-ge311-mar-11+1si4100 PDF

    Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original
    si4104dy2002/95/ecsi4104dy-t1-e3si4104dy-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original
    si4100dysi4100dy-t1-e3si4100dy-t1-ge32011/65/eu+22002/95/ec12-mar-12 PDF

    Contextual Info: New Product Si4108DY Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original
    si4108dysi4108dy-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    SI4100DY

    Contextual Info: Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original
    si4100dysi4100dy-t1-e3si4100dy-t1-ge32011/65/eu+22002/95/ec12-mar-12 PDF

    Si4104

    Abstract: SI4104DY
    Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • TrenchET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT


    Original
    si4104dysi4104dy-t1-e318-jul-08si4104 PDF

    Contextual Info: New Product Si4100DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A)d 0.063 at VGS = 10 V 6.8 0.084 at VGS = 6 V 5.8 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 9 nC APPLICATIONS COMPLIANT


    Original
    si4100dysi4100dy-t1-e318-jul-08 PDF

    SI-4102

    Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original
    si4102dysi4102dy-t1-e3si4102dy-t1-ge311-mar-11+1si-4102 PDF

    Si4104

    Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original
    si4104dy2002/95/ecsi4104dy-t1-e3si4104dy-t1-ge3+211-mar-11si4104 PDF

    SI4108

    Abstract: Si4108DY Si4108DY-T1-GE3
    Contextual Info: New Product Si4108DY Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original
    si4108dysi4108dy-t1-ge308-apr-05si4108 PDF

    Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original
    si4102dysi4102dy-t1-e3si4102dy-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: SPICE Device Model Si4102DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si4102dy2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SPICE Device Model Si4101DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original
    si4101dy2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    SI-4102

    Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original
    si4102dysi4102dy-t1-e3si4102dy-t1-ge32011/65/eu+32002/95/ec12-mar-12si-4102 PDF

    SI-4102

    Abstract: AN609 Si4102DY 69297
    Contextual Info: Si4102DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si4102dyan60913-aug-07si-4102+169297 PDF

    Si4104DY

    Abstract: Si4104
    Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchET Power MOSFET • 100 % Rg Tested


    Original
    si4104dy2002/95/ecsi4104dy-t1-e3si4104dy-t1-ge3+218-jul-08si4104 PDF

    AN609

    Abstract: Si4100DY
    Contextual Info: Si4100DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si4100dyan60913-aug-07 PDF

    Si4104DY

    Abstract: si4104
    Contextual Info: New Product Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 100 0.105 at VGS = 10 V 4.6 8.5 nC • TrenchET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested RoHS COMPLIANT


    Original
    si4104dysi4104dy-t1-e308-apr-05si4104 PDF

    Si4102DY-T1-E3

    Abstract: SI-4102 si4102 Si4102DY RG370
    Contextual Info: New Product Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d rDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.6 nC APPLICATIONS


    Original
    si4102dysi4102dy-t1-e308-apr-05si-4102+2si4102rg370 PDF

    Contextual Info: New Product Si4101DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 • TrenchFET Power MOSFET RDS(on) () Max. ID (A)d 0.0060 at VGS = - 10 V - 25.7 0.0080 at VGS = - 4.5 V - 22.3 Qg (Typ.) • 100 % Rg and UIS Tested


    Original
    si4101dysi4101dy-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    SI4108

    Abstract: Si4108DY-T1-GE3 Si4108DY
    Contextual Info: New Product Si4108DY Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 75 0.0098 at VGS = 10 V 20.5 36 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS


    Original
    si4108dysi4108dy-t1-ge318-jul-08si4108 PDF

    C 8187

    Abstract: Si4104DY v447 Si4104
    Contextual Info: SPICE Device Model Si4104DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4104dy18-jul-08c 8187v447+1si4104 PDF

    SI-4102

    Abstract: Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 DSA0038151
    Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested


    Original
    si4102dysi4102dy-t1-e3si4102dy-t1-ge318-jul-08+2si-4102dsa0038151 PDF