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    SI4101DY Search Results

    SI4101DY Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4101DY-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 25.7A 8SOIC Original PDF 10
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    SI4101DY Price and Stock

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    Vishay Siliconix SI4101DY-T1-GE3

    MOSFET P-CH 30V 25.7A 8SO
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    DigiKey () SI4101DY-T1-GE3 Cut Tape 2,536 1
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    SI4101DY-T1-GE3 Digi-Reel 2,536 1
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    SI4101DY-T1-GE3 Reel 2,500 2,500
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    Quest Components () SI4101DY-T1-GE3 70
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    SI4101DY-T1-GE3 70
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    New Advantage Corporation SI4101DY-T1-GE3 42,500 1
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    Vishay Intertechnologies SI4101DY-T1-GE3

    Trans MOSFET P-CH 30V 18A 8-Pin SO T/R - Tape and Reel (Alt: SI4101DY-T1-GE3)
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    Avnet Americas SI4101DY-T1-GE3 Reel 35 Weeks 2,500
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    Mouser Electronics SI4101DY-T1-GE3 79,988
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    Verical () SI4101DY-T1-GE3 5,000 2,500
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    SI4101DY-T1-GE3 300 20
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    Arrow Electronics SI4101DY-T1-GE3 Cut Strips 300 35 Weeks 1
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    Newark SI4101DY-T1-GE3 Reel 2,500
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    TTI SI4101DY-T1-GE3 Reel 2,500 2,500
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    EBV Elektronik SI4101DY-T1-GE3 36 Weeks 2,500
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    Vishay Intertechnologies SI4101DY-T1-GE3 (TRENCHFET)

    Mosfet, P-Ch, 30V, 25.7A, Soic; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Vishay SI4101DY-T1-GE3
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    Newark SI4101DY-T1-GE3 (TRENCHFET) Cut Tape 3,445 5
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    Others SI4101DY

    AVAILABLE EU
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    ComSIT USA SI4101DY 1,875
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    SI4101DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si4101DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si4101DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si4101DY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 • TrenchFET Power MOSFET RDS(on) () Max. ID (A)d 0.0060 at VGS = - 10 V - 25.7 0.0080 at VGS = - 4.5 V - 22.3 Qg (Typ.) • 100 % Rg and UIS Tested


    Original     		Si4101DY Si4101DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si4101DY-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si4101DY-GE3 AN609, 2643m 6512m 8170m 4792m 2540m 1945m 5612m 09-Jan-13 PDF