SI4684DY Search Results
SI4684DY Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| Si4684DY | Vishay Siliconix | N-Channel 30-V (D-S) MOSFET | Original | 198.03KB | 3 | ||
| SI4684DY-RC | Vaishali Semiconductor | R-C Thermal Model Parameters | Original | 196.72KB | 3 | ||
| SI4684DY-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16A 8-SOIC | Original | 7 | |||
| SI4684DY-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16A 8-SOIC | Original | 7 |
SI4684DY Price and Stock
Vishay Siliconix SI4684DYT1E3N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 16A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4684DYT1E3 | 2,500 |
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Get Quote | |||||||
Vishay Intertechnologies SI4684DY-T1-E3Small Signal Field-Effect Transistor, 16A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4684DY-T1-E3 | 645 |
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Get Quote | |||||||
Vishay Intertechnologies SI4684DY-T1-GE3Small Signal Field-Effect Transistor, 16A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4684DY-T1-GE3 | 635 |
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Get Quote | |||||||
SI4684DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Si4684DY-T1-GE3
Abstract: Si4684DY Si4684DY-T1-E3
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si4684dy2002/95/ecsi4684dy-t1-e3si4684dy-t1-ge3+1 | |
SI4684DYContextual Info: SPICE Device Model Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4684dys-50586rev04-apr-05 | |
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Contextual Info: Si4684DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) (Ω) ID (A) 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses |
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si4684dy2002/95/ecsi4684dy-t1-e3si4684dy-t1-ge3+2 | |
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Contextual Info: Si4684DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) (Ω) ID (A) 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses |
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si4684dy2002/95/ecsi4684dy-t1-e3si4684dy-t1-ge3+3 | |
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Contextual Info: Si4684DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) (Ω) ID (A) 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses |
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si4684dy2002/95/ecsi4684dy-t1-e3si4684dy-t1-ge3+1 | |
Si4684DY-T1-E3
Abstract: Si4684DY
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si4684dysi4684dy-t1-e3s-61013-rev12-jun-06 | |
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Contextual Info: Si4684DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ) 14 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET |
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si4684dysi4684dy-t1-e318-jul-08 | |
s61926
Abstract: S-61926 Si4684DY
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si4684dy18-jul-08s61926s-61926 | |
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Contextual Info: Si4684DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ) 14 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET |
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si4684dysi4684dy-t1-e308-apr-05 | |
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Contextual Info: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology |
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si4684dy2002/95/ecsi4684dy-t1-e3si4684dy-t1-ge3+1 | |
c 4161
Abstract: AN609 Si4684DY
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si4684dyan60914-nov-05c 4161 | |
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Contextual Info: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology |
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si4684dy2002/96/ecsi4684dy-t1-e3si4684dy-t1-ge3+1 | |
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Contextual Info: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology |
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si4684dy2002/95/ecsi4684dy-t1-e3si4684dy-t1-ge3+1 | |
SI4684DYContextual Info: Si4684DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 (A)a ID rDS(on) (W) 0.0094 @ VGS = 10 V 16 0.0115 @ VGS = 4.5 V 14 Qg (Typ) 14 nC D Extremely Low Qgd WFETr Technology for Low Switching Losses D TrenchFETr Power MOSFET |
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si4684dysi4684dy--e3si4684dy-t1--e308-apr-05 | |
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kb926
Abstract: kb925 FBMA-L11-201209-221LMA30T compal Compal Electronics foxconn Compal Merom RT8203 mobile 478 SOCKET PIN VSS256
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la-4082pa4082g6179xdr 1+7 | |
JBK00 LA4092P
Abstract: LA-4092P JBK00 KB926 tps51125 JBK00 LA4092P 1.0 FBMA-L11-201209-221LMA30T kb926qf RT8204 LA-4111P
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jbk00la-4092prx781sb700+9 | |
compal
Abstract: Compal Electronics isl6260 PLC1045P MOBILE INTEL CALISTOGA isl6227caz ISL6260CRZ PJP18 PCBGA1466 MC910
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lm393drcompalcompal electronicsisl6260+7 | |
la2841
Abstract: ICS9LP306 compal TPS2231 PLC1045P mini pcie connector 52 pin vertical Socket AM2 Compal Electronics G993 samsung electronics ba41
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ultrasonic sensor 200khz
Abstract: 110 volt output smps design datasheet PCB layout Ultrasonic SWITCH 24v 5a smps computer smps circuit diagram max17031e SMPS CIRCUIT DIAGRAM USING TRANSISTORS T2444-3 irf P-Channel MOSFET audio LDO low drop out
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Abstract: Fast Switching mosfet SI3433B smd diode 615
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KB926
Abstract: JBK00 LA4092P JBK00 LA4092P 1.0 JBK00 LA-4092P PC613 PC614 tps51125 RX781 FBMA-L11-201209-221LMA30T
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jbk00la-4092prx781sb700+8 | |