SI3403DV Search Results

Contextual Info: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio

Contextual Info: Si3403DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY - 20 FEATURES rDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 VDS (V) Qg (Typ) • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio 4.5 nC

74404

Abstract: Si3403DV-T1-E3 SI3403DV
Contextual Info: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio

marking code AE

Contextual Info: Si3403DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY - 20 FEATURES rDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 VDS (V) Qg (Typ) • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio 4.5 nC

74657

Abstract: AN609 613812
Contextual Info: Si3403DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio

74404

Abstract: si3403
Contextual Info: Si3403DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.07 at VGS = - 4.5 V -5 0.105 at VGS = - 2.5 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized, Low Qgd/Qgs Ratio