042009 Search Results

APT42F50B

Abstract: APT42F50S MIC4452 43A 013
Contextual Info: APT42F50B APT42F50S 600V, 43A, 0.13Ω Max trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

8114

Abstract: APT12M80B APT12M80S MIC4452
Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT9M100B

Abstract: APT9M100S MIC4452
Contextual Info: APT9M100B APT9M100S 1000V, 9A, 1.40Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT17F80B

Abstract: APT17F80S MIC4452
Contextual Info: APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET TO -2 POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

APT23F60B

Abstract: APT23F60S MIC4452
Contextual Info: APT23F60B APT23F60S 600V, 24A, 0.29Ω Max, trr ≤220ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT58M80J

Abstract: MIC4452
Contextual Info: APT58M80J 800V, 60A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT4M120K

Abstract: MIC4452
Contextual Info: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

LAN9514

Abstract: usb eeprom programmer schematic "embedded systems" ethernet protocol LAN9514-JZX ethernet hub "4 port" passive hub 100Mbs ethernet lan9514 ethernet usb hub low cost eeprom programmer circuit diagram
Contextual Info: LAN9514/LAN9514i USB 2.0 Hub and 10/100 Ethernet Controller PRODUCT FEATURES Datasheet Highlights „ „ — — — — — — — — — — Fully compliant with IEEE802.3/802.3u Integrated Ethernet MAC and PHY 10BASE-T and 100BASE-TX support Full- and half-duplex support with flow control

Contextual Info: APT8M80K 800V, 8A, 1.35Ω MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT14M120B

Abstract: APT14M120S MIC4452
Contextual Info: APT14M120B APT14M120S 1200V, 14A, 1.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

MOSFET 600v 60a

Abstract: 100V 60A Mosfet APT80M60J MIC4452
Contextual Info: APT80M60J 600V, 84A, 0.055Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT66M60B2

Abstract: APT66M60L MIC4452
Contextual Info: APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT22F120B2

Abstract: APT22F120L MIC4452
Contextual Info: APT22F120B2 APT22F120L 1200V, 23A, 0.70Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT19M120J

Abstract: MIC4452
Contextual Info: APT19M120J 1200V, 19A, 0.53Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT30F60J

Abstract: MIC4452
Contextual Info: APT30F60J 600V, 31A, 0.15Ω Max, trr ≤270ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT7F120B

Abstract: APT7F120S MIC4452 DIODE 240v 3a
Contextual Info: APT7F120B APT7F120S 1200V, 7A, 2.4Ω Max, trr ≤190ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT21M100J

Abstract: MIC4452 NS 301
Contextual Info: APT21M100J 1000V, 21A, 0.38Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT28M120B2

Abstract: APT28M120L MIC4452
Contextual Info: APT28M120B2 APT28M120L 1200V, 29A, 0.53Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT43F60B2

Abstract: APT43F60L MIC4452
Contextual Info: APT43F60B2 APT43F60L 600V, 45A, 0.15Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT56M60B2

Abstract: APT56M60L MIC4452
Contextual Info: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

psdv-0505elf

Abstract: fuse smd H psdv-0512elf smd voltage regulator 8pin dc psdv-0512 PSDV-1205ELF
Contextual Info: PSDV-xxxxELF Mainzer Straße 151–153 D-55299 Nackenheim Tel. +49 6135 7026-0 Fax: +49 6135 931070 www.peak-electronics.de peak@peak-electronics.de PSD-SERIES Rev.04-2009 0.25 Watt Unregulated Single Output SMD Case 1 kV DC I/O Isolation Low Ripple and Noise

LAN9512

Abstract: LAN9512I LAN9512-JZX 93C46 programmer usb VDD18ETHPLL
Contextual Info: LAN9512/LAN9512i USB 2.0 Hub and 10/100 Ethernet Controller PRODUCT FEATURES Datasheet Highlights „ „ — — — — — — — — — — Fully compliant with IEEE802.3/802.3u Integrated Ethernet MAC and PHY 10BASE-T and 100BASE-TX support Full- and half-duplex support with flow control

Contextual Info: APT56F60B2 APT56F60L 600V, 60A, 0.11Ω Max, trr ≤290ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: LAN9512/LAN9512i USB 2.0 Hub and 10/100 Ethernet Controller PRODUCT FEATURES Datasheet Highlights ̈ ̈ — — — — — — — — — — Fully compliant with IEEE802.3/802.3u Integrated Ethernet MAC and PHY 10BASE-T and 100BASE-TX support Full- and half-duplex support with flow control