APT12M80B Search Results
APT12M80B Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| APT12M80B | Microsemi | Power MOSFET; Package: TO-247 [B]; ID (A): 13; RDS(on) (Ohms): 0.8; BVDSS (V): 800; | Original | 117.8KB | 4 |
APT12M80B Price and Stock
Microchip Technology Inc APT12M80BPower MOS 8 MOSFET N-Channel 800V 13A 3-Pin TO-247 - Rail/Tube (Alt: APT12M80B) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT12M80B | Tube | 20 Weeks | 100 |
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APT12M80B | 58 |
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APT12M80B | Bulk | 250 |
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APT12M80B | Tube | 20 Weeks |
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APT12M80B |
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APT12M80B |
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APT12M80B | 5,616 |
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Microsemi Corporation (now Microchip) APT12M80BTrans MOSFET N-CH Si 800V 13A 3-Pin(3+Tab) TO-247 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT12M80B | 26 | 1 |
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Microsemi Corporation APT12M80BPOWER FIELD-EFFECT TRANSISTOR, 13A I(D), 800V, 0.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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APT12M80B | 20 |
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| APT12M80B | 20 |
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APT12M80B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
8114
Abstract: APT12M80B APT12M80S MIC4452
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apt12m80bapt12m80s8114mic4452 | |
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Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
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apt12m80bapt12m80s | |
49e 335
Abstract: 8114 APT12M80B APT12M80S MIC4452 torque
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apt12m80bapt12m80s49e 3358114+2 | |
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Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure |
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apt12m80bapt12m80s | |
SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
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10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7 | |
smps 1000W
Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
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des69110f-asmps 1000w600v 300a igbt dc to dc boost converter+8 | |
SOT-227 lead frame
Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
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mil-prf-19500so-268o-220o-247+12 | |
LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
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le79q22811n6761-12n2369au2n2907aub+6 | |
VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
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ms5-001-14vrf2933flvrf164flarf463ap1+2 | |
fast diode SOT-227
Abstract: N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264
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apt84m50lapt58m50japt100m50japt34f60b+12 |