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APT56M60L Datasheets (1)

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Microsemi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT56M60L		Microsemi	N-Channel MOSFET	Original	PDF	417.64KB	4

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Microchip Technology Inc APT56M60L Trans MOSFET N-CH Si 600V 60A 3-Pin(3+Tab) TO-264 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	APT56M60L					1 - 10 $13.99 100 $11.86 1000 $11.43 10000 $11.43	Buy Now
Avnet Americas	APT56M60L	Tube		20 Weeks	40	1 - 10 - 100 $13.45 1000 $12.44 10000 $12.44	Buy Now
Mouser Electronics	APT56M60L					1 $14.43 10 $14.43 100 $12.46 1000 $12.02 10000 $12.02	Get Quote
Newark	APT56M60L	Bulk			250	1 - 10 - 100 - 1000 $12.02 10000 $12.02	Buy Now
Microchip Technology Inc	APT56M60L	Tube		28 Weeks		1 $14.43 10 $14.43 100 $12.46 1000 $11.43 10000 $11.06	Buy Now

Onlinecomponents.com	APT56M60L					1 - 10 $13.99 100 $11.86 1000 $11.43 10000 $11.43	Buy Now
Microsemi Corporation (now Microchip) APT56M60L Power Field-Effect Transistor, 56A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	APT56M60L		652			1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT56M60L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT56M60B2 Abstract: APT56M60L MIC4452 Contextual Info: APT56M60B2 APT56M60L 600V, 56A, 0.13Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt56m60b2 apt56m60l o-264 o-247 +1mic4452	PDF
APT56M60B2 Abstract: APT56M60L MIC4452 Contextual Info: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt56m60b2 apt56m60l o-264 o-247 +1mic4452	PDF
Contextual Info: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt56m60b2 apt56m60l o-264 o-247	PDF
Contextual Info: APT56M60B2 APT56M60L 600V, 60A, 0.11Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt56m60b2 apt56m60l o-264 o-247	PDF
Contextual Info: APT56M60B2 APT56M60L 600V, 56A, 0.13Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt56m60b2 apt56m60l o-264 o-247	PDF
APT56M60B2 Abstract: APT56M60L MIC4452 403m Contextual Info: APT56M60B2 APT56M60L 600V, 56A, 0.13Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt56m60b2 apt56m60l o-264 o-247 +2mic4452 403m	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	p462-nd p463-nd lng295lfcp2u lng395mftp5u +11us2011 schematic diagram atx power supply 500w pioneer pal 012a 1000w inverter pure sine wave schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 tle 9180 infineon smsc mec 1300 nu tbe schematic diagram inverter 2000w dk55 circuit diagram of luminous 600va ups	PDF
fast diode SOT-227 Abstract: N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264 Contextual Info: TM Power MOS 8 is a new family of high speed, high voltage N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above	Original	apt84m50l apt58m50j apt100m50j apt34f60b +12o-247 o-264 ot-227 fast diode sot-227 n-channel mosfet to-247 fredfets to-264 to247 apt17f120j to-247 apt44f80l to264	PDF