APT66M60L Search Results

APT66M60L Datasheets (1)

Filter by Manufacturer

Microsemi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
APT66M60L		Microsemi	N-Channel MOSFET	Original	PDF	403.28KB	4

APT66M60L Price and Stock

Filter by Manufacturer

Select Manufacturer


Microchip Technology Inc APT66M60L MOSFET MOS 8 600 V 66 A TO-264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	APT66M60L					1 - 10 $15.34 100 $14.01 1000 $13.84 10000 $13.84	Buy Now
Avnet Americas	APT66M60L	Tube		20 Weeks	30	1 - 10 - 100 $16.28 1000 $15.06 10000 $15.06	Buy Now
Newark	APT66M60L	Bulk			250	1 - 10 - 100 - 1000 $14.56 10000 $14.56	Buy Now
Microchip Technology Inc	APT66M60L	Tube		28 Weeks		1 $17.48 10 $17.48 100 $15.10 1000 $13.85 10000 $13.39	Buy Now
Onlinecomponents.com	APT66M60L					1 - 10 $15.34 100 $14.01 1000 $13.84 10000 $13.84	Buy Now
Microsemi Corporation (now Microchip) APT66M60L Power Field-Effect Transistor, 70A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	APT66M60L		452			1 - 10 - 100 - 1000 - 10000 -	Get Quote

APT66M60L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
APT66M60B2 Abstract: APT66M60L MIC4452 Contextual Info: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt66m60b2 apt66m60l o-264 o-247 +1mic4452	PDF
Contextual Info: APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt66m60b2 apt66m60l o-264 sw122 +1o-247	PDF
APT66M60B2 Abstract: APT66M60L MIC4452 Contextual Info: APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt66m60b2 apt66m60l o-264 o-247 +1mic4452	PDF
300V dc dc boost converter Abstract: APT66M60L APT66M60B2 MIC4452 AG245 536E Contextual Info: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt66m60b2 apt66m60l o-264 o-247 +4300v dc dc boost converter mic4452 ag245 536e	PDF
33A250 Contextual Info: APT66M60B2 APT66M60L 600V, 66A, 0.10Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt66m60b2 apt66m60l o-264 o-247 +133a250	PDF
Contextual Info: APT66M60B2 APT66M60L 600V, 70A, 0.09Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure	Original	apt66m60b2 apt66m60l o-264 o-247	PDF
fast diode SOT-227 Abstract: N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264 Contextual Info: TM Power MOS 8 is a new family of high speed, high voltage N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above	Original	apt84m50l apt58m50j apt100m50j apt34f60b +12o-247 o-264 ot-227 fast diode sot-227 n-channel mosfet to-247 fredfets to-264 to247 apt17f120j to-247 apt44f80l to264	PDF