025752FL Search Results

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

am29f010

Contextual Info: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands

AM2BF010

Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
Contextual Info: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption

Contextual Info: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation

Contextual Info: Advanced Micro Devices A m 2 9 F0 1 6 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards

Contextual Info: Advanced Micro Devices A m 2 8F 020 A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current

AM29F040A

Abstract: 17113D-4 AMD date code 29f040 Am29F040
Contextual Info: a Am29F040 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-oniy, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ ■ ■ ■ — Minimizes system level power requirements Compatible with JEDEC-standards

Contextual Info: a PRELIMINARY Advanced Micro Devices AmC004AFLKA 4 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 nA typical standby current

EE-21

Abstract: 28F010P
Contextual Info: a FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 |iA maximum standby current

Contextual Info: ADV MICRO IME MEMORY 57C401/13 57C402/23 D I □2S7S5Û ooa?ast. g 57C4033 I a dvanced Micro Devices Military CMOS Zero Power FIFOs 64x4 64x5 Memory 12 MHz Cascadable Conforms to MIL-STD-883, Class B (Latest Revision) DISTINCTIVE CHARACTERISTICS • Zero standby power

29f200b

Abstract: 0032M AM29 FLASH SO044
Contextual Info: PRELIM INARY Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/I 31,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ ■ ■ ■ ■ — Minimizes system level power requirements

Contextual Info: PRELIMINARY AMD* Am29LV004T/Am29LV004B 4 Megabit 524,288 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • Data Polling and toggle bit DISTINCTIVE CHARACTERISTICS — Detects program and erase cycle completion ■ 2.7 to 3.6 volt, extended voltage range for read

Contextual Info: PRELIMINARY n Am29F080 Advanced Micro Devices 8-Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Embedded Program Algorithms ■ 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements

amd socket 940 pinout

Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
Contextual Info: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: ADV MICRO {MEMORY} Tb D E | 02S7S2Û DDEbSST Am93L469 5 1 2 x9 TTL Low-Power Tag Buffer Am93L469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 45-ns address to comparator output MATCH Replaces six or more integrated circuits with a single device

DG33 transistor

Contextual Info: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time

Contextual Info: ADV MICRO L.4E D MEMORY • 02S7Saa 0Q321D1 ÛÛO ■ PRELIMINARY a Advanced Micro Devices A m 2 7 L V 0 1 0 /A m 2 7 L V 0 1 O B 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V

Contextual Info: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase

Contextual Info: Advanced Micro Devices Am27LV020/Am27LV020B 2 Megabit 262,144 x 8-Bit Low Voltage CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single 3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (battery-operated systems)

29F040

Contextual Info: Am29F040 Advanced Micro Devices 4-Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Com patible with JEDEC-standards

AM27G512-200

Abstract: AM27G
Contextual Info: ADV MI CR O MEMORY 14E D | t - q 0 E S 7 S 2 Û 0 0 2 7 3 ^ 5 fl | u i ' ? , - Q A A m 2 7 C 5 1 2 Adva£ 65,536 x 8-Bit CMOS EPROM Devices D ISTIN CTIVE CH ARACTERISTICS • • • Fast access tim e — 90 ns Low power consumption; - 1 0 0 ¡th maximum standby current

PEB 2261

Abstract: 0034D A03407
Contextual Info: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current

Contextual Info: ADV MICRO MEMORY b4 E D • G2S7SSÖ 0G325QS 3 0 7 ■AM1>4 z \ Advanced Micro Devices Am27X2048 2 Megabit (131,072 x 16-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

Contextual Info: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at